Gas Phase Adduct Reactions in MOCVD Growth of GaN
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ABSTRACTGas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.
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2012 ◽
Vol 1
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pp. P46-P53
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2005 ◽
Vol 16
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pp. 1904-1904
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2001 ◽
Vol 36
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pp. 589-604
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2005 ◽
Vol 16
(8)
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pp. 1291-1304
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1981 ◽
Vol 16
(8)
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pp. 344-346
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2018 ◽
Vol 24
(47)
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pp. 12354-12358
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