Optimization and Transformation Analysis of Grain-Boundary-Location-Controlled Si Films

1995 ◽  
Vol 397 ◽  
Author(s):  
H.J. Kim ◽  
James S. Im
Keyword(s):  
Grain Boundary ◽  
Surface Profile ◽  
Solidification Process ◽  
Lateral Growth ◽  
Cross Sectional ◽  
Experimental Parameters ◽  
Positive Volume ◽  
Boundary Location ◽  
Si Films

ABSTRACTBy optimizing various experimental parameters, we were able to extend the width of the microstructually optimized regions in grain-boundary-location-controlled (GLC) Si films up to 10 μm. In situ transient reflectance (TR) measurements during the solidification process reveal that the underlying GLC transformation sequence is consistent with the artificially controlled super-lateral growth (ACSLG) scenario, from which the GLC process was developed and is being optimized. A definite change in the slope of the TR signal was found to appear at the transition between the vertical-and-lateral -growth and lateral-growth-only modes. Protrusions at the center of the GLC Si microstructure, which are observed in cross-sectional TEM micrographs and surface profile measurements, are formed as a result of the positive volume change associated with freezing of Si.

The Effect of Grain Boundaries on Surface Diffusion Mediated-Planarization of Polycrystalline Cu Films

1995 ◽  
Vol 389 ◽  
Author(s):  
R.A. Brain ◽  
D.S. Gardner ◽  
D.B. Fraser ◽  
H.A. Atwater
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Surface Diffusion ◽  
Cross Sections ◽  
Boundary Surface ◽  
Surface Profile ◽  
Transmission Electron Micrograph ◽  
Cu Films ◽  
Transmission Electron

ABSTRACTIn situ, ultrahigh vacuum anneals were performed to induce Cu reflow at 500°C following deposition of Cu films and a Ta barrier layer on 1 μm wide by 1 μm deep trenches. Transmission electron micrograph cross-sections show profiles which suggest that grain boundaries and surface energy anisotropy significantly affect reflow. The extent of reflow is dependent on the structure of grain boundary-surface intersections, and the surface profile consists of regions of low curvature within grains and with sharp discontinuities in curvature at grain boundaries, a structure that inhibits surface diffusion. We present results showing how the surface diffusion mediated reflow varies with grain boundary groove angle and position, and compare these results with finite-element simulations that model surface diffusion-driven reflow.

Grain Boundary Location-Controlled Polt-Si Films for Tft Devices Obtained Via Novel Excimer Laser Process

1994 ◽  
Vol 358 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Grain Boundary ◽  
Excimer Laser ◽  
Crystallization Process ◽  
Critical Distance ◽  
Capping Layer ◽  
Complete Melting ◽  
Boundary Location ◽  
Si Films ◽  
Active Channel ◽  
Induced Crystallization

ABSTRACTBased on a previously acquired physical understanding of the excimer-laser-induced crystallization process, we have developed a new crystallization technique that produces controlled microstructures and possesses a wide processing window. A patterned oxide capping layer was used as an antireflective coating to induce complete melting of an Si film under an SiO2 pattern, and partial melting of the Si film in the areas not under the capping layer—allowing controlled super lateral growth to proceed from the incompletely melted portion of the film to the completely melted portion. For the simple stripes used in this investigation, when the width of the completely molten region is less than a critical distance (above which nucleation of solids occurs in the middle of the completely melted regions), the resulting microstructure has large and elongated grains with one precisely located grain boundary running parallel to the stripe In the middle of the oxide capped region.Arrangement of TFT devices on the resulting Grain boundary Location-Controlled (GLC) Si films with one (or zero) grain boundaries located perpendicular to the flow of electrons within the active channel portion of the TFT devices is illustrated. Such devices are expected to possess performance and uniformity characteristics that are superior to currently available poly-Si TFT devices.

In situ Chemical Vapor Deposition of Silicon

1974 ◽  
Vol 32 ◽  
pp. 488-489
Author(s):  
J. L. Kenty
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Metal Films ◽  
Cross Sectional ◽  
Environmental Cell ◽  
Si Films ◽  
A Current

An AEI EM6 electron microscope was modified for the in situ chemical vapor deposition (CVD) of Si films by pyrolysis of SiH4 gas. The environmental cell was so constructed that 100 μm dia. apertures placed 1.6 mm apart formed the top and bottom of the CVD microchamber and permitted a gas flow of up to 0.4 cm3 (STP)/min at up to 10 torr. A current of 2 amps through a single 200 mesh Ti grid of 0.003 mm2 net cross sectional area is sufficient to heat the sample to ~1200°C. Some temperature-heater power calibration experiments were performed by observing the melting point of evaporated metal films.

Comparison of SiH4 and Si2H6 RTCVD Kinetics using in-situ Spectroscopic Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
Y. Z. Hu ◽  
S. P. Tay ◽  
Y. Wasserman ◽  
C. Y. Zhao ◽  
E. A. Irene
Keyword(s):  
Real Time ◽  
Incubation Time ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Si Films

ABSTRACTA comparison of SiH4 and Si2H6 chemical vapor deposition kinetics was performed in a rapid thermal processing (RTP) system at temperatures between 600 and 800 °C and reactant gas pressures between 1 and 25 mTorr. Quantitative assessment of the nucleation parameters and the microstructures of the deposited polycrystalline Si (poly-Si) films on SiO2 have been determined using in situ real time single wavelength and spectroscopie ellipsometry. In addition to ellipsometry, atomic force microscopy and cross-sectional transmission electron microscopy were used ex situ to observe the nucleation stage and the microstructures of the poly-Si films. In the present study we compare the nucleation, poly-Si film microstructure and surface roughness using SiH4 and Si2H6 in the RTP system and show that under the same processing conditions the saturation nuclei density (1010 cm−2) for Si2H6 is about 6 times higher than that for SiH4 and the poly-Si films from Si2H6 are smoother and have better columnar structure than those from SiH4.A particularly important parameter for selective epitaxial depositions is the time for nuclei to form, i.e. the incubation time. An operational incubation time were determined from the real time ellipsometric measurements and confirmed by AFM. The incubation times for using SiH4 and Si2H6 are different, but they show similar activation energies of about Einc = 1 eV in the 600–800 °C range. A formula of incubation time tinc was obtained and expressed.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

In situ observation of multiple parallel (1 1 1) twin boundary formation from step-like grain boundary during Si solidification

2020 ◽  
Vol 13 (10) ◽  
pp. 105501
Author(s):  
Kuan-Kan Hu ◽  
Kensaku Maeda ◽  
Keiji Shiga ◽  
Haruhiko Morito ◽  
Kozo Fujiwara
Keyword(s):  
Grain Boundary ◽  
Twin Boundary ◽  
In Situ Observation ◽  
Boundary Formation

scholarly journals Time-Response-Histogram-Based Feature of Magnetic Barkhausen Noise for Material Characterization Considering Influences of Grain and Grain Boundary under In Situ Tensile Test

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2350
Author(s):  
Jia Liu ◽  
Guiyun Tian ◽  
Bin Gao ◽  
Kun Zeng ◽  
Yongbing Xu ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Tensile Stress ◽  
Material Properties ◽  
Ferromagnetic Material ◽  
Silicon Steel ◽  
Time Response ◽  
Barkhausen Noise ◽  
Time Interval ◽  
Magnetic Barkhausen Noise

Stress is the crucial factor of ferromagnetic material failure origin. However, the nondestructive test methods to analyze the ferromagnetic material properties’ inhomogeneity on the microscopic scale with stress have not been obtained so far. In this study, magnetic Barkhausen noise (MBN) signals on different silicon steel sheet locations under in situ tensile tests were detected by a high-spatial-resolution magnetic probe. The domain-wall (DW) motion, grain, and grain boundary were detected using a magneto-optical Kerr (MOKE) image. The time characteristic of DW motion and MBN signals on different locations was varied during elastic deformation. Therefore, a time-response histogram is proposed in this work to show different DW motions inside the grain and around the grain boundary under low tensile stress. In order to separate the variation of magnetic properties affected by the grain and grain boundary under low tensile stress corresponding to MBN excitation, time-division was carried out to extract the root-mean-square (RMS), mean, and peak in the optimized time interval. The time-response histogram of MBN evaluated the silicon steel sheet’s inhomogeneous material properties, and provided a theoretical and experimental reference for ferromagnetic material properties under stress.

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