Pattern evolution due to energetic solid-state diffusion front in nanoscale thin film

2008 ◽  
Vol 92 (14) ◽  
pp. 141914 ◽  
Author(s):  
Deeder Aurongzeb
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Diffusion ◽  
Diffusion Front ◽  
State Diffusion ◽  
Nanoscale Thin Film

Exafs Studies of Grain Boundary Diffusion and Segregation

1986 ◽  
Vol 77 ◽  
Author(s):  
S. M. Heald ◽  
H. Chen ◽  
J. M. Tranquada
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Structural Information ◽  
Solid State Diffusion ◽  
Interface Reactions ◽  
Tin Bronze ◽  
State Diffusion

ABSTRACTThe dominant pathway for thin film interdiffusion and interface reactions is often via grain boundaries. We have made EXAFS measurements of grain boundary constituents for two systems: interdiffusion in Ag-Au bilay-ers and solid state reaction of Nb with a copper-tin bronze to form Nb3Sn. The Ag-Au results indicate that Au in saturated Ag grain boundaries has an environment similar to a dilute Au in Ag solution with reduced coordination. For the Nb-bronze reaction, the results for the Cu environment indicate distinct changes in the grain boundary environment when small amounts of Ti, Hf, Zr, and Ta are added to the starting Nb. Both results demonstrate the ability of EXAFS to probe grain boundary environments, and to provide important structural information in understanding solid state diffusion and interdiffusion in thin film systems.

Formation of Amorphous Interlayers by Solid–State Diffusion in Ti Thin Films on Si–ge Layers on Silicon and Germanium

1995 ◽  
Vol 379 ◽  
Author(s):  
J.B. Lai ◽  
C.S. Liu ◽  
L.J. Chen ◽  
J.Y. Cheng
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
The Other ◽  
Solid State Diffusion ◽  
Formation Temperature ◽  
Transmission Electron ◽  
State Diffusion ◽  
Silicon And Germanium

ABSTRACTThe formation of amorphous interlayers (a–interlayers) by solid–state diffusion in ultrahigh vacuum deposited polycrystalline Ti thin film on germanium and Sil-xGex alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy.Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as–deposited samples. The growth of a–interlayers was found to vary non–monotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with that of the Ti/Si system. The formation mechanism are discussed in terms of thermodynamic and kinetic factors.

Joining of Ti3SiC2 with Ti–6Al–4V Alloy

2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto
Keyword(s):  
Solid State ◽  
Rate Constant ◽  
Liquid State ◽  
Parabolic Rate Constant ◽  
Diffusion Path ◽  
Solid State Diffusion ◽  
Diffusion Controlled ◽  
State Diffusion ◽  
Rate Controlled ◽  
Higher Temperature

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.

Investigation of the diffusion behavior in Sn-xAg-yCu/Cu solid state diffusion couples

2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans
Keyword(s):  
Solid State ◽  
Solid State Diffusion ◽  
Diffusion Couples ◽  
Diffusion Behavior ◽  
State Diffusion
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