Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications

1995 ◽  
Vol 395 ◽  
Author(s):  
K. Doverspike ◽  
A.E. Wickenden ◽  
S.C. Binari ◽  
D.K. Gaskill ◽  
J.A. Freitas
Keyword(s):  
Operating Temperature ◽  
High Mobility ◽  
Growth Characteristics ◽  
Device Structure ◽  
High Quality ◽  
Capping Layer ◽  
Channel Layer ◽  
Si Doped ◽  
Silicon Doped ◽  
Recessed Gate

ABSTRACTWe have shown the ability to grow thin, high mobility, GaN channel layers on high quality, highly resistive GaN. The growth, characteristics, and device results of two types of MESFET structures were discussed. The first device structure consists of a 2000Ǻ, 2 × 1017cm−3 Si-doped channel layer, grown on 3µm of highly resistive GaN, while die second structure (recessed-gate MESFET) had a 1000Ǻ, 1 × 1018cm−3 Si-doped, n+ capping layer deposited on a 2000Ǻ, 2 × 1017cm−3 Si-doped channel layer. The first MESFET structure was operational at 500°C which is the highest reported operating temperature for a GaN device while the recessed-gate MESFET had a gmas high as 41mS/mm, which is the highest reported value for a GaN MESFET.

Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template

2003 ◽  
Vol 764 ◽  
Author(s):  
C. B. Soh ◽  
J. Zhang ◽  
D.Z. Chi ◽  
S. J. Chua
Keyword(s):  
Plasma Etching ◽  
Edge Dislocation ◽  
Deep Level ◽  
Device Fabrication ◽  
Trap Level ◽  
Device Structure ◽  
High Quality ◽  
Si Doped ◽  
Additional Defect ◽  
Trap Levels

AbstractIn this paper, deep level defects in high quality continuous GaN films grown over a cracked Si-doped GaN template has been studied using digital deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). From TEM observation, it is found that the density of pure screw dislocations have been effectively suppressed while pure edge dislocations remained in substantial quantity. From DLTS measurement, trap levels at Ec -ET ∼ 0.11-0.12 eV, 0.24-0.27 eV, 0.60-0.63 eV were detected in the high quality GaN layer. DLTS measurement was also carried out on the underlying cracked Si-doped GaN template after the top high quality continuous GaN film was removed by plasma etching. An additional defect level at Ec-Et ∼ 0.37 eV was detected which we attributed to defect decoration at screw dislocation. Both the trap levels Ec-ET ∼ 0.24–0.27 eV, 0.60-0.63 eV are believed to originate from mixed screw/edge dislocation based on observation of the logarithmic capture behavior. Trap level at Ec -ET ∼ 0.24-0.27eV, however, experiences a more drastic increase in transient capacitance (i.e. in trap concentration) compared to that of Ec -ET ∼ 0.60-0.63 eV after plasma etching, illustrating that the latter is related to a higher proportion of edge dislocation. The 0.11-0.12 eV trap level, which exhibits an exponential capture kinetic, is believed to be related to nitrogen vacancies. This high quality continuous GaN layer can be used as a template to grow any device structure and the underneath cracked Si-doped GaN layer may help to release stress for the top continuous GaN layer. This can bring about a cracked free epilayer for subsequent device fabrication.

The invisible BNR plant provides high quality effluent and recreational area for densely populated urban area

2009 ◽  
Vol 4 (1) ◽  
Author(s):  
E. Choi ◽  
Z. Yun ◽  
K.S. Min
Keyword(s):  
Nutrient Removal ◽  
Operating Temperature ◽  
Treatment Plant ◽  
Ground Level ◽  
Biological Nutrient Removal ◽  
High Quality ◽  
Sand Filter ◽  
Sport Facilities ◽  
Final Effluent ◽  
Removal System

In a densely populated area, a large wastewater treatment plant (WWTP) has been constructed in the underground. The plant is practically “invisible” to visitors and neighbours, and the ground level is used as a park and sport facilities in order to avoid the “not in my backyard” phenomenon. The WWTP has a 5-stage biological nutrient removal system utilizing the denitrifying PAO (dPAO) with a step feed in order to treat the weak sewage with higher nutrient removal requirement. Although the underground installation could be expected to increase plant operating temperature, the temperature increase was only 1°C. The polished final effluent from a sand filter produced average TN and TP concentrations of 5.11 mg/L and 0.91 mg/L, respectively with SS concentrations of 0.61 mg/L, indicating that the dPAO system combined with sand filter effectively produced a high quality effluent.

Thick Si-doped DLC coatings with high load bearing capacity on cold working tool steels by PECVD

2021 ◽  
pp. 1-19
Author(s):  
Xinyu Wang ◽  
Xudong Sui ◽  
Shuaituo Zhang ◽  
Mingming Yan ◽  
Yan Lu ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Cold Working ◽  
Chemical Vapor ◽  
Tool Steels ◽  
Dlc Coatings ◽  
Wear Rates ◽  
Si Doped ◽  
Silicon Doped ◽  
Hydrogenated Amorphous ◽  
Degree Of Graphitization

Abstract For improving the wear resistance, thick silicon doped hydrogenated amorphous carbon (a-SiC:H) coatings were deposited on cold working tool steels by Plasma Enhanced Chemical Vapor Deposition (PECVD) technology. The increase of the acetylene (C2H2) flow rate distinctly tuned the microstructure of a-SiC:H coatings, including an increase in the coating thickness (>15 μm), a decrease in the silicon content, a greater sp2/sp3 ratio and higher degree of graphitization. The highest hardness of 19.61 GPa and the greatest critical load of 50.7 N were obtained. The coating showed low wear rates against different friction pairs and presented excellent abrasive wear resistance at high applied load and the wear rates decreased with increasing loads, which exhibited an outstanding application prospect in cold working tool steels.

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

A silicon-doped iridium electrode prepared by magnetron-sputtering as an advanced electrocatalyst for overall water splitting in acidic media

2019 ◽  
Vol 3 (9) ◽  
pp. 2321-2328 ◽  
Author(s):  
Zhandong Ren ◽  
Lingzhi Jin ◽  
Li Deng ◽  
Ruoxi Ming ◽  
Ailian Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Water Splitting ◽  
Water Electrolysis ◽  
Bifunctional Catalyst ◽  
Acidic Media ◽  
Overall Water Splitting ◽  
Si Doped ◽  
Silicon Doped

A Si-doped Ir electrode can be used as a bifunctional catalyst for overall water electrolysis in acidic media.

An efficient organic solvent-free solution-processing strategy for high-mobility metal chalcogenide film growth

2017 ◽  
Vol 19 (4) ◽  
pp. 946-951 ◽  
Author(s):  
Jie Zhao ◽  
Il Jeon ◽  
Qinghua Yi ◽  
Menka Jain ◽  
Mark H. Rummeli ◽  
...  
Keyword(s):  
Film Growth ◽  
High Mobility ◽  
Free Solution ◽  
Processing Strategy ◽  
Chemical Solution ◽  
High Quality ◽  
Metal Chalcogenide ◽  
Solution Approach ◽  
Chalcogenide Film ◽  
Quality Metal

One of the primary challenges for high-quality metal chalcogenide film growth by a chemical solution approach is to avoid the use of volatile/hazardous organic solvents during the fabrication processes.

High-mobility flexible thin-film transistors with a low-temperature zirconium-doped indium oxide channel layer

2016 ◽  
Vol 10 (6) ◽  
pp. 493-497 ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Channel Layer

Properties of Si Doped Al 0.4 Ga 0.6 N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD

2011 ◽  
Vol 28 (2) ◽  
pp. 027301 ◽  
Author(s):  
Chen-Hui Yu ◽  
Cheng Liu ◽  
Xiang-Yun Han ◽  
Wei Kang ◽  
Yan-Yan Fang ◽  
...  
Keyword(s):  
Window Layer ◽  
High Quality ◽  
Si Doped ◽  
Aln Buffer

Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 411-415
Author(s):  
Konstantin Vassilevski ◽  
Sandip K. Roy ◽  
Neal Wood ◽  
Alton B. Horsfall ◽  
Nick G. Wright
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Contact Resistivity ◽  
The Other ◽  
Capping Layer ◽  
Nitrogen Doped ◽  
Channel Layer ◽  
Heavily Doped ◽  
Process Compatibility ◽  
Post Implantation

Heavily doped layers were formed in 4H-SiC device epitaxial structures comprised of moderately doped n layer (channel) and heavily doped p+ layer (gate). The n+ regions were formed by local ion implantation of nitrogen followed by post-implantation annealing with graphite capping layer. It was shown that annealing at 1700 °C is required for complete activation of implanted impurities. The post-implantation anneals were found to have no significant effect on the moderately nitrogen doped channel layer. On the other hand it resulted in noticeable deterioration of electrical propertied of heavily doped epitaxial p+ layers leading to the increase of contact resistivity which has to be taken into account in design and processing of SiC devices.

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