Ion Beam Deposition of Boron-Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
J.H. Edgar ◽  
C.R. Eddy ◽  
J.A. Sprague ◽  
B.D. Sartwell
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Electron Spectroscopy ◽  
Boron Content ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Ion Beam Assisted Deposition ◽  
Beam Deposition

AbstractAnalysis of the phase behavior, structure, and composition of aluminum nitride thin films with up to 22% boron prepared by ion-beam assisted deposition is presented. the c-lattice constant of the film decreased with increasing boron content as expected from the formation of an aIN - wurtzite BN alloy. there was no evidence for separate boron nitride precipitation from either X-ray diffraction or FTIR. IN contrast, auger electron spectroscopy of the boron present in the films suggested that two types of boron bonding was present.

Ion Beam Deposition of Epitaxial Silicon Films

1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey
Keyword(s):  
Ion Beam ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Silane Plasma ◽  
Beam Deposition

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

Ion Beam Deposition of Calcium Hydroxyapatite

1987 ◽  
Vol 110 ◽  
Author(s):  
B. L. Barthell ◽  
T. A. Archuleta ◽  
Ram Kossowsky
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Calcium Hydroxyapatite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Testing ◽  
Ion Beam Deposition ◽  
Argon Ion ◽  
Scanning Electron ◽  
Beam Deposition

AbstractCalcium hydroxyapatite has been sputtered on glass and Ti-6Al-4V substrates using a 1.5-kV argon ion beam. The films have been examined by x-ray diffraction analysis, energy dispersive spectroscopy, scanning electron microscopy, and adhesion testing. Results of this experimentation are presented.

scholarly journals Структурные особенности текстурированных пленок оксида цинка, полученных методом ионного распыления

2021 ◽  
Vol 55 (3) ◽  
pp. 230
Author(s):  
В.Г. Костишин ◽  
А.Ю. Миронович ◽  
А.В. Тимофеев ◽  
И.М. Исаев ◽  
Р.И. Шакирзянов ◽  
...  
Keyword(s):  
Ion Beam ◽  
Temperature Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Polycrystalline Structure ◽  
Initial State ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Diffraction Patterns ◽  
Beam Deposition

In this work, we studied textured ZnO films obtained by ion-beam deposition. X-ray diffraction patterns and micrographs of the surface revealed that asdeposited films have a polycrystalline structure. It was found that, after annealing of the samples in the temperature range from 200 ° C to 500 °, recrystallization occurs, leading to a change in the grain size and surface roughness. The dependence of the initial state of the film on the recrystallization intensity is also demonstrated. In films with an initially more perfect structure, temperature treatment at 500 ° C led to grain growth by more than 2 times and a decrease in roughness by ~ 40%.

Epitaxial Planarization Using Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
Bertha P. Chang ◽  
Neville Sonnenberg ◽  
Paul C. McIntyre ◽  
Michael J. Cima ◽  
Jonathan Z. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Pole Figure ◽  
Ion Beam ◽  
Normal Incidence ◽  
X Ray Diffraction ◽  
Deposition Rates ◽  
Atom Ratio ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Beam Parameters

ABSTRACTCeO2 thin films have been deposited on patterned (100) LaAlO3 substrates using ion beam assisted deposition (IBAD) with ion beam energies between 350 and 500eV. Deposition temperatures were varied between 400°C and 600°C and deposition rates from 0.2Å/s to 1.2Å/s. Both normal and off-normal incidence ion bombardment have been studied. A trend towards planarization is observed when the ion to atom ratio is adjusted to obtain the proper degree of etching. The planarization mechanism for normal incidence bombardment appears to be similar to that previously observed for bias sputtering. X-ray diffraction shows that an initial layer of evaporated epitaxial CeO2 is required for continued epitaxial development during IBAD processing. The extent of planarization via off-normal ion incidence can be related to the direction of the ion beam with respect to the patterned features. X-ray pole figure measurements show that these films possess an in-plane orientation that is directly related to the ion beam parameters.

Characterization of titanium-aluminum nitride thin films by ion beam techniques and X-ray diffraction

Vacuum ◽  
1994 ◽  
Vol 45 (4) ◽  
pp. 441-446 ◽  
Author(s):  
FC Stedile ◽  
FL Freire ◽  
WH Schreiner ◽  
IJR Baumvol
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride

Reactive ion beam deposition of aluminum nitride thin films

1985 ◽  
Vol 14 (4) ◽  
pp. 405-418 ◽  
Author(s):  
S. Bhat ◽  
S. Ashok ◽  
S. J. Fonash ◽  
L. Tongson}
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Beam Deposition

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Charge Assisted Deposition of Polycrystalline Silicon Thin Films by Cesium Sputter Ion Beam Deposition

2004 ◽  
Vol 43 (10) ◽  
pp. 6880-6883 ◽  
Author(s):  
Deuk Yeon Lee ◽  
Yong Hwan Kim ◽  
In Kyo Kim ◽  
Dong Joon Choi ◽  
Soon Moon Jeong ◽  
...  
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Ion Beam Deposition ◽  
Silicon Thin Films ◽  
Beam Deposition
Sign in / Sign up

Export Citation Format

Share Document