scholarly journals Ion Implantation Doping and High Temperature Annealing of GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott crawford ◽  
A. J. Howard ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Deep Level ◽  
Ternary Alloys ◽  
Light Emitters ◽  
Force Microscopy ◽  
New Device ◽  
High Temperature Electronics ◽  
Defect Interactions ◽  
P Type

ABSTRACTThe III-V nitride-containing semiconductors InN, GaN, and AIN and their ternary alloys are the focus of extensive research for application to visible light emitters and as the basis for high temperature electronics. Recent advances in ion implantation doping of GaN and studies of the effect of rapid thermal annealing up to 1100 °C are making new device structures possible. Both p- and n-type implantation doping of GaN has been achieved using Mg co-implanted with P for p-type and Si-implantation for n-type. Electrical activation was achieved by rapid thermal anneals in excess of 1000 °C. Atomic force microscopy studies of the surface of GaN after a series of anneals from 750 to 1100 °C shows that the surface morphology gets smoother following anneals in Ar or N2. The photoluminescence of the annealed samples also shows enhanced bandedge emission for both annealing ambients. For the deep level emission near 2.2 eV, the sample annealed in N2 shows slightly reduced emission while the sample annealed in Ar shows increased emission. These annealing results suggest a combination of defect interactions occur during the high temperature processing.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Ion Implantation-Induced Defects and the Influence of Titanium Silicidation

1998 ◽  
Vol 510 ◽  
Author(s):  
D.Z. Chi ◽  
S. Ashok ◽  
D. Theodore
Keyword(s):  
Ion Implantation ◽  
Thermal Processing ◽  
Thermal Evolution ◽  
Deep Level ◽  
Rapid Thermal Processing ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Thermal Signature ◽  
P Type ◽  
Induced Defects

AbstractThermal evolution of ion implantation-induced defects and the influence of concurrent titanium silicidation in pre-amorphized p-type Si (implanted with 25 KeV, 1016 cm2Si+) under rapid thermal processing (RTP) have been investigated. Presence of implantation-induced electrically active defects has been confirmed by current-voltage (IV) and deep level transient spectroscopy (DLTS) measurements. DLTS characterization results show that the evolution of electrically active defects in the Si implanted samples under RTP depend critically on the RTP temperature: Hole traps HI (0.33 eV) and H4 (0.47 eV) appear after the highest temperature (950 °C) anneal, while a single trap H3 (0.26 eV) shows up at lower anneal temperatures (≤ 900 °C). The thermal signature of H4 defect is very similar to that of the iron interstitial while those of HI and H3 levels appear to originate from some interstitial-related defects, possibly complexes. A most interesting finding is that the above interstitial related defects can be eliminated completely with Ti silicidation, apparently a result of vacancy injection. However the silicidation process itself introduces a new H2 (0.30 eV) level, albeit at much lower concentration. This same H2 level is also seen in unimplanted samples under RTP. The paper will present details of defect evolution under various conditions of RTP for samples with and without the self-implantation and silicidation.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

1999 ◽  
Vol 74 (9) ◽  
pp. 1263-1265 ◽  
Author(s):  
C. R. Cho ◽  
N. Yarykin ◽  
R. A. Brown ◽  
O. Kononchuk ◽  
G. A. Rozgonyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Type Silicon ◽  
P Type

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 365-368 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Tsunenobu Kimoto
Keyword(s):  
High Temperature ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Implantation Damage ◽  
Transient Spectroscopy ◽  
P Type ◽  
Two Peaks ◽  
Dlts Spectra

The authors have investigated deep levels in the whole energy range of bandgap of 4H-SiC, which are generated by N+, P+, Al+ implantation, by deep level transient spectroscopy (DLTS). Ne+-implanted samples have been also prepared to investigate the pure implantation damage. In the n-type as-grown material, Z1/2 (Ec – 0.63 eV) and EH6/7 (Ec – 1.6 eV) are dominant deep levels. When the implant dose is low, seven peaks (IN1, IN3 ~ IN6, IN8, IN9) have emerged by implantation and annealing at 1000oC in the DLTS spectra from all n-type samples. After high-temperature annealing at 1700oC, however, most DLTS peaks disappeared, and two peaks, Z1/2 and EH6/7 survive. In the p-type as-grown material, D center (Ev + 0.40 eV) and HK4 (Ev + 1.4 eV) are dominant. When the implant dose is low, two peaks (IP1, IP3) have emerged by implantation and annealing at 1000oC, and four traps IP2, IP4 (Ev + 0.72 eV), IP7 (Ev + 1.3 eV), and IP8 (Ev + 1.4 eV) are dominant after annealing at 1700oC.

Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 313-317
Author(s):  
Jayantha Senawiratne ◽  
Jeffery S. Cites ◽  
James G. Couillard ◽  
Johannes Moll ◽  
Carlo A. Kosik Williams ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Isothermal Annealing ◽  
Deep Level ◽  
Conduction Band Edge ◽  
Strong Reduction ◽  
Deep Traps ◽  
Defect Sites ◽  
Transient Spectroscopy ◽  
Photocurrent Measurement ◽  
P Type

Electrically active defects induced by ion implantation of boron and phosphorus into silicon and their recovery under isothermal annealing at 450 °C were investigated using Deep Level Transient Spectroscopy (DLTS) and Energy Resolved Tunneling Photoconductivity (ERTP) spectroscopy at cryogenic temperatures. DLTS results show electrically active deep traps located at Ev+0.35 eV and Ev+0.53 eV in boron implanted Si and at Ev+0.34 eV, Ev+0.43 eV, and Ev+0.38 eV in phosphorus implanted Si. These meta-stable defect sites were found to be either eliminated or significantly reduced in thermally annealed samples. We assigned these defect sites to hydrogen and carbon incorporated complexes formed during ion implantation. Corroborating the DLTS results, the photocurrent measurement also revealed a strong reduction of electrically active defects states, extended from EC – 0.3 eV up to the conduction band edge of Si, upon isothermal annealing.

SCANNING PROBE ANALYSIS OF DEFECTS INDUCED BY SLIGHT IRON CONTAMINATION ON THERMALLY OXIDIZED p-TYPE SILICON WAFERS

2003 ◽  
Vol 02 (04n05) ◽  
pp. 349-355
Author(s):  
M. N. CHANG ◽  
C. Y. CHEN ◽  
F. M. PAN ◽  
T. Y. CHANG ◽  
T. F. LEI
Keyword(s):  
Deep Level ◽  
Scanning Probe ◽  
Interface Traps ◽  
Defect Region ◽  
Force Microscopy ◽  
Atomic Force ◽  
Iron Contamination ◽  
Thermal Oxide ◽  
Dc Bias ◽  
P Type

In this article, we have demonstrated the investigation of scanning probe microscopy on the defects induced by slight iron contamination on p-type Si wafers with ultrathin thermal oxide layer. Using scanning capacitance microscopy (SCM) associated with atomic force microscopy, it is revealed that iron contamination induces interface traps, which significantly perturb the depletion behavior of the silicon surface. Moreover, experimental results also indicate that iron contamination leads to the lifetime decrease and the density increase of minority carriers in the defect region. From the dC/dV–V profiles, the defect region with the highest density of the interface traps also has the highest density of the deep-level traps. At a proper dc bias, the defect region clearly exhibits an obvious contrast in the SCM images.

Formation of D-Center in p-Type 4H-SiC Epi-Layers during High Temperature Treatments

2017 ◽  
Vol 897 ◽  
pp. 262-265 ◽  
Author(s):  
Hussein M. Ayedh ◽  
Naoya Iwamoto ◽  
Roberta Nipoti ◽  
Anders Hallén ◽  
Bengt Gunnar Svensson
Keyword(s):  
Heat Treatment ◽  
High Temperature ◽  
Room Temperature ◽  
Deep Level ◽  
Implantation Dose ◽  
Inductive Heating ◽  
Valence Band Edge ◽  
High Temperature Processing ◽  
P Type ◽  
Different Doses

The current work is devoted to studying the evolution of deep level defects in the lower half of the 4H-SiC bandgap after high temperature processing and ion implantation. Two as-grown and pre-oxidized 4H-SiC sets of samples have been thermally treated at temperatures up to 1950 °C for 10 min duration using RF inductive heating. Another set of as grown samples was implanted by 4.2 MeV Si ions at room temperature (RT) with different doses (1-4×108 cm-2). The so-called “D-center” at EV+0.6 eV dominates and forms after the elevated heat treatments, while it shows no change after the ion implantations (EV denotes the valence band edge). In contrast, the concentration of the so-called HK4 level at EV+1.44 eV increases with the implantation dose, whereas it anneals out after heat treatment at ≥ 1700 °C.

scholarly journals Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

2018 ◽  
Vol 924 ◽  
pp. 357-360
Author(s):  
Massimo Zimbone ◽  
Nicolò Piluso ◽  
Grazia Litrico ◽  
Roberta Nipoti ◽  
Riccardo Reitano ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Crucial Role ◽  
The Body ◽  
Crystal Quality ◽  
High Temperature Annealing ◽  
Double Step ◽  
Lower Temperature ◽  
P Type

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n-and p-type zones of the device.

Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 651-654 ◽  
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Toru Hiyoshi ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto
Keyword(s):  
Ion Implantation ◽  
Thermal Oxidation ◽  
Deep Level Transient Spectroscopy ◽  
Low Dose ◽  
Deep Level ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Bulk Region ◽  
Transient Spectroscopy ◽  
P Type

The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated by ion implantation, by deep level transient spectroscopy (DLTS). The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700oC, IN3 (Z1/2: Ec – 0.63 eV) and IN9 (EH6/7: Ec – 1.5 eV) in low-dose-implanted samples, can be remarkably reduced by oxidation at 1150oC. However, in p-type samples, the IP8 (HK4: Ev + 1.4 eV) survives and additional defects, several defects such as IP4 (HK0: Ev + 0.72 eV) appear after thermal oxidation in low-dose-implanted samples. The defects except for the IP8 center can be reduced by subsequent annealing at 1400oC. These phenomena are explained by a model that excess interstitials are generated at the oxidizing interface and diffuse into the bulk region.

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