Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

1995 ◽  
Vol 395 ◽  
Author(s):  
F. Semendy ◽  
N. Bambha ◽  
J.G. Kim ◽  
H. Liu ◽  
R.M. Park
Keyword(s):  
Optical Properties ◽  
Molecular Beam ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Rf Plasma Discharge

ABSTRACTBoth wurtzite-and zincblende-GaN films have been grown on sapphire and MgO substrates, respectively, and examined by photoluminescence and x-ray analysis. GaN films were grown on suitably prepared Al2O3 and MgO substrates by molecular beam epitaxy employing a rf plasma discharge, nitrogen free radical source. The wurtzite-and zincblende-GaN films exhibited dominant near band-edge emission, the nature of which will be compared and contrasted for both phases in this paper. X-ray diffraction data for both phases will also be discussed.

Al2O3 as a Transition Layer for GaN and InGaN Growth on ZnO by MOCVD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Nola Li ◽  
Shen-Jie Wang ◽  
William E. Fenwick ◽  
Andrew Melton ◽  
Chung-Lung Huang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Chemical Vapor ◽  
Shallow Donor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
20 Nm ◽  
Related Level

AbstractGaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photoluminescence (RT-PL) showed the red shift of the GaN near band-edge emission, which might be from oxygen incorporation forming a shallow donor-related level in GaN. HRXRD measurements revealed that (0002) InGaN layers were also successfully grown on 20nm Al2O3/ZnO substrates. In addition, thick InGaN layers (∼200-300nm) were successfully grown on Al2O3/ZnO and bare ZnO substrates. These results are significant as previous studies showed decomposition of the layer at InGaN thicknesses of 100nm or less.

Pendeo-Epitaxial Growth of GaN on SiC and Silicon Substrates via Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 572 ◽  
Author(s):  
K. J. Linthicum ◽  
T. Gehrke ◽  
D. Thomson ◽  
C. Ronning ◽  
E. P. Carlson ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
Silicon Substrates ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
Edge Emission ◽  
X Ray ◽  
Si Substrates ◽  
Crystallographic Tilt

ABSTRACTPendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (011) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited ∼0.2° crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM ∼ 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM ∼ 4 meV).

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Investigation of Ti Doping on the Structural, Optical and Magnetic Properties of ZnO Nanoparticles

2021 ◽  
Author(s):  
Raji P ◽  
K Balachandra Kumar
Keyword(s):  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Infrared Analysis ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Absorption Bands ◽  
X Ray ◽  
Co Precipitation ◽  
Ti Doping

Abstract Ti - doped ZnO (TixZn1-xO x= 0.00, 0.05, 0.10, 0.15) nanoparticles have been synthesized through co - precipitation approach. X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL), UV-Visible spectroscopy, and Vibrating Sample Magnetometer (VSM) have been used to characterize the samples. X-Ray Diffraction (XRD) analysis manifested the hexagonal wurtzite structure. The crystallite size decreased from 37 ​nm to 29 ​nm as dopant concentration is increased. Fourier transform infrared analysis showed the absorption bands of ZnO, with few within the intensities. SEM investigation showed the irregular shape and agglomeration of the particles. Ti, Zn, and O composition were determined from EDX analysis and confirmed the purity of the samples.PL spectra showed a near band edge emission and visible emission.Vibrating sample magnetometer (VSM) demonstrated pure and doped samples exhibited ferromagnetism behavior at room temperature.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Growth and Characterization of BxGal-xN on 6H-SiC (0001) by MOVPE

1998 ◽  
Vol 537 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

AbstractBoron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGal-xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGal-xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGal-xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGal-xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP

1994 ◽  
Vol 340 ◽  
Author(s):  
Z. C. Feng ◽  
S. J. Chua ◽  
A. Raman ◽  
N.N. Lim
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Molecular Beam ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Lattice Matched ◽  
Comprehensive Characterization

ABSTRACTA variety of Inl-xGaxAs, Inl-yAlyAs and Inl-x-yGaxAlyAs films have been grown on InP by molecular beam epitaxy. A comprehensive characterization was performed using Raman scattering, photoluminescence (PL), Fourier transform infrared (FTIR) spectroscopy and double crystal X-ray diffraction on these ternary and quaternary heterostructures with different compositions and growth conditions. The lattice matched and mismatched structures are studied. Our analyses show that the interface mismatch exerts an important influence on the optical properties of these heterostructures, and conversely that Raman, PL and FTIR can be used to probe the interface mismatch nondestructively.

Growth and Characterization of GaN Thin Films on Si(111) Substrates Using SiC Intermediate Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
K. Y. Lim ◽  
K. J. Lee ◽  
C. I. Park ◽  
K.C. Kim ◽  
S. C. Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Buffer Layer ◽  
Vapor Deposition ◽  
Intermediate Layer ◽  
Chemical Vapor ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Buffer Layer

AbstractGaN films have been grown atop Si-terminated 3C-SiC intermediate layer on Si(111) substrates using low pressure metalorganic chemical vapor deposition (LP-MOCVD). The SiC intermediate layer was grown by chemical vapor deposition (CVD) using tetramethylsilane (TMS) as the single source precursor. The Si terminated SiC surface was obtained by immediately flow of SiH4 gas after growth of SiC film. LP-MOCVD growth of GaN on 3C-SiC/Si(111) was carried out with trimethylgallium (TMG) and NH3. Single crystalline hexagonal GaN layers can be grown on Si terminated SiC intermediate layer using an AlN or GaN buffer layer. Compared with GaN layers grown using a GaN buffer layer, the crystal qualities of GaN films with AlN buffer layers are extremely improved. The GaN films were characterized by x-ray diffraction (XRD), photoluminescence (PL) and scanning electron microscopy (SEM). Full width at half maximum (FWHM) of double crystal x-ray diffraction (DCXD) rocking curve for GaN (0002) on 3C-SiC/Si(111) was 890 arcsec. PL near band edge emission peak position and FWHM at room temperature are 3.38 eV and 79.35 meV, respectively.

Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy

1998 ◽  
Vol 512 ◽  
Author(s):  
E. C. Piquette ◽  
P. M. Bridger ◽  
Z. Z. Bandić ◽  
T. C. Mcgill
Keyword(s):  
Electric Fields ◽  
Molecular Beam ◽  
Plasma Source ◽  
Rf Plasma ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Wide Range ◽  
Device Structures ◽  
Hall Technique

ABSTRACTGaN, AlGaN, AIN were grown on (0001) A1203 substrates by MBE using a RF plasma source and employing an AIN buffer layer. The films were characterized by RHEED, AFM, and x-ray diffraction, and electrical properties were measured by Hall technique. RHEED observations indicate that the polarity of the films is likely predominantly N-face, although Ga-face inversion domains can be observed in some films by AFM. Symmetric x-ray rocking curve widths as low as 39 arcseconds are achieved for some layers, while asymmetric peaks show widths of 240–300 arcsec. Control of Si doping over a wide range is demonstrated, which is important for design of high power device structures. Gold Schottky barrier m-v-n+diodes were fabricated which achieve high reverse electric fields before edge breakdown.

Index of Refraction Anisotropy in InGaAs/InP Heterostructures Measured by Ellipsometry

1989 ◽  
Vol 160 ◽  
Author(s):  
Brian R. Bennett ◽  
Jesús A. Del Alamo
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Index Of Refraction ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Asymmetric Pattern ◽  
Optical Effects

AbstractWe applied ellipsometry to characterize layers of InxGa1-xAs grown by molecular beam epitaxy on (001) InP. Samples with mismatched layers exhibit significant anisotropy in the index of refraction. We explain these observations by the presence of misfit dislocations which form in an asymmetric pattern. This results in asymmetric strain and, via piezo-optical effects, an anisotropy in the optical properties. This effect makes ellipsometry a more sensitive technique than double-crystal x-ray diffraction for detecting misfit dislocations in these heterostructures.

Sign in / Sign up

Export Citation Format

Share Document