scholarly journals Applications of Optical Emission Spectroscopy to Semiconductor Processing

1984 ◽  
Vol 38 ◽  
Author(s):  
John G. Shabushnig ◽  
Paul R. Demko ◽  
Richard N. Savage
Keyword(s):  
Plasma Etching ◽  
Integrated Circuit ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
State Of The Art ◽  
Semiconductor Devices ◽  
Optical Emission ◽  
Semiconductor Processing ◽  
Integrated Circuit Fabrication ◽  
Circuit Fabrication

AbstractOptical emission spectroscopy (OES) has proven to be a valuable tool in the development and production of state-of-the-art semiconductor devices. Application to the plasma etching of a variety of materials necessary for integrated circuit fabrication is discussed, with particular emphasis placed on etch endpoint analysis. The utility of OES techniques in monitoring photolithographic processes is also presented.

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

State-of-the-Art Evaluation of Ultra-Clean Ulsi Processes

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Fischer-Colbrie ◽  
S. S. Laderman ◽  
S. Brennan ◽  
S. Ghosh ◽  
N. Takaura ◽  
...  
Keyword(s):  
Detection Limit ◽  
Integrated Circuit ◽  
Recent Progress ◽  
State Of The Art ◽  
Total Reflection ◽  
X Ray ◽  
Integrated Circuit Fabrication ◽  
Counting Time ◽  
Circuit Fabrication ◽  
Wafer Surfaces

ABSTRACTThis work describes recent progress in implementation and applications of synchrotron radiation total reflection x-ray fluorescence (SR-TXRF) to measure trace metals on wafer surfaces. To date, we have achieved state-of-the-art transition metal sensitivity of 3×108 atoms/cm2 (˜3fg) for 1000 sec. counting time for impurities which have an monolayer-like distribution on the surface and <1fg for droplet-like impurities. Recent instrumentation breakthroughs include reduction of detector parasitic backgrounds (particularly Cu) to below our present detection limit, 150 and 200mm whole-wafer handling, wafer-mapping capability and a cleanroom mini-environment. With these upgrades, measurements were made of wafers from various steps in the integrated circuit fabrication process. These results demonstrate that synchtron radiation brings TXRF into a new and useful regime. Further developments are underway to increase throughput and access for broader application.

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