XPS, AES and Leed Studies of The Interaction Between The Si(100) 2×1 Surface and Cadmium Deposited at Room Temperature

1995 ◽  
Vol 382 ◽  
Author(s):  
S. Santucci ◽  
S. Di Nardo ◽  
L. Lozzi ◽  
M. Passacantando ◽  
P. Picozzi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Early Stage ◽  
High Vacuum ◽  
Amorphous Structure ◽  
Ultra High Vacuum ◽  
Energy Position ◽  
X Ray

ABSTRACTVery thin films of cadmium, with a mean thickness between 1 Å and 500 Å, were deposited by thermal evaporation in ultra-high-vacuum on a Si(100) 2×1 surface held at room temperature. In situ X-ray Photoelectron Spectroscopy and Auger Electron Spectroscopy were performed in order to investigate the interaction between the silicon substrate and the deposited cadmium. In samples with deposited mean thickness up to 3 Å, cadmium and silicon are found to be strongly interacting. In fact both XPS and AES spectra show evident changes in shape and energy position leading to the conclusion that a chemical compound between Cd and Si is formed. No diffusion between cadmium and silicon is observed, so the cadmium atoms deposited after the first 3 Å show a bulk character. The analysis of the first derivative intensity of the Si L23VV and Cd M5N45N45 Auger signals, varying the amount of deposited Cd, indicates the formation of islands in the early stage of the Cd growth. These islands show an amorphous structure as observed by using the LEED spectroscopy.

Electron induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5, a potential heterobimetallic precursor for focused electron beam induced deposition (FEBID)

2018 ◽  
Vol 20 (11) ◽  
pp. 7862-7874 ◽  
Author(s):  
Ilyas Unlu ◽  
Julie A. Spencer ◽  
Kelsea R. Johnson ◽  
Rachel M. Thorman ◽  
Oddur Ingólfsson ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Electron Beam ◽  
Photoelectron Spectroscopy ◽  
Surface Reactions ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray ◽  
Electron Beam Induced Deposition

Electron-induced surface reactions of (η5-C5H5)Fe(CO)2Mn(CO)5were exploredin situunder ultra-high vacuum conditions using X-ray photoelectron spectroscopy and mass spectrometry.

UHV Preparation and In-Situ Surface Analysis of MNFE/Nife Exchange Structures: Interfacial Impurity Incorporation

1993 ◽  
Vol 313 ◽  
Author(s):  
Susan L. Cohen ◽  
John M. Baker ◽  
Michael A. Russak ◽  
Gerald J. Scilla ◽  
Cherngye Hwang ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Photoelectron Spectroscopy ◽  
Exchange Coupling ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Impurity Incorporation ◽  
X Ray ◽  
Manufacturing Applications ◽  
Analysis System

ABSTRACTMnFe/NiFe exchange structures have been prepared in an ultra-high vacuum sputtering/surface analysis system. Controlled introduction of residual gas impurities such as O2 and H2O at the MnFe/NiFe interface is studied by in-situ x-ray photoelectron spectroscopy (XPS) and the exchange structures are magnetically characterized. Due to the extreme reactivity of the NiFe surface towards O2, the exchange coupling is severely degraded by only small exposures of this molecule to the NiFe surface. In contrast, H2O does not oxidize the NiFe surface and therefore can be tolerated in greater quantities in the sputtering chamber without detrimental loss of exchange. This understanding of the basic surface chemistry of the MnFe and NiFe surfaces can lead to improved sputtering practices in actual manufacturing applications.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

GROWTH OF OXIDE LAYER ON GERMANIUM (011) SUBSTRATE UNDER DRY AND WET ATMOSPHERES

1999 ◽  
Vol 06 (06) ◽  
pp. 1053-1060 ◽  
Author(s):  
N. TABET ◽  
J. AL-SADAH ◽  
M. SALIM
Keyword(s):  
Simple Model ◽  
Oxide Film ◽  
Growth Kinetics ◽  
Photoelectron Spectroscopy ◽  
Early Stage ◽  
X Ray ◽  
Apparent Thickness ◽  
Different Temperatures ◽  
Kinetics Of

X-ray Photoelectron Spectroscopy (XPS) has been used to investigate the oxidation of (011) Ge substrates. The sample surfaces were CP4-etched, then annealed in situ, at different temperatures, for various durations. Dry and wet atmospheres were used. The oxidation rate during the early stage was increased by the presence of moisture in the atmosphere. A simple model was used to define and determine an apparent thickness of the oxide film from XPS measurements. The time dependence of the apparent thickness is consistent with a partial coverage of the surface by oxide islands. The growth kinetics of the oxide islands obeys a nearly cubic law.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

scholarly journals Characterization of Ti/SnO2 Interface by X-ray Photoelectron Spectroscopy

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Interaction ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Increasing Trend ◽  
Substrate Temperatures ◽  
Beam Technique

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.

scholarly journals The Determination of Interfacial Structure and Phase Transitions in Al/Cu and Al/Ni Interfaces by Means of Surface Extended X-Ray Absorption Fine Structure

1991 ◽  
Vol 238 ◽  
Author(s):  
E. V. Barrera ◽  
S. M. Heald
Keyword(s):  
Fine Structure ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Interfacial Structure ◽  
Reaction Products ◽  
X Ray ◽  
Absorption Fine ◽  
Reaction Zones ◽  
X Ray Absorption

ABSTRACTSurface extended x-ray absorption fine structure (SEXAFS) was used to investigate the interfacial conditions of Al/Cu and Al/Ni shallow buried interfaces. Previous studies using glancing angle extended x-ray absorption fine structure, x-ray reflectivity, photoemission, and SEXAFS produced conflicting results as to whether or not the interfaces between Al and Cu and Al and Ni were reacted upon room temperature deposition. In this study polycrystalline bilayers of Al/Cu and Al/Ni and trilayers of Al/Cu/Al and Al/Ni/Al were deposited on tantalum foil at room temperature in ultra high vacuum and analyzed to evaluate the reactivity of these systems on a nanometer scale. It became overwhelming apparent that the interfacial phase reactions were a function of the vacuum conditions. Samples deposited with the optimum vacuum conditions showed reaction products upon deposition at room temperature which were characterized by comparisons to standards and by least squares fitting to be CuAl2 and NiAl3 respectively. The results of this study showed that the reacted zone thicknesses were readily dependent on the deposition parameters. For both Al on Cu and Al on Ni as well as the metal on Al conditions 10A reaction zones were observed. These reaction zones were smaller than that observed for bilayers of Al on Cu (30Å) and Al on Ni (60Å) where deposition rates were much higher and samples were much thicker. The reaction species are evident by SEXAFS, where the previous photoemission studies only indicated that changes had occurred. Improved vacuum conditions as compared to the earlier experiments is primarily the reason reactions on deposition were seen in this study as compared to the earlier SEXAFS studies.

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