scholarly journals Simulation of Multicomponent Thin Film Deposition and Growth

1995 ◽  
Vol 389 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky
Keyword(s):  
Thin Film Deposition ◽  
Detailed Examination ◽  
Growth Conditions ◽  
Film Deposition ◽  
Unit Cell ◽  
Deposition Rates ◽  
Cell Height ◽  
Amplitude Data ◽  
Multi Stage ◽  
Growth Modes

ABSTRACTResults from a multicomponent Monte Carlo simulation of the deposition and growth of YBa2Cu3O7 are presented and discussed. In particular, a detailed examination of the growth modes active during different morphological growth conditions is performed. At higher deposition rates, both [001] and [100] epitaxial variants (‘c’ and ‘a’ type growth, respectively) are observed to grow by modes attributed to the classic Volmer-Weber mechanism. At very low deposition rates, the film is observed to grow in a distinct, cyclic, multi-stage process. Small islands of [001] epitaxy nucleate and grow to one unit cell height followed by primarily horizontal growth or “ledge extension” until one unit cell layer has formed. This process then repeats. Simulated RHEED amplitude data from this growth process compares favorably to experimentally obtained data.

Growth of AlN and TiN Structures by Plasma-Enhanced Pulsed Laser Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Edward Poindexter ◽  
Yan Xin ◽  
Steven M. Durbin
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Plasma Source ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Rf Plasma ◽  
Nitrogen Species ◽  
Active Nitrogen

AbstractNitride materials are of interest for a wide variety of applications, including wear-resistant coatings, insulating layers, high-temperature semiconductor devices, and short-wavelength emitters and detectors. TiN and AlN appear to be particularly amenable to crystalline thin film deposition, with stoichiometric material easily obtained even without the use of active nitrogen species. This paper describes the growth of crystalline AlN and TiN thin films on silicon and sapphire substrates using a KrF excimer laser (λ = 248 nm) to ablate elemental metallic targets, and an inductively-coupled RF plasma source to supply active nitrogen species. Growth was monitored in-situ using reflection high-energy electron diffraction (RHEED), and films were characterised using fourier-transform infrared spectroscopy (FTIR) and electron microscopy techniques. Optimised growth conditions led to single-crystal growth of TiN on both substrates, but only polycrystalline AlN was formed directly. Use of a TiN buffer layer on (0001) sapphire led to the successful growth of a single-crystal AlN layer as confirmed by RHEED and high-resolution transmission electron microscopy (HRTEM).

Thin Coating Deposition by Magnetron Sputtering

2018 ◽  
pp. 403-428 ◽  
Author(s):  
Peter Ifeolu Odetola ◽  
Patricia A. P. Popoola ◽  
Philip Oladijo
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Film Formation ◽  
Semiconductor Industry ◽  
Target Material ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
High Energy ◽  
Film Deposition ◽  
Atomic Scale

Advances in thin-film deposition expose new frontiers to structures and phases that are inaccessible by conventional chemical means and have led to innovative modification of existing materials' properties. Thin-film deposition by magnetron sputtering is highly dependent on ion bombardments; coupled with sublimation of solid target unto the substrate through momentum transfer. It is summarily base on phase change of target material under high-energy influence; corresponding controlled condensation of sputtered atoms on substrate material during which process parameters and growth conditions dictate the pace of the atomic scale processes for thin-film formation. Magnetron sputtering is a state-of-the-art thin film deposition technique versatile for several unique applications, especially in the semiconductor industry. Magnetron sputtering is very novel in its use to achieve low-pressure condition that maximizes and conserve stream of electrons for effective knocking of inert atoms into ions. This ensures the high-energy acquired is not dissipated in gas-phase collisions.

Effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by vapor–liquid–solid growth

2006 ◽  
Vol 21 (11) ◽  
pp. 2876-2881 ◽  
Author(s):  
Kok-Keong Lew ◽  
Ling Pan ◽  
Elizabeth C. Dickey ◽  
Joan M. Redwing
Keyword(s):  
Composition Range ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
Film Deposition ◽  
Vapor Liquid Solid ◽  
Transmission Electron ◽  
Composition And Structure ◽  
Nanowire Surface ◽  
Gas Ratio ◽  
Vapor Liquid

The effect of growth conditions on the composition and structure of Si1−xGex nanowires grown by the vapor–liquid–solid method using gaseous precursors (SiH4 and GeH4) was investigated. Transmission electron microscopy was used to characterize the structural properties and elemental composition of the nanowires. At higher growth temperatures (>425 °C), Ge thin film deposition on the nanowire surface resulted in Au loss during growth and the formation of tapered structures. By simultaneously reducing the growth temperature from 425 to 325 °C to suppress the rate of Ge film deposition and increasing the GeH4/(GeH4 + SiH4) gas ratio, Si1−xGex nanowires were produced with Ge fractions spanning the entire composition range. The Ge fraction follows that predicted from the elemental nanowire growth rates in the Ge-rich (x > 0.5) regime, but deviates to higher Ge fractions in Si-rich (x < 0.5) nanowires. A mechanism was proposed whereby surface diffusion provides an additional pathway to Ge incorporation in Si-rich Si1−xGex nanowires.

A computational study of SrTiO3 thin film deposition: Morphology and growth modes

2009 ◽  
Vol 24 (6) ◽  
pp. 1994-2000 ◽  
Author(s):  
Jennifer L. Wohlwend ◽  
Cosima N. Boswell ◽  
Simon R. Phillpot ◽  
Susan B. Sinnott
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computational Study ◽  
Thin Film Deposition ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Growth Modes ◽  
Deposition Processes ◽  
Dynamics Simulations

The growth of SrTiO3 (STO) thin films is examined using classical molecular dynamics simulations. First, a beam of alternating SrO and TiO2 molecules is deposited on the (001) surface of STO with incident kinetic energies of 0.1, 0.5, or 1.0 eV/atom. Second, deposition of alternating SrO and TiO2 monolayers, where both have incident energies of 1.0 eV/atom, is examined. The resulting thin film morphologies predicted by the simulations are compared to available experimental data. The simulations indicate the way in which the incident energy, surface termination, and beam composition influence the morphology of the thin films. On the whole, some layer-by-layer growth is predicted to occur on both SrO- and TiO2-terminated STO for both types of deposition processes, with the alternating monolayer approach yielding thin films with compositions that are much closer to that of bulk STO.

ZnO Thin Film Deposition on Sapphire Substrates by Chemical Vapor Deposition

2009 ◽  
Vol 1167 ◽  
Author(s):  
Zhuo Chen ◽  
Tom Salagaj ◽  
Christopher Jensen ◽  
Karlheinz Strobl ◽  
Mim Nakarmi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Growth Conditions ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Enhanced Absorption ◽  
Sapphire Substrates

AbstractZnO thin films with thickness around 200 nm were deposited on a-plane sapphire substrates by Chemical Vapor Deposition (CVD) method with a mixed ZnO-powder/C-powder solid source. These films were characterized by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and photoluminescence (PL) spectroscopy. The correlation between surface structural properties of ZnO thin films and their optical signature measured by temperature dependence of PL is investigated for various growth conditions such as flow rate O2 injection gas and growth temperature. At room temperature, the columbic interaction enhanced absorption edge of 3.305 eV of these films was determined by optical absorption measurements.

Characterization of Sputtered Films using the Scanning Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 44-45
Author(s):  
R. F. Schneidmiller ◽  
W. F. Thrower ◽  
C. Ang
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Microelectronic Devices ◽  
Control Film ◽  
Scanning Electron

Solid state materials in the form of thin films have found increasing structural and electronic applications. Among the multitude of thin film deposition techniques, the radio frequency induced plasma sputtering has gained considerable utilization in recent years through advances in equipment design and process improvement, as well as the discovery of the versatility of the process to control film properties. In our laboratory we have used the scanning electron microscope extensively in the direct and indirect characterization of sputtered films for correlation with their physical and electrical properties.Scanning electron microscopy is a powerful tool for the examination of surfaces of solids and for the failure analysis of structural components and microelectronic devices.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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