Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)]

2002 ◽  
Vol 91 (7) ◽  
pp. 4780-4780 ◽  
Author(s):  
I. P. Smorchkova ◽  
L. Chen ◽  
T. Mates ◽  
L. Shen ◽  
S. Heikman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy

2018 ◽  
Vol 5 (9) ◽  
pp. 1800844 ◽  
Author(s):  
Tao Wang ◽  
Xinqiang Wang ◽  
Zhaoying Chen ◽  
Xiaoxiao Sun ◽  
Ping Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electron Gas ◽  
High Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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