Dose and Doping Dependence of Damage Annealing in Fe Mev Implanted Inp

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Carnera ◽  
B. Fraboni ◽  
A. Gasparotto ◽  
F. Priolo ◽  
A. Camporese ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Defect Structure ◽  
Damage Evolution ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
Primary Defect ◽  
Secondary Damage ◽  
Transmission Electron ◽  
Secondary Ions

AbstractHigh energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5×l013 and 5×l014 at/cm2. Annealing in the 650–800 °C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analysed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

Structural and Chemical Properties of MBE Grown Niobium Overlayers on (110) Rutile

1996 ◽  
Vol 441 ◽  
Author(s):  
J. Marien ◽  
T. Wagner ◽  
M. Rühle
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Chemical Properties ◽  
High Energy ◽  
Initial Growth ◽  
High Energy Electron ◽  
Transmission Electron ◽  
Different Temperatures ◽  
And Chemical Properties

AbstractThin Nb films were grown by MBE in a UHV chamber at two different temperatures (50°C and 950°C) on the (110) surface of TiO2 (rutile).At a growth temperature of 50°C, reflection high energy electron diffraction (RHEED) revealed epitaxial growth of Nb on rutile: (110)[001] TiO2 ¦¦ (100)[001] Nb. In addition, investigations with Auger electron spectroscopy (AES) revealed that a chemical reaction took place between the Nb overlayer and the TiO2 substrate at the initial growth stage. A 2 nm thick reaction layer at the Nb/TiO2 interface has been identified by means of conventional transmission electron microscopy (CTEM) and high-resolution transmission electron microscopy (HRTEM).At a substrate temperature of 950°C, during growth, the Nb film was oxidized completely, and NbO2 grew epitaxially on TiO2. The structure and the chemical composition of the overlayers have been investigated by RHEED, AES, CTEM and HRTEM. Furthermore, it was determined that the reaction of Nb with TiO2 is governed by the defect structure of the TiO2 and the relative oxygen affinities of Nb and TiO2.

Room Temperature Damage, Annealing and Dislocation Growth in Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
R.G. Elliman ◽  
I.V. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Primary Defect ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Sensitive Function ◽  
Temperature Damage

AbstractThe concentration of residual defects produced by self ion implantation of silicon has been shown to be a sensitive function of implantation temperature at temperatures near room temperature. In this study samples were heated to temperatures of 20°C and 60°C and implanted with 540 keV Si ions to a fluence of 2x1015Si.cm-2 using a constant scanned ion flux of 0.2 μA.cm-2. The resultant primary defect concentrations, measured by Rutherford backscattering spectrometry and channelling (RBS-C), were 2.3±0.1x1022 cm-l and 1.8±0.2x1021 cm-3, respectively, i.e. a reduction by a factor of σ13 for a temperature increase of 40°C. Such differences were not evident in the concentration of secondary defects formed by annealing these samples at 900°C for 15 minutes: the defect concentrations were equal within the experimental uncertainties of the RBS-C and transmission electron microscopy (TEM) measurements. This result appears to lead to the surprising conclusion that the number of displaced atoms that survive high temperature annealing to form extended defects is largely independent of the dynamic annealing processes operating during implantation but depends instead on parameters which scale with the ion fluence.

scholarly journals Contributions of Electron Microscopy to the Understanding of Reactions on Compound Semiconductor Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Compound Semiconductor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Glancing Angle ◽  
Semiconductor Substrates ◽  
The Relationship ◽  
Minimum Quality

ABSTRACTReacted films on compound semiconductor substrates present challenging materials characterization problems which often require the application of transmission electron microscopy (TEM) techniques. In this paper, both the problem - solving potential of the TEM techniques and the limits imposed by preparation of thin film/compound semiconductor TEM specimens are discussed. Studies of the Ni/GaAs, CuCl(aq)/CdS and Pd/GaAs reactions exemplify the role of TEM in identifying and determining the spatial distribution of interface - stabilized polymorphs and new ternary phases (e.g. tetragonal Cu2S, Ni3GaAs and PdxGaAs). These examples also serve to clarify the relationship between TEM and complementary analysis techniques such as Rutherford backscattering spectrometry, Auger electron spectroscopy and glancing-angle x-ray diffraction. In particular, it is argued that a combination of (1) high-spatial-resolution information obtained by TEM and (2) an indication of the “average” behavior provided by data from a complementary characterization technique provide the minimum quality and quantity of data necessary to understand most reactions on compound semiconductor substrates.

scholarly journals Evolution of SiOx Shell Layers on SiC-SiOx Core-Shell Nanowires

2020 ◽  
Vol 1004 ◽  
pp. 479-489
Author(s):  
Andrea Broggi ◽  
Eli Ringdalen ◽  
Merete Tangstad
Keyword(s):  
Electron Microscopy ◽  
Elevated Temperatures ◽  
High Energy ◽  
Crystal Defects ◽  
Core Shell ◽  
Sic Nanowires ◽  
Transmission Electron ◽  
Core Phase ◽  
Crystallographic Defects

Composite core-shell SiC-SiOx nanowires can be produced by heating quartz and SiC powders, with addition of Ar(g) or He(g). The two powders are mixed to create pellets, which will react to SiO(g) and CO(g) at elevated temperatures. The two gases will react on a colder surface, producing a web of SiC-SiOx nanowires. The product serves as a precursor for SiC nanowires production. During the process, silicon and oxygen accumulate at high energy points, forming SiOx nodules. Nodules can either generate in proximity of stacking faults, or where two or more nanowires are close to each other. The present work investigates the role of crystal defects in the wettability between silica and silicon carbide. Samples were collected and analyzed under Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). The results show that β-SiC grows mainly in the [111] direction. Crystal defects are located in the SiC core-phase. SiOx initially develops a uniform layer as thick as the core-phase itself. SiOx nodules would first form where the defects are present, by accumulating at high energy sites. Droplets on a flat surface imply poor wettability. The mechanism of formation of the nodules is compared to two earlier proposed theories. In conclusion, the wettability of SiOx and SiC at nanoscale is controlled by the presence of crystallographic defects. Continuous SiOx layers and bead-like structures can be found in the same temperature interval. The microstructural changes depend on the local energy balance.

On Future Directions in Pathology

1982 ◽  
Vol 40 ◽  
pp. 274-277
Author(s):  
Benjamin F. Trump ◽  
Irene K. Berezesky ◽  
Raymond T. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Clinical Pathology ◽  
Future Directions ◽  
Diagnostic Pathology ◽  
The Past ◽  
Transmission Electron ◽  
Organ Systems ◽  
The Many

The role of electron microscopy and associated techniques is assured in diagnostic pathology. At the present time, most of the progress has been made on tissues examined by transmission electron microscopy (TEM) and correlated with light microscopy (LM) and by cytochemistry using both plastic and paraffin-embedded materials. As mentioned elsewhere in this symposium, this has revolutionized many fields of pathology including diagnostic, anatomic and clinical pathology. It began with the kidney; however, it has now been extended to most other organ systems and to tumor diagnosis in general. The results of the past few years tend to indicate the future directions and needs of this expanding field. Now, in addition to routine EM, pathologists have access to the many newly developed methods and instruments mentioned below which should aid considerably not only in diagnostic pathology but in investigative pathology as well.

Effects of High-Energy Ions on Synthetic Quartz

1972 ◽  
Vol 30 ◽  
pp. 544-545
Author(s):  
Joseph J. Comer ◽  
Charles Bergeron ◽  
Lester F. Lowe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
High Energy ◽  
Transmission Electron ◽  
Kikuchi Lines ◽  
High Energy Ions ◽  
Diffraction Patterns ◽  
Dauphiné Twinning ◽  
Beam Damage

Using a Van De Graaff Accelerator thinned specimens were subjected to bombardment by 3 MeV N+ ions to fluences ranging from 4x1013 to 2x1016 ions/cm2. They were then examined by transmission electron microscopy and reflection electron diffraction using a 100 KV electron beam.At the lowest fluence of 4x1013 ions/cm2 diffraction patterns of the specimens contained Kikuchi lines which appeared somewhat broader and more diffuse than those obtained on unirradiated material. No damage could be detected by transmission electron microscopy in unannealed specimens. However, Dauphiné twinning was particularly pronounced after heating to 665°C for one hour and cooling to room temperature. The twins, seen in Fig. 1, were often less than .25 μm in size, smaller than those formed in unirradiated material and present in greater number. The results are in agreement with earlier observations on the effect of electron beam damage on Dauphiné twinning.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Fine structure and possible functions of the hermaphrodite duct of some pulmonate snails (Mollusca: Gastropoda)

1990 ◽  
Vol 48 (3) ◽  
pp. 68-69
Author(s):  
Alan N. Hodgson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Fine Structure ◽  
Seminal Vesicle ◽  
Reproductive Biology ◽  
Light Microscope ◽  
Light Microscope Level ◽  
Transmission Electron ◽  
Standard Techniques

The hermaphrodite duct of pulmonate snails connects the ovotestis to the fertilization pouch. The duct is typically divided into three zones; aproximal duct which leaves the ovotestis, the middle duct (seminal vesicle) and the distal ovotestis duct. The seminal vesicle forms the major portion of the duct and is thought to store sperm prior to copulation. In addition the duct may also play a role in sperm maturation and degredation. Although the structure of the seminal vesicle has been described for a number of snails at the light microscope level there appear to be only two descriptions of the ultrastructure of this tissue. Clearly if the role of the hermaphrodite duct in the reproductive biology of pulmonatesis to be understood, knowledge of its fine structure is required.Hermaphrodite ducts, both containing and lacking sperm, of species of the terrestrial pulmonate genera Sphincterochila, Levantina, and Helix and the marine pulmonate genus Siphonaria were prepared for transmission electron microscopy by standard techniques.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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