Formation of Amorphous Interlayers by Solid–State Diffusion in Ti Thin Films on Si–ge Layers on Silicon and Germanium

1995 ◽  
Vol 379 ◽  
Author(s):  
J.B. Lai ◽  
C.S. Liu ◽  
L.J. Chen ◽  
J.Y. Cheng
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
The Other ◽  
Solid State Diffusion ◽  
Formation Temperature ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicon And Germanium

ABSTRACTThe formation of amorphous interlayers (a–interlayers) by solid–state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin film on germanium and Sil-xGex alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy.Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as–deposited samples. The growth of a–interlayers was found to vary non–monotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with that of the Ti/Si system. The formation mechanism are discussed in terms of thermodynamic and kinetic factors.

Growth Kinetics Of SiO2 On (001)Si Catalyzed By Cu3Si At Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
H. Y. Huang ◽  
L. J. Chen
Keyword(s):  
Growth Rate ◽  
Growth Kinetics ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Linear Growth ◽  
Elevated Temperatures ◽  
The Other ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Kinetics Of

AbstractThe oxidation of Si catalyzed by 170-nm-thick Cu3Si at elevated temperatures has been investigated by transmission electron microscopy and Auger electron spectroscopy. For wet oxidation at 140–180 °C, the growth rate of the oxide layer was increased with the temperature. On the other hand, as the temperature was increased above 200 °C, the growth rate slowed down. The growth kinetics of oxide was investigated. Controlling mechanisms for the growth of oxide owing to the grain growth of Cu3Si are discussed. The activation energy for the linear growth of oxide was measured to be 0. 19 ± 0.1 eV.

Formation of Amorphous Interlayers by Solid-State Diffusion in Refractory Metal/Silicon Systems

1990 ◽  
Vol 187 ◽  
Author(s):  
J.Y. Cheng ◽  
M.H. Wang ◽  
L.J. Chen
Keyword(s):  
Solid State ◽  
Linear Growth ◽  
Energy Difference ◽  
Heat Of Formation ◽  
Solid State Diffusion ◽  
Free Energy Difference ◽  
Atomic Size ◽  
Transmission Electron ◽  
State Diffusion ◽  
Interface Structures

AbstractFormation and growth of amorphous interlayers (a-interlayers) in nine refractroy metal and silicon systems by solid-state diffusion have been investigated by conventional and high resolution transmission electron microscopy. The amorphous interlayers were found to form in samples annealed at 350–650 °C. The growth was found to follow a linear growth law initially then slow down until a critical thicknees was reached. The interface structures were examined. The correlations among difference in atomic size between metal and Si atoms, growth rate and activation energy of the linear growth, critical and maximum a-interlayer thickness, the largest heat of formation energy for crystalline silicides, the calculated free energy difference in forming amorphous phase as well as atomic mobility in refractroy metal/silicon systems are discussed.

Exafs Studies of Grain Boundary Diffusion and Segregation

1986 ◽  
Vol 77 ◽  
Author(s):  
S. M. Heald ◽  
H. Chen ◽  
J. M. Tranquada
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Structural Information ◽  
Solid State Diffusion ◽  
Interface Reactions ◽  
Tin Bronze ◽  
State Diffusion

ABSTRACTThe dominant pathway for thin film interdiffusion and interface reactions is often via grain boundaries. We have made EXAFS measurements of grain boundary constituents for two systems: interdiffusion in Ag-Au bilay-ers and solid state reaction of Nb with a copper-tin bronze to form Nb3Sn. The Ag-Au results indicate that Au in saturated Ag grain boundaries has an environment similar to a dilute Au in Ag solution with reduced coordination. For the Nb-bronze reaction, the results for the Cu environment indicate distinct changes in the grain boundary environment when small amounts of Ti, Hf, Zr, and Ta are added to the starting Nb. Both results demonstrate the ability of EXAFS to probe grain boundary environments, and to provide important structural information in understanding solid state diffusion and interdiffusion in thin film systems.

scholarly journals In-situ transmission electron microscopy determination of solid-state diffusion in the aluminum-nickel system

2019 ◽  
Vol 276 ◽  
pp. 114-121
Author(s):  
Joshua M. Pauls ◽  
Christopher E. Shuck ◽  
Arda Genç ◽  
Sergei Rouvimov ◽  
Alexander S. Mukasyan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Solid State Diffusion ◽  
Transmission Electron ◽  
State Diffusion

Solid-State Reactions of a 3D-Transition Metal-Ti/Al2O3 System

1993 ◽  
Vol 318 ◽  
Author(s):  
Seiichi Suenaga ◽  
Miho Koyama ◽  
Shinji Arai ◽  
Masako Nakahashi
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Transition Metal ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Intermediate Phase ◽  
Solid State Reactions ◽  
Bilayer Film ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTAn interfacial mechanism for reactions between a Me-Ti thin film (Me=3d transition metals; Cu,Ni) and an A12O3 substrate is newly proposed. It has been clarified that Me3Ti3O (diamond cubic of Fd3m), which is formed as an intermediate phase in both the Cu-Ti/Al2O3 and Ni-Ti/Al2O3 systems, is responsible for the bonding between Me and A12O3. The solid-state reactions of the Me-Ti bilayer film/Al2O3 system were studied with Auger electron spectroscopy (AES) and X-ray diffraction (XRD) to clarify the interfacial reaction between Me-Ti and the A12O3 substrate. Me3Ti3O was observed at the interface between A12O3 and Me after annealing. Me3Ti3O was formed by oxidation of the Me-Ti compounds. The oxygen which reacted with the Me-Ti compounds has been found to be generated from the reduction of the A12O3 substrate.

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