Comparison of Damage Accumulation Models for Boron Implantation in Silicon

1995 ◽  
Vol 389 ◽  
Author(s):  
A. Simionescu ◽  
G. Hobler
Keyword(s):  
Damage Accumulation ◽  
Saturation Density ◽  
Implantation Energy ◽  
Model Predictions ◽  
Boron Implantation ◽  
Capture Radius

ABSTRACTTwo models of damage accumulation during boron implantation are compared: The first one analyzes the full collision cascades and lets vacancies and interstitials recombine, if they are located within some capture radius of each other. The second one uses a constant fraction of defects surviving damage annihilation within a recoil cascade and a damage saturation density to take into account recombination with defects generated in previous cascades. While the first model is more fundamental, the second one is computationally more efficient. By comparing model predictions with 20 keV boron implantations at various doses, performed into (100) and (110) silicon with 7° and 0°, respectively, we conclude that different capture radii have to be used for damage annihilation within the recoil cascades and with defects generated in previous cascades. Moreover, we show that the two models are almost equivalent, if appropriate parameters are chosen. Recombination factors determined from simulations using a capture radius are almost independent of depth and implantation energy.

Electrical Defects of Shallow (P+/N) Junctions Formed by Boron Implantation into Ge-Preamorphized Si-Substrates

1997 ◽  
Vol 469 ◽  
Author(s):  
D. Alquier ◽  
M. Benzohra ◽  
F. Boussaid ◽  
F. Olivie ◽  
A. Martinez
Keyword(s):  
Deep Level ◽  
Electrical Measurements ◽  
Implantation Energy ◽  
Dopant Activation ◽  
Si Substrates ◽  
Current Voltage ◽  
Boron Implantation ◽  
Carrier Traps ◽  
Judicious Choice ◽  
Transient Spectroscopy

ABSTRACTIn this paper, we report Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements on ultra-shallow (p+/n) junctions obtained by boron implantation into crystalline and Ge preamorphized Si-substrates. Germanium implantations were carried out at the energies of 30, 60 and 150 keV at a dose of 1015 cm−2. Boron was then implanted at an energy of 3 keV at a dose of 1015 cm−2. Dopant activation was obtained by Rapid Thermal Annealing (RTA) performed at 950°C for 15s in a nitrogen ambient. The aim of this work is to study the relation that exists between a population of End-Of-Range (EOR) defects, measured by TEM, and electrical properties of the Ge preamorphized diodes. The electrical measurements allow us to give the conduction mechanism which dominates in the diodes. Moreover, DLTS measurements showed the presence of two majority-carrier traps in direct relation with the EOR defects, measured at Ec-0,22eV and Ec-0,47eV. The presence of energy-distributed G-R centers independent upon the preamorphization stage is also discussed. Nevertheless, high quality (p+/n) junctions can be obtained by this technology with a judicious choice of Ge implantation energy.

Identification of Metal-Impurity Gettering Sites in Silicon Formed by Supersaturation Boron Implantation and Annealing Using HRTEM and STEM Micro Analysis

1997 ◽  
Vol 3 (S2) ◽  
pp. 455-456
Author(s):  
T. J. Headley ◽  
J. R. Michael ◽  
S. M. Myers ◽  
G. A. Petersen ◽  
T. L. Aselage ◽  
...  
Keyword(s):  
Elevated Temperatures ◽  
Metal Impurity ◽  
Implantation Energy ◽  
Saturation Limit ◽  
Metal Impurities ◽  
New Methods ◽  
Microelectronic Devices ◽  
Transition Metal Impurities ◽  
Boron Implantation ◽  
Micro Analysis

Future Si microelectronic devices will require increasingly stringent limits on transition-metal impurities. There is thus a need to develop new methods for impurity gettering that rely on gettering sites that are active for arbitrarily small impurity concentrations, below the characteristic solid solubility at which metal suicides precipitate. These sites must also be highly preferred relative to solution sites in the Si matrix even at elevated temperatures. One such method has been developed that is also expected to be compatible with front (device) side gettering enabling smaller diffusion lengths for lower processing temperatures. This method involves boron implantion in the front side to levels above the boron-saturation limit and annealing to generate the gettering sites. The gettering layer is introduced at a depth beneath the device zone through appropriate choice of implantation energy. SIMS compositional profiling shows transition metals are strongly gettered within the boron-supersaturated layer. The purpose of this study was to identify the structure and composition of the gettering sites within the boron-supersaturated layer.

Residual Damage in Heavily Germanium-Doped Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
Esin Demirlioğlu ◽  
Sheldon Aronowitz ◽  
David Su
Keyword(s):  
Low Dose ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Cross Sectional ◽  
Implantation Energy ◽  
Damage Layer ◽  
Transmission Electron ◽  
Boron Implantation ◽  
Residual Damage ◽  
High Doses

ABSTRACTCross-sectional transmission electron microscopy (XTEM) studies have shown that two distinct damage regions are created when germanium is implanted into single-crystal silicon in high doses and subsequently annealed at high temperatures. The first layer extends approximately 90–95 nm into silicon for an implant energy of 120 keV. The second region is an end-of-range damage region located 200 nm from the silicon surface for the same implantation energy. Neither low-dose, low-energy boron implantation nor the type of cap layers used during annealing alter the damage pattern. Although the dose of the Ge implants is the major factor in the formation of the continuous damage layer, high oxygen concentration at the surface may also contribute to this effect.

Fast and Accurate in-Line Monitor of Boron Implantation Energy and Dose by Spectroscopic Ellipsometry

2014 ◽  
Vol 64 (6) ◽  
pp. 417-422
Author(s):  
T.-Y. Wen ◽  
T.-W. Lu ◽  
Y.-R. Wang ◽  
C.-F. Lin ◽  
J. Y. Wu ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Implantation Energy ◽  
Boron Implantation

Fatigue of Unidirectional Cord-Rubber Composites

1999 ◽  
Vol 27 (1) ◽  
pp. 48-57 ◽  
Author(s):  
Y. Liu ◽  
Z. Wan ◽  
Z. Tian ◽  
X. Du ◽  
J. Jiang ◽  
...  
Keyword(s):  
Damage Accumulation ◽  
Fatigue Testing ◽  
Fatigue Behavior ◽  
Constant Load ◽  
Testing System ◽  
Rubber Composites ◽  
Cycle Frequency ◽  
Periodic Loading ◽  
Fatigue Damage Accumulation ◽  
Rubber Composite

Abstract A fatigue testing system is established with which the real-time recording of stress, strain, temperature, and hysteresis loss of rubbers or cord-rubber composite specimens subjected to periodic loading or extension can be successfully carried out. Several problems are connected with the experimental study of the fatigue of rubber composites. In constant extension cycling, the specimen becomes relaxed because of the viscoelasticity of rubber composites, and the imposed tension-tension deformation becomes complex. In this method, the specimen is unlikely to fail unless the imposed extensions are very large. Constant load cycling can avoid the shortcomings of constant extension cycling. The specially designed clamps ensure that the specimen does not slip when the load retains a constant value. The Deformation and fatigue damage accumulation processes of rubber composites under periodic loading are also examined. Obviously, the effect of cycle frequency on the fatigue life of rubber composites can not be ignored because of the viscoelasticity of constituent materials. The increase of specimen surface temperature is relatively small in the case of 1 Hz, but the temperature can easily reach 100°C at the 8 Hz frequency. A method for evaluating the fatigue behavior of tires is proposed.

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