Studies of Ordering in Small Particles

1995 ◽  
Vol 398 ◽  
Author(s):  
U. Herr ◽  
M. Poilack ◽  
D.L. Olynick ◽  
J.M. Gibson ◽  
R.S. Averback
Keyword(s):  
Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Partial Ordering ◽  
Ordered Structure ◽  
Small Particles ◽  
Experimental Conditions ◽  
Au Clusters ◽  
Transmission Electron ◽  
Scanning Transmission

ABSTRACTDisordered clusters of the intermetallic compounds Ni3Al and Cu3Au have been produced using a high pressure sputtering technique. The clusters are either embedded in a film or studied, in-situ in an UHV electron microscope. The evolution of the ordered structure upon annealing is studied. Using a scanning transmission electron microscope, electron diffraction is obtained from individual clusters. Partial ordering is observed in Cu3Au clusters which have been annealed below the bulk order-disorder transition temperature. Under the experimental conditions, only clusters with sizes of 10–15 nm or larger show ordering.

X-ray Energy-Dispersive Spectrometry During In Situ Liquid Cell Studies Using an Analytical Electron Microscope

2014 ◽  
Vol 20 (2) ◽  
pp. 323-329 ◽  
Author(s):  
Nestor J. Zaluzec ◽  
M. Grace Burke ◽  
Sarah J. Haigh ◽  
Matthew A. Kulzick
Keyword(s):  
Electron Microscope ◽  
Analytical Electron Microscopy ◽  
Scanning Transmission Electron Microscope ◽  
Energy Dispersive ◽  
X Ray ◽  
Transmission Electron ◽  
Analytical Electron ◽  
Scanning Transmission ◽  
Liquid Cell

AbstractThe use of analytical spectroscopies during scanning/transmission electron microscope (S/TEM) investigations of micro- and nano-scale structures has become a routine technique in the arsenal of tools available to today’s materials researchers. Essential to implementation and successful application of spectroscopy to characterization is the integration of numerous technologies, which include electron optics, specimen holders, and associated detectors. While this combination has been achieved in many instrument configurations, the integration of X-ray energy-dispersive spectroscopy and in situ liquid environmental cells in the S/TEM has to date been elusive. In this work we present the successful incorporation/modifications to a system that achieves this functionality for analytical electron microscopy.

Dislocation Analysis of 4H-SiC Using KOH Low Temperature Etching

2014 ◽  
Vol 778-780 ◽  
pp. 358-361 ◽  
Author(s):  
Takahiro Sato ◽  
Yuya Suzuki ◽  
Hiroyuki Ito ◽  
Toshiyuki Isshiki ◽  
Munetoshi Fukui
Keyword(s):  
Electron Microscope ◽  
Low Temperature ◽  
Elevated Temperatures ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Etch Pits ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Koh Etching

The conventional KOH etching method at elevated temperatures is an easy way to study SiC dislocations, but presents problems due to an increased etch rate. Here, we examine the application of low temperature KOH treatment for the analysis of dislocation cores and etch pits in SiC. A low energy scanning electron microscope (SEM) is effective to classify dislocation kinds. The scanning transmission electron microscope (STEM) observation of thick samples prepared by the in situ micro-sampling technique enables evaluation of detailed dislocation properties.

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