Low-Temperature (< 100°C) Growth of Ain by Ion Beam Assisted Deposition+

1995 ◽  
Vol 396 ◽  
Author(s):  
H. Karimy ◽  
E. Tobin ◽  
R. Bricault ◽  
A. Cremins-Costa ◽  
P. Colter ◽  
...  
Keyword(s):  
High Temperature ◽  
Crystal Size ◽  
Ion Beam ◽  
Physical And Mechanical Properties ◽  
Dark Field ◽  
Cross Sectional ◽  
Plan View ◽  
The Past ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron

AbstractDuring the past few years, there has been growing interest in aluminum nitride (A1N) thin films because of their excellent optical, electrical, chemical, mechanical and high-temperature properties. Ion beam assisted deposition (IBAD) was used to deposit A1N films on flat and curved substrates, including Si, SIMOX, sapphire, quartz, aluminum, stainless steel, and carbon, at temperatures substantially below 100°C. The objective was to enhance the physical and mechanical properties of A1N film by controlling the crystal size and structures.Experimental results, as obtained by Rutherford backscattering spectroscopy (RBS) show the formation of stoichiometric A1N. Plan-view/cross-sectional transmission electron microscopy (TEM), clearly demonstrated the formation of a smooth, uniform A1N film. Electron diffraction and dark field TEM studies clearly show the growth of A1N crystallites with cubic and/or hexagonal structures and dimensions of 30 to 100A. The films are transparent and have good adhesion to all substrates. In addition to excellent high temperature (up to 1050°C measured) and chemical stability (shown through a variety of acid tests), these films have demonstrated extreme hardness, greater than two times that of bulk AIN.

Orientational and Microstructural Evolution During Epitaxial Growth of Cu on Si(001) by Sputter Deposition

1992 ◽  
Vol 280 ◽  
Author(s):  
I. Hashim ◽  
B. Park ◽  
H. A. Atwater
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
High Energy ◽  
Sputter Deposition ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTEpitaxial Cu thin films have been grown on H-terminated Si(OOl) substrates at room temperature by D.C. ion-beam sputter deposition in ultrahigh vacuum. The development of orientation and microstructure during epitaxial growth from the initial stages of Cu growth up to Cu thicknesses of few hundred nm has been investigated. Analysis by in-situ reflection high energy electron diffraction, thin film x-ray diffraction, and plan-view and cross-sectional transmission electron microscopy indicates that the films are well textured with Cu(001)∥ Si(001) and Cu[100]∥ Si[110]. Interestingly, it is found that a distribution of orientations occurs at the early stages of Cu epitaxy on Si(001) surface, and that a (001) texture emerges gradually with increasing Cu thickness. The effect of silicide formation and deposition conditions on the crystalline quality of Cu epitaxy is also discussed.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

Influence of Rapid Thermal Annealing on Shallow BF2 Implantation into Pre-Amorphized Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
W. Maszara ◽  
C. Carter ◽  
D. K. Sadana ◽  
J. Liu ◽  
V. Ozguz ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ion Beam ◽  
Liquid Nitrogen Temperature ◽  
Structural Defects ◽  
Structural Quality ◽  
Halogen Lamp ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron

ABSTRACTLow energy, shallow BF2+ implants were carried out at room or liquid nitrogen temperature into deep pre-amorphized (100) Si for better control of the dopant profile and post-annealing structural defects. Cross sectional and angle polished plan view transmission electron microscopy were used to study the structural quality of the implanted layer, while SIMS provided a chemical profile. Four types of structural defects were observed in BF2+ implanted, pre-amorphized samples following rapid thermal annealing with a halogen lamp. An in-situ ion beam annealing and the presence of F in the Si lattice were related to the creation of the defects. Good correlations between F gettering and TEM observed defects were found to exist. Implantation of B+ into a pre-amorphized Si surface and subsequent rapid thermal annealing was found to produce a wide defect-free surface layer.

Preparation of Cross Sectional and Plan View TEM Samples of Thin Films on Mgo Substrates with an Additional Chemical Thinning Step

1990 ◽  
Vol 199 ◽  
Author(s):  
Shang. H. Rou ◽  
Philip. D. Hren ◽  
Angus. I. Kingon
Keyword(s):  
Thin Films ◽  
Orthophosphoric Acid ◽  
Ion Beam ◽  
Ion Milling ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Sample Preparation Procedure ◽  
Common Substrate ◽  
Beam Damage

ABSTRACTSingle crystal MgO is a common substrate for the deposition of oxide thin films. The conventional cross sectional transmission electron microscopy sample preparation procedure suffers the drawbacks of: 1)- extensive ion milling time; 2) a higher milling rate for the thin films than for the substrate; 3) introduction of artifacts and contamination during ion milling; and 4) generation of excess defects into the substrate during mechanical thinning. An additional chemical thinning step using hot orthophosphoric acid can reduce or eliminate these adverse effects.This technique can be applied generally to thin film samples deposited on substrates with a low ion milling rate. Furthermore, substrates which are sensitive to mechanical stress and ion beam damage are also suitable for this technique, provided an appropriate chemical polishing solution and compatible epoxy can be found. The unique features of this technique are briefly presented.

Effect of Substrate Materials on Mechanical Properties and Microstructure of Carbon Nitride Films Prepared by Ion-beam-assisted deposition

2000 ◽  
Vol 647 ◽  
Author(s):  
Hidenobu Ohta ◽  
Akihito Matsumuro ◽  
Yutaka Takahashi
Keyword(s):  
Mechanical Properties ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Pure Titanium ◽  
Carbon Layer ◽  
Bearing Steel ◽  
Cross Sectional ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Aluminum Alloy 7075

AbstractCarbon nitride (C-N) thin films were prepared on several substrates by ion-beam-assisted deposition technique. In this experiment, carbon was evaporated by electron beam. Nitrogen and argon ion beams were bombarded simultaneously. Aluminum alloy (7075), high-carbon chrome bearing steel (SUJ2), pure titanium plates (99.5%) and Si(100) wafer were used as substrates. Here, mechanical properties, such as hardness, adhesion, friction coefficient and wear resistance were investigated. These results show the adhesion between the films and substrates were improved by formation of the carbon layer. The microstructure of the carbon nitride films were investigated by cross sectional high-resolution transmission electron microscopy (HRTEM).

Transmission electron microscopy study of (103)-oriented epitaxial SrBi2Nb2O9 films grown on (111) SrTiO3 and (111) SrRuO3/(111) SrTiO3

2001 ◽  
Vol 16 (2) ◽  
pp. 489-502 ◽  
Author(s):  
M. A. Zurbuchen ◽  
J. Lettieri ◽  
Y. Jia ◽  
D. G. Schlom ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Microscopy Study ◽  
Dark Field ◽  
Electron Microscopy Study ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Second Phases

Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we recently reported the highest remanent polarization (Pr) ever achieved in SrBi2Nb2O9 (or SrBi2Ta2O9) films, i.e., Pr = 15.7 μC/cm2, have been characterized microstructurally by plan-view and cross-sectional transmission electron microscopy (TEM) along three orthogonal viewing directions. SrBi2Nb2O9 grows with its c axis tilted 57° from the substrate surface normal in a three-fold twin structure about the substrate [111], with the growth twins' c axes nominally aligned with the three 〈100〉 SrTiO3 directions. (103) SrBi2Nb2O9 films with and without an underlying epitaxial SrRuO3 bottom electrode have been studied. Dark-field TEM imaging over a 12 μm2 area shows no evidence of second phases (crystalline or amorphous). A high density of out-of-phase boundaries exists in the films.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

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