Dielectric Properties Of Low Dielectric Constant Polymeric Materials

1995 ◽  
Vol 381 ◽  
Author(s):  
Flora S. Ip ◽  
Chiu Ting
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Performance ◽  
Metal Layer ◽  
Polymeric Materials ◽  
Signal Propagation ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Wide Range ◽  
Metal Insulator Metal

AbstractMultilevel interconnects for high performance ULSI need low dielectric constant materials for inter-metal layer dielectric, or ILD, to reduce signal propagation delay, power consumption and cross talk noises. We have studied the physical, dielectric and processing properties of a wide variety of promising low dielectric polymeric materials for ILD applications. This paper presents capacitance values measured over a wide range of temperature, and a summary of the measured dielectric properties. The anisotropy 1,2 of dielectric properties were determined experimentally, the vertical (out-of-plane) dielectric properties were determined by MIM (Metal-Insulator-Metal) measurements, and the horizontal (in-plane) dielectric properties were determined by intra-line measurements of sub-half micron serpentine and comb test structures.

Novel soluble polyimides containing pyridine and fluorinated units: preparation, characterization, and optical and dielectric properties

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21662-21671 ◽  
Author(s):  
Weibing Dong ◽  
Yue Guan ◽  
Dejing Shang
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
Dielectric Properties ◽  
Low Dielectric Constant ◽  
Mechanical And Thermal Properties ◽  
Polyimide Films ◽  
Low Dielectric

To acquire low dielectric constant polyimide films with good mechanical and thermal properties and low CTE applied in microelectronic fields, three novel polyimides containing pyridine and –C(CF3)2– groups were firstly designed and synthesized.

Preparation and Properties of Porous Si3N4/SiO2/BN Composite Ceramics

2012 ◽  
Vol 512-515 ◽  
pp. 828-831 ◽  
Author(s):  
Wei Dong ◽  
Chang An Wang ◽  
Lei Yu ◽  
Shi Xi Ouyang
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
High Strength ◽  
Low Dielectric Constant ◽  
Pressureless Sintering ◽  
Composite Ceramics ◽  
Porous Si ◽  
Low Dielectric ◽  
Dry Pressing ◽  
Porous Si3n4

Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at 1750°C for 1.5 h in flow nitrogen. The influences of BN content on microstructure, porosity, mechanical and dielectric properties of the porous Si3N4/SiO2/BN composite ceramics were discussed. The results showed that the porous Si3N4/SiO2/BN composite ceramics with porosity ranging from 29% to 48% were fabricated by adjusting the content of BN. The flexural strength of the porous Si3N4/SiO2/BN composite ceramics was 78215 MPa. The dielectric constant of the porous Si3N4/SiO2/BN composite ceramics was 3.9~5 at 1 MHz.

Photosensitive Polyimide having low loss tangent for RF application

2018 ◽  
Vol 2018 (1) ◽  
pp. 000476-000482 ◽  
Author(s):  
Masao Tomikawa ◽  
Hitoshi Araki ◽  
Yohei Kiuchi ◽  
Akira Shimada
Keyword(s):  
Molecular Structure ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
High Frequency ◽  
Low Dielectric Constant ◽  
Low Loss ◽  
Elongation At Break ◽  
Low Dielectric ◽  
The Poor

Abstract Progress of 5G telecommunication and mm radar for autopilot, high frequency operation is required. Insulator materials having low loss at high frequency is desired for the applications. We designed the low dielectric constant, and low dielectric loss materials examined molecular structure of the polyimide and found that permittivity 2.6 at 20GHz, dielectric loss 0.002. Furthermore, in consideration of mechanical properties such as the toughness and adhesion to copper from a point of practical use. Dielectric properties largely turned worse when giving photosensitivity. To overcome the poor dielectric properties, we designed the photosensitive system. After all, we successfully obtained 3.5 of dielectric constant and 0.004 of dielectric loss, and 100% of elongation at break. In addition, we offered a B stage sheet as well as varnish. These materials are applicable to re-distribution layer of FO-WLP, Interposer and other RF applications for microelectronics.

Outstanding dielectric and thermal properties of main chain-type poly(benzoxazine-co-imide-co-siloxane)-based cross-linked networks

2019 ◽  
Vol 10 (19) ◽  
pp. 2387-2396 ◽  
Author(s):  
Kan Zhang ◽  
Xinye Yu ◽  
Shiao-Wei Kuo
Keyword(s):  
Dielectric Constant ◽  
Thermal Properties ◽  
High Performance ◽  
Main Chain ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Chain Type ◽  
Dielectric And Thermal Properties

A high performance cross-linked polymer with a very low dielectric constant was achieved via a newly designed main-chain type poly(benzoxazine-co-imide-co-siloxane).

Adhesion and Dielectric Strength of Ultra-Low Dielectric Constant PTFE Thin Films

1997 ◽  
Vol 476 ◽  
Author(s):  
C.T. Rosenmaver ◽  
J. W. Bartz ◽  
J. Hammes
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Strength ◽  
Low Dielectric Constant ◽  
Thermal Treatments ◽  
Test Results ◽  
Low Dielectric ◽  
Metal Insulator Metal ◽  
Thickness Standard ◽  
High Dielectric

AbstractPrevious work has demonstrated the potential of polytetrafluoroethylene (PTFE) thin films for ULSI applications. The films are deposited from PTFE nanoemulsions. They have an ultra-low dielectric constant of 1.7 to 2.0, a leakage current of less than 1.0 nA/cm2 @ 0.2 MV/cm and a dielectric strength of from 0.5 to 2.4 MV/cm. They are thermally stable (isothermal weight loss < 1.0 %/hr at 450 °C), uniform (thickness standard deviation < 2%), and have excellent gap-fill properties (viscosity of 1.55 cP and surface tension of 18 mN/m). The films are inert with respect to all known semiconductor process chemicals, yet they are easily etched in an oxygen plasma.This paper discusses the processing technology that has been developed to process PTFE films with these properties. Specifically, it addresses two recent discoveries: 1) Good adhesion of spin-coated PTFE to SiO2 surfaces; and 2) high dielectric strength of PTFE thin films spin-coat deposited onto rigid substrates. The adhesion-promoting and thermal treatments necessary to produce these properties are detailed. Stud pull test results and test results from metal-insulator-metal (MIM) capacitor structures are given.

High-performance fluorinated polyimide/pure silica zeolite nanocrystal hybrid films with a low dielectric constant

RSC Advances ◽  
2015 ◽  
Vol 5 (93) ◽  
pp. 76476-76482 ◽  
Author(s):  
Zhenxun Huang ◽  
Shumei Liu ◽  
Yanchao Yuan ◽  
Jianqing Zhao
Keyword(s):  
Dielectric Constant ◽  
High Performance ◽  
Low Dielectric Constant ◽  
Hybrid Films ◽  
Low Dielectric ◽  
Simple Strategy ◽  
Pure Silica ◽  
Fluorinated Polyimide ◽  
Enhanced Properties

A simple strategy for preparing the low-κ FPI hybrids with enhanced properties.

Dielectric Properties of Sol - Gel Silica Glasses

1986 ◽  
Vol 72 ◽  
Author(s):  
G. V. Chandrashekhar ◽  
M. W. Shafer
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Elemental Carbon ◽  
Sol Gel ◽  
Fused Silica ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Silica Glasses ◽  
Low Dielectric ◽  
Gel Technique

AbstractDielectric properties have been measured for a series of porous and fully densified silica glasses, prepared by the sol-gel technique starting from Si-methoxide or Si-fume. The results for the partially densified glasses do not show any preferred orientation for porosity. When fully densified (˜2.25 gms/cc) without any prior treatment of the gels, they have dielectric constants of ≥ 6.5 and loss factors of 0.002 at 1 MHz, compared to values of 3.8 and <0.001 for commercial fused silica. There is no corresponding anomaly in the d.c. resistivity. Elemental carbon present to the extent of 400–500 ppm is likely to be the main cause for this enhanced dielectric constant. Extensive cleaning of the gels prior to densification to remove this carbon were not completely successful pointing to the difficulty in preparing high purity, low dielectric constant glasses via the organic sol-gel route at least in the bulk form.

31.2: Low Dielectric Constant Materials for High Performance LCDs

2015 ◽  
Vol 46 (1) ◽  
pp. 450-453
Author(s):  
Haiwei Chen ◽  
Fenglin Peng ◽  
Shin-Tson Wu ◽  
Minggang Hu ◽  
Jian Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
High Performance ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Low Dielectric Constant Materials

Characterization of Spin -on Glasses by Microindentation.

1998 ◽  
Vol 511 ◽  
Author(s):  
Eva E. Simonyi ◽  
K.-W. Lee ◽  
Robert F. Cook ◽  
Eric G. Liniger ◽  
James Speidell
Keyword(s):  
Dielectric Constant ◽  
Life Expectancy ◽  
Polymeric Materials ◽  
Curing Temperature ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Bond Density ◽  
Microelectronics Industry ◽  
Preparation Parameter

ABSTRACTSpin-on glasses are candidates in the microelectronics industry as low dielectric constant insulating layers. Spin-on glasses are very brittle materials. This paper discusses measurement problems as relevant to the characterization of a brittle material by the indentation technique. As for all polymeric materials curing temperature is the most important preparation parameter. There is a correlation between hardness, Young's modulus, the onset of cracking with curing temperature. This dependence on curing temperature is also expressed by the change in Si-H bond density as shown by FTIR data. Life expectancy or aging characteristics were also investigated for these features. As an example results on silsesquioxane spin -on glasses are presented.

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