In-Line Temperature Monitoring of Rapid Thermal Annealing Processes

1995 ◽  
Vol 387 ◽  
Author(s):  
Minseok Oh ◽  
Binh Nguyenphu ◽  
Anthony T. Fiory

AbstractProcess control for rapid thermal annealing (RTA) steps in silicon integrated circuit manufacturing is highly dependent on the repeatability of wafer annealing temperatures. The heating lamps in RTA ovens are controlled by an infrared pyrometer in a feedback-control loop. Methods currently in production allow some variability in annealing temperature, owing to the variability of wafer backside emissivities and the fixed emissivity value used for each process recipe. To provide an independent in-situ temperature sensor with potentially improved accuracy, an RTA oven equipped with a ripple pyrometer was used for passive data collection. Results obtained over extensive wafer processing indicate that the ripple temperatures have a correlation with electrical tester data and that the ripple pyrometer repeatability is better than 3°C at 1 standard deviation.

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.


1996 ◽  
Vol 429 ◽  
Author(s):  
Binh Nguyenphu ◽  
Minseok Oh ◽  
Anthony T. Fiory

AbstractCurrent trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.


2000 ◽  
Vol 76 (18) ◽  
pp. 2538-2540 ◽  
Author(s):  
Byung Hak Lee ◽  
Kee Sun Lee ◽  
Dong Kyun Sohn ◽  
Jeong Soo Byun ◽  
Chang Hee Han ◽  
...  

1997 ◽  
Vol 18 (11) ◽  
pp. 526-528 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee

2014 ◽  
Vol 59 (5) ◽  
pp. 711-715 ◽  
Author(s):  
E. A. Bogoyavlenskaya ◽  
V. I. Rudakov ◽  
Yu. I. Denisenko ◽  
V. V. Naumov ◽  
A. E. Rogozhin

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