Laser Induced Nanofabrication on Titanium Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
B.D. Huey ◽  
D.A. Bonnell ◽  
A.D. Akhsakhalian ◽  
A.A. Gorbunov ◽  
A. Sewing ◽  
...  

ABSTRACTIllumination of titanium thin films with an argon-ion laser has been used to fabricate nanometer scale features by localized oxidation. The laser induces a temperature gradient in the metal film, within which oxidation may occur. Due to the non-linearity of the reaction with temperature, the reaction zone can be laterally confined to regions narrower than the diffraction limit of optical resolution. Scanning probe microscopy indicates widths ranging from 105 to 600 nm and heights of 0.8 to 30 nm. The possibility of forming novel structures is demonstrated.

2013 ◽  
Vol 853 ◽  
pp. 619-624
Author(s):  
Natalia Lvova ◽  
K. Kravchuk ◽  
I. Shirokov

The automatic scratch geometrical parameters analysis algorithms based on the images obtained by scanning probe microscopy have been developed. We provide a description of the technique to determine the contact area and the scratch volume with and without account of the pile-ups. The developed algorithms are applied to measure the dynamic hardness by sclerometry on the submicron and nanometer scale.


2015 ◽  
Vol 59 (2) ◽  
pp. 231-236 ◽  
Author(s):  
Jiangjun Li ◽  
Yugang Zou ◽  
Ting Chen ◽  
Jinsong Hu ◽  
Dong Wang ◽  
...  

2015 ◽  
Vol 26 (32) ◽  
pp. 325302 ◽  
Author(s):  
Francesco Lavini ◽  
Nan Yang ◽  
Rama K Vasudevan ◽  
E Strelcov ◽  
S Jesse ◽  
...  

2004 ◽  
Vol 808 ◽  
Author(s):  
Sampath K. Paduru ◽  
Husam H. Abu-safe ◽  
Hameed A. Naseem ◽  
Adnan Al-Shariah ◽  
William D. Brown

ABSTRACTCW Argon-ion laser initiated aluminum induced crystallization (AIC) of RF magnetron sputtered amorphous silicon (a-Si) thin films has been investigated. It was found that lasers could be effectively used to initiate AIC process at very low threshold power densities. An argon-ion laser (λ=514.5 nm) was used to anneal Al/a-Si/glass structures with varying power densities ranging between 55 and 125 W/cm2 and exposure times ranging from 10 to 120 s. X-ray diffraction analysis showed the resulting films to be polycrystalline. The crystallization rate increased both with power density and exposure time. Environmental scanning electron microscopy (ESEM) analysis showed that the surface features change with increasing power density and irradiation time. A dendritic growth pattern was observed in the initial stages of interaction between the films. A strong crystalline Raman peak at around 520 cm-1 was observed in the Raman spectra of the crystallized samples.


1995 ◽  
Vol 8 (4) ◽  
pp. 669-676 ◽  
Author(s):  
LARRY AKIO NAGAHARA ◽  
HIROTAKA OHNO ◽  
HIROSHI TOKUMOTO

Sign in / Sign up

Export Citation Format

Share Document