Modeling of Aspect Ratio Dependent Etching in an Inductively Coupled Plasma

1995 ◽  
Vol 389 ◽  
Author(s):  
J.S. Han ◽  
J.P. McVittie
Keyword(s):  
Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Saturation Model ◽  
Langmuir Adsorption ◽  
Inductively Coupled ◽  
Aspect Ratios ◽  
Yield Information ◽  
Polymer Deposition ◽  
Ratio Dependent ◽  
The Difference

ABSTRACTSPEEDIE is used to simulate aspect ratio dependent etching of silicon dioxide in an inductively coupled plasma. Overhang test structures and standard via/trench structures are etched in the system under standard processing conditions. Results from the overhang test structure yield information about the ion angular distribution and aid in the development of the model. The simultaneous etching and deposition model includes such effects as ion enhanced polymer deposition, angle dependent polymer sputtering, Langmuir adsorption saturation model, and surface dependent sticking probability. The model is able to capture all the lag trends, defined as the difference in etch rate for different aspect ratios, and profiles accurately.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Number of spikes in single particle ICP-MS time scans: from the very dilute to the highly concentrated range

2021 ◽  
Author(s):  
Pierre-Emmanuel Peyneau ◽  
Martin Guillon
Keyword(s):  
Single Particle ◽  
Inductively Coupled Plasma ◽  
Particle Number ◽  
Number Concentration ◽  
Particle Number Concentration ◽  
Inductively Coupled ◽  
Nanoparticle Dispersions ◽  
Icp Ms ◽  
Plasma Mass Spectrometry ◽  
The Difference

The particle number concentration (PNC) of dilute nanoparticle dispersions can be determined by single particle inductively coupled plasma-mass spectrometry (sp-ICP-MS). Virtually equal to zero for very dilute dispersions, the difference...

Comparing the Physico-Chemical Characteristics of Formulated and Marketed Yashada Bhasma

2021 ◽  
pp. 6392-6398
Author(s):  
Nitu Bhatnagar ◽  
Avani Pareek
Keyword(s):  
Inductively Coupled Plasma ◽  
Thermo Gravimetric Analysis ◽  
Human Consumption ◽  
Chemical Characteristics ◽  
Gravimetric Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled ◽  
Physico Chemical ◽  
The Difference

The present study is aimed to observe the difference in the Physico-Chemical characteristics of the marketed and formulated bhasma samples through X-Ray Diffraction analysis (XRD), Dynamic Light Scattering (DLS), Zeta potential, Thermo-Gravimetric analysis (TGA), Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray analysis (EDAX), apart from organoleptic methods. Inductively Coupled Plasma Mass Spectroscopy (ICPMS) analysis was also done to observe the presence of trace and heavy metals so that the safety of all these samples could be ensured. XRD shows variation in oxide nature of zinc as well crystallite size in all bhasma samples. DLS and SEM results show difference in particle size of marketed bhasma samples as compared to formulated Yashada bhasma. EDAX and ICPMS also confirm the alteration in elemental composition of all these bhasma samples. Thus, it can be concluded that these ayurvedic medicines should be prepared strictly using the formulation methods as mentioned in the Ayurvedic texts. This will help the prepared products to adopt the inherent quality of the ancient system of medicine, which shall be useful and devoid of any side effects for human consumption.

Feature Evolution During Sub 100NM Gap-Fill and Etch

2005 ◽  
Author(s):  
Hemant Mungekar ◽  
Young S. Lee ◽  
Shankar Venkataraman
Keyword(s):  
Inductively Coupled Plasma ◽  
Scale Up ◽  
High Plasma ◽  
Inductively Coupled ◽  
Positive Ions ◽  
Aspect Ratios ◽  
High Plasma Density ◽  
Semiconductor Fabrication ◽  
Wafer Size ◽  
Feature Evolution

Inductively coupled plasma (ICP) reactors are being used at low gas pressure (<100mTorr) and high plasma density ([e] > 1013/cm2) processes in semiconductor fabrication. In these reactors plasma is generated by inductively coupled electric field while positive ions are accelerated anisotropically by applying a negative bias RF to the substrate. Semiconductor manufacturers face many challenges as wafer size increases while device geometries decrease. Two key challenges for both process design and electronics processing equipment design are (a) scale up of process from 200mm to 300mm diameter substrate, and (b) deposition and etching features with high aspect ratios. A unified phenomenological model to explain profile evolution trend as a function of aspect ratio for deposition (gap fill) and trench etch using ICP reactors is presented. Trends for feature evolution as a function of pressure for gap fill and trench etch are reviewed and explained. The article emphasizes importance of low pressure for sub-100nm gap-fill and trench-etch applications in ICP processing reactors.

Research on the Combustion Characteristics of Small-Scaled Ethanol Pool Fire of Different Aspect Ratios

2011 ◽  
Vol 347-353 ◽  
pp. 1161-1165
Author(s):  
Cui Peng Kuang ◽  
Yuan Zhou Li ◽  
Shi Zhu ◽  
Shao Hua Mao
Keyword(s):  
Temperature Distribution ◽  
Aspect Ratio ◽  
Loss Rate ◽  
Mass Loss Rate ◽  
Pool Fire ◽  
Aspect Ratios ◽  
Fire Experiment ◽  
The Difference ◽  
Experimental Values ◽  
Centerline Temperature

Four groups of small-scaled ethanol pool fire experiment with different aspect-ratio(s) is undertaken, to gauge the mass loss rate of fuel as well as the plume centerline temperature distribution. Comparison of plume centerline temperature is made between the theoretical values estimated by Heskestad plume model and experimental results, which indicates that: with the increasing of s, the difference between theoretical values and experimental values tend to grow greater; and when s≈1, theoretical values and experimental values cohere well.

scholarly journals Dietary Zinc Supplementation to Prevent Chronic Copper Poisoning in Sheep

Animals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 227 ◽  
Author(s):  
Antonio Minervino ◽  
Marta López-Alonso ◽  
Raimundo Barrêto Júnior ◽  
Frederico Rodrigues ◽  
Carolina Araújo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Emission Spectrometry ◽  
Control Group ◽  
Treatment Groups ◽  
Inductively Coupled ◽  
Hepatic Copper ◽  
Cu Accumulation ◽  
The Difference ◽  
Hepatic Metallothionein

The aim of this study was to evaluate whether zinc (Zn) supplementation protects against hepatic copper (Cu) accumulation in copper-loaded sheep. Forty cross-bred lambs were assigned to five experimental groups. These included the control group (C) and four treatment groups that received Cu and/or Zn supplementation (dry matter (DM) basis) over 14 weeks, as follows: Cu (450 mg Cu/kg); Zn-35 (450 mg Cu + 35 mg Zn/kg); Zn-150 (450 mg Cu + 150 mg Zn/kg); and Zn-300 (450 mg Cu + 300 mg Zn/kg). Blood, liver, and bile samples were obtained for mineral determination by inductively coupled plasma optical emission spectrometry (ICP–OES). The hepatic metallothionein (MT) concentrations were also determined. At the end of the experiment, hepatic Cu concentrations were higher in all Cu-supplemented groups than in C. Hepatic Cu accumulation was lower in the groups receiving the Zn supplementation than in the Cu group, although the difference was only statistically significant (66%) in the Zn-300 group. The MT concentrations tended to be higher (almost two-fold) in the Zn groups (but were not dose related) than in the C and Cu groups, and they were related to hepatic Zn concentrations. Zn supplementation at 300 mg/kg DM is useful for preventing excessive hepatic Cu accumulation in sheep exposed to high dietary concentrations of Cu.

Design guidelines to mitigate distortion in material jetting specimens

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Kamran Kardel ◽  
Ali Khoshkhoo ◽  
Andres L. Carrano
Keyword(s):  
Aspect Ratio ◽  
Layer Thickness ◽  
Design Guidelines ◽  
Geometrical Parameters ◽  
Content Type ◽  
Build Orientation ◽  
Aspect Ratios ◽  
Wide Range ◽  
The Difference ◽  
Part Thickness

Purpose The purpose of this paper is to investigate the effects of layer thickness, aspect ratio, part thickness and build orientation on distortion to have a better understanding of its behavior in material jetting technology. Design/methodology/approach Specimens with two layer thicknesses (14 and 28 µm) were printed in two aspect ratios (2:1) and (10:1), four thickness values (1, 2, 3 and 4 mm) and three build orientations (45d, XY and YX) and scanned with a wide-area 3D surface scanner to quantify distortion. The material used to build the test specimens was a commercially available resin, VeroWhitePlus RGD835. Findings The results of this study showed that all printed specimens by material jetting 3D printers had some level of distortion. The 1-mm thickness specimens, for both layer thicknesses of 14 µm and 28 µm, showed a wide range of anomalies including reverse coil set (RCS), reverse cross bow (RCB), cross bow (CB), wavy edge (WE) and some moderate twisting (T). Similar occurrences were observed for the 2-mm thickness specimens as there were RCS, WE, RCB and T anomalies that show the difference between the thinner specimens (1- and 2-mm) with the thicker ones (3- and 4-mm). In both 3- and 4-mm thickness specimens, there was more consistency in terms of distortion with mainly RCS and RCB anomalies. In total, six different types of flatness anomalies were found to occur with the following incidences: reverse coil set (91 specimens, 63.19%), reverse cross bow (50 specimens, 34.72%), wavy edge (23 specimens, 15.97%), twist (19 specimens, 12.50%), coil set (11 specimens, 7.64%) and cross bow (7 specimens, 4.86%). Originality/value This study expands the research on how the preprocess parameters such as layer thickness and build orientation and the geometrical parameters such as part thickness and aspect ratio cause dimensional distortion. Distortion is a pervasive consequence of the curing process in photopolymerization and explores one of the most common defects that come across in polymeric-based additive manufacturing. In addition to the characterization of the type and magnitude of distortion, the contributions of this work also include establishing the foundation for design guidelines aiming at minimizing distortion in material jetting.

Inductive Coupled Plasma Etching of High Aspect Ratio Silicon Carbide Microchannels for Localized Cooling

2015 ◽  
Author(s):  
Karen M. Dowling ◽  
Ateeq J. Suria ◽  
Yoonjin Won ◽  
Ashwin Shankar ◽  
Hyoungsoon Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Hot Spot ◽  
Transfer Coefficients ◽  
Inductively Coupled ◽  
Heat Transfer Coefficients ◽  
Icp Etching ◽  
On Chip

High aspect ratio microchannels using high thermal conductivity materials such as silicon carbide (SiC) have recently been explored to locally cool micro-scale power electronics that are prone to on-chip hot spot generation. Analytical and finite element modeling shows that SiC-based microchannels used for localized cooling should have high aspect ratio features (above 8:1) to obtain heat transfer coefficients (300 to 600 kW/m2·K) required to obtain gallium nitride (GaN) device channel temperatures below 100°C. This work presents experimental results of microfabricating high aspect ratio microchannels in a 4H-SiC substrate using inductively coupled plasma (ICP) etching. Depths of 90 μm and 80 μm were achieved with a 5:1 and 12:1 aspect ratio, respectively. This microfabrication process will enable the integration of microchannels (backside features) with high-power density devices such as GaN-on-SiC based electronics, as well as other SiC-based microfluidic applications.

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