X-Ray Diffraction Analysis of the Strain of SiGeC/(100)Si Alloys

1995 ◽  
Vol 399 ◽  
Author(s):  
A.E. Bair ◽  
T.L. Alford ◽  
S. Sego ◽  
Z. Atzmon ◽  
R.J. Culbertson

ABSTRACTSamples of Si1-x-YGexCy were analyzed with a triple axis high resolution x-ray diffractometer to produce reciprocal space maps. Films with compositions of approximately Si0.77Ge0.20C0.01 vvith thicknesses ranging from 120 nm to 750 nm were found to be pseudomorphic with a tetragonal distortion, εT, near 1%. The tetragonal distortion in pseudomorphic samples with compositions near Si0.47Ge0.50C0.03 with thicknesses ranging from 61 nm to 115 nm was found to be near 2%. The strain increased linearly with Ge concentration even though the Ge:C ratio remained nearly constant. The strain in samples with similar compositions was not a function of thickness. These strain measurements correlated well with results from ion channeling analysis.

2019 ◽  
Vol 2019 (6) ◽  
pp. 875-884 ◽  
Author(s):  
Maxim G. Chegerev ◽  
Alexandr V. Piskunov ◽  
Kseniya V. Tsys ◽  
Andrey G. Starikov ◽  
Klaus Jurkschat ◽  
...  

1996 ◽  
Vol 265 (3-4) ◽  
pp. 233-242 ◽  
Author(s):  
J. Chrosch ◽  
C. Panagopoulos ◽  
N. Athanassopoulou ◽  
J.R. Cooper ◽  
E.K.H. Salje

2009 ◽  
Vol 311 (10) ◽  
pp. 3080-3084 ◽  
Author(s):  
J.Q. Liu ◽  
J.F. Wang ◽  
Y.F. Liu ◽  
K. Huang ◽  
X.J. Hu ◽  
...  

nano Online ◽  
2016 ◽  
Author(s):  
Hryhorii Stanchu ◽  
Vasyl Kladko ◽  
Andrian V Kuchuk ◽  
Nadiia Safriuk ◽  
Alexander Belyaev ◽  
...  

2007 ◽  
Vol 61 (27) ◽  
pp. 4932-4936 ◽  
Author(s):  
G. Ramesh Kumar ◽  
S. Gokul Raj ◽  
Thenneti Raghavalu ◽  
V. Mathivanan ◽  
M. Kovendhan ◽  
...  

2008 ◽  
Vol 64 (a1) ◽  
pp. C106-C106
Author(s):  
R. Guinebretiere ◽  
F. Conchon ◽  
A. Boulle ◽  
C. Girardot ◽  
S. Pignard ◽  
...  

2022 ◽  
Vol 53 ◽  
pp. 1-13
Author(s):  
Craig I. Hiley ◽  
Graeme Hansford ◽  
Nicholas Eastaugh

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