CW Annealing Techniques for Junction Formation in Ge

1981 ◽  
Vol 4 ◽  
Author(s):  
J.P. Lorenzo ◽  
K. J. Soda ◽  
D. Eirug Davies
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Laser Annealing ◽  
Argon Laser ◽  
Antireflective Coating ◽  
Beam Spot ◽  
Spot Diameter ◽  
Junction Formation ◽  
Leakage Characteristics ◽  
Beam Spot Diameter

ABSTRACTCW scanned Argon laser annealing is used to form photo diodes in single crystal Boron implanted germanium. The starting material is doped n–type to 4 × 1015 cm−3 and oriented 2° off the <100>. For annealing, a substrate temperature of 250°C is employed in conjunction with a beam spot diameter of 50 μm and scan speeds in the vicinity of 1 cm/sec. Pyrolytic oxides are deposited to provide a protective and antireflective coating. Devices are fabricated and display dark leakage characteristics of the order of ∼ 10−4 A/cm2 which is comparable to diodes made by more conventional techniques.

scholarly journals Electron-beam writing of photonic crystal patterns using a large beam-spot diameter

2003 ◽  
Vol 14 (9) ◽  
pp. 1004-1008 ◽  
Author(s):  
S Kim ◽  
H Chong ◽  
R M De La Rue ◽  
J H Marsh ◽  
A C Bryce
Keyword(s):  
Electron Beam ◽  
Photonic Crystal ◽  
Beam Spot ◽  
Spot Diameter ◽  
Beam Spot Diameter

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Transient Conductance Measurements During Pulsed Laser Annealing

1981 ◽  
Vol 4 ◽  
Author(s):  
M. O. Thompson ◽  
G. J. Galvin ◽  
J. W. Mayer ◽  
R. B. Hammond ◽  
N. Paulter ◽  
...  
Keyword(s):  
Single Crystal ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
Laser Pulses ◽  
Molten Layer ◽  
Pulsed Laser Annealing ◽  
Complete Melting ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTMeasurements were made of the conductance of single crystal Au-doped Si and silicon-on-sapphire (SOS) during irradiation with 30 nsec ruby laser pulses. After the decay of the photoconductive response, the sample conductance is determined primarily by the thickness and conductivity of the molten layer. For the single crystal Au-doped Si, the solid-liquid interface velocity during recrystallization was determined from the current transient to be 2.5 m/sec for energy densities between 1.9 and 2.6 J/cm2, in close agreement with numerical simulations based on a thermal model of heat flow. SOS samples showed a strongly reduced photoconductive response, allowing the melt front to be observed also. For complete melting of a 0.4 μm Si layer, the regrowth velocity was 2.4 m/sec.

Pulsed Laser Annealing of Aluminum

1980 ◽  
Vol 1 ◽  
Author(s):  
W. R. Wampler ◽  
D. M. Follstaedt ◽  
P. S. Peercy
Keyword(s):  
Single Crystal ◽  
Laser Irradiation ◽  
Reasonable Agreement ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Nucleation Time ◽  
Pulsed Laser Annealing ◽  
Beam Analysis

ABSTRACTPulsed ruby laser irradiation of unimplanted single crystal and implanted polycrystalline Al has been studied with ion beam analysis and TEM. The results show that Al is melted to a depth of ∼ 0.9 μm with a 4.2 J/cm2 , 15 nsec pulse, and that vacancies are quenched into Al during resolidification. Diffusion of Zn in liquid Al is observed, and a melt time of ∼ 65 nsec is estimated for a 3.8 J/cm2, 30 nsec pulse. The observations are in reasonable agreement with calculations of sample temperature and melt times. We observe no precipitation of AlSb in liquid Al for Sbimplanted Al, and conclude that the nucleation time satisfies 50 nsec ≲ tnuc ≲ 200 nsec. We find no evidence for amorphous Al after irradiation of single crystal Al with energies ≳ 1.5 J/cm2.

Sign in / Sign up

Export Citation Format

Share Document