Formation of Buried Two-Dimensional Electron Gas in Gaas by Si Ion Doping Using Mbe-Fib Combined System

1995 ◽  
Vol 396 ◽  
Author(s):  
J. YANAGISAWA ◽  
H. Nakayama ◽  
F. Wakaya ◽  
Y. Yuba ◽  
K. Gamo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Focused Ion Beams ◽  
Dimensional Electron ◽  
Combined System ◽  
Two Dimensional Electron Gas ◽  
Post Annealing ◽  
Ion Doping ◽  
Dimensional Electron Gas ◽  
Selective Formation

Abstract0.1 and 30 keV Si2+ focused ion beams (FIB) were implanted in two types of GaAs, one of which is semi-insulating (s.i.) GaAs, while the other is grown by molecular beam epitaxy (MBE). Successive regrowth over the implanted surface was performed using MBE-FIB combined system, and the resistance was measured. It was found that for 100 eV Si2+ FIB implantation, the sample was nonconductive without a post annealing at 800°C. After the post annealing, however, the sample became conductive, and the resistance was the same order in magnitude as the sample fabricated using 30 keV Si + FIB irradiation. This suggests a potential of selective formation of Si δ-like doped layers in GaAs and GaAs/AlGaAs using a low-energy FIB.

Doping Study of Se into AlGaAs Layers Grown by MBE, and their Application to HEMT Structures

1988 ◽  
Vol 144 ◽  
Author(s):  
T. Maed ◽  
T. Ishikawa ◽  
K. Kondo
Keyword(s):  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Si Doping ◽  
Se Doping ◽  
Si Doped ◽  
Dx Center ◽  
Dimensional Electron Gas ◽  
Dopant Source

ABSTRACTWe studied doping Se into AlGaAs layers using PbSe as a dopant source for molecular beam epitaxy (MBE). Good controllability and abruptness equivalent to that of Si-doping were obtained. Se-doping was successfully applied to HEMT structures with reduced DX center concentrations. The two dimensional electron gas (2DEG) characteristics of these structures were comparable to those of Si-doped structures.

scholarly journals Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Li Meng ◽  
Jingwen Zhang ◽  
Qun Li ◽  
Xun Hou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Gas ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Laser Molecular Beam Epitaxy ◽  
A Value ◽  
Dimensional Electron Gas ◽  
High Hall Mobility ◽  
Sheet Density

A Zn polar ZnMgO/MgO/ZnO structure with low Mg compositionZn1-xMgxOlayer (x= 0.05) grown on a-plane (11–20) sapphire by radical-source laser molecular beam epitaxy was reported. The insertion of a thin (1 nm) MgO layer between ZnMgO and ZnO layers in the ZnMgO/ZnO 2DEG structures results in an increase of 2DEG sheet density and affects electron mobility slightly. The carrier concentration reached a value as high as 1.1 × 1013 cm−2, which was confirmed byC-Vmeasurements. A high Hall mobility of 3090 cm2/Vs at 10 K and 332 cm2/Vs at RT was observed from Zn0.95Mg0.05O/MgO/ZnO heterostructure. The choice of the thickness of MgO was discussed. The dependence of carrier sheet density of 2DEG on ZnMgO layer thickness was calculated in theory and the theoretical prediction and experimental results agreed well.

scholarly journals High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 5 (9) ◽  
pp. 1800844 ◽  
Author(s):  
Tao Wang ◽  
Xinqiang Wang ◽  
Zhaoying Chen ◽  
Xiaoxiao Sun ◽  
Ping Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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