Challenges for Sige-Heterotechnology

1995 ◽  
Vol 379 ◽  
Author(s):  
H. Presting
Keyword(s):  
Silicon Germanium ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Material System ◽  
Sige Hbt ◽  
Monolithically Integrated ◽  
Infrared Spectral ◽  
Frequency Regime ◽  
Heterostructure Devices

ABSTRACTHeterostructure devices composed of silicon, silicon-germanium or germanium layers have substantially broadened the spectrum of the well established Si microelectronics. The achieved results for devices, such as the SiGe base heterobipolar transistor (SiGe HBT), the n-. and p-channel SiGe modulation doped field effect transistor (SiGe MODFET) and optoelectronic devices (SiGe LED and photodiode) point to the outstanding potential of this novel heterosystem. Today the SiGe HBT is the world fastest Si based transistor with a wide application area from conventional microelectronic applications to microwave power generation in a frequency regime where up to now only III-V semiconductor devices have prevailed. In addition novel SiGe optoelectronic devices, such as SiGe LED and Si/Ge photodetector in the near infrared spectral region (1.3µ) could pave the way for Si based optical interconnect devices monolithically integrated on a Si IC chip (chip to chip coupling). Growth aspects, strain effects, band alignment and novel bandstructure effects in this material system will be reviewed, its effect on the device performance will be discussed.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals Optical Constants of Chemical Vapor Deposited Graphene for Photonic Applications

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1230
Author(s):  
Marwa A. El-Sayed ◽  
Georgy A. Ermolaev ◽  
Kirill V. Voronin ◽  
Roman I. Romanov ◽  
Gleb I. Tselikov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optical Constants ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Multilayer Graphene ◽  
Practical Applications ◽  
Chemical Vapor Deposited ◽  
Infrared Spectral ◽  
Spectral Ranges

Graphene is a promising building block material for developing novel photonic and optoelectronic devices. Here, we report a comprehensive experimental study of chemical-vapor deposited (CVD) monolayer graphene’s optical properties on three different substrates for ultraviolet, visible, and near-infrared spectral ranges (from 240 to 1000 nm). Importantly, our ellipsometric measurements are free from the assumptions of additional nanometer-thick layers of water or other media. This issue is critical for practical applications since otherwise, these additional layers must be included in the design models of various graphene photonic, plasmonic, and optoelectronic devices. We observe a slight difference (not exceeding 5%) in the optical constants of graphene on different substrates. Further, the optical constants reported here are very close to those of graphite, which hints on their applicability to multilayer graphene structures. This work provides reliable data on monolayer graphene’s optical properties, which should be useful for modeling and designing photonic devices with graphene.

Experimental Investigation of Thin Film InGaAsP Coolers

2000 ◽  
Vol 626 ◽  
Author(s):  
Christopher J. LaBounty ◽  
Ali Shakouri ◽  
Gerry Robinson ◽  
Luis Esparza ◽  
Patrick Abraham ◽  
...  
Keyword(s):  
Thin Film ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Thermionic Emission ◽  
Optical Power ◽  
Peltier Effect ◽  
Material System ◽  
Monolithically Integrated ◽  
Cooling Behavior ◽  
Superlattice Structures

ABSTRACTMost optoelectronic devices for long haul optical communications are based on the InP/InGaAsP family of materials. Thin film coolers based on the same material system can be monolithically integrated with optoelectronic devices such as lasers, switches, and photodetectors to control precisely the device characteristics such as wavelength and optical power. Superlattice structures of InGaAs/InP and InGaAs/InGaAsP are used to optimize the thermionic emission resulting in a cooling behavior beyond what is possible with only the Peltier effect. A careful experimental study of these coolers is undertaken. Mesa sizes, superlattice thickness, and ambient temperature are all varied to determine their effect on cooling performance. A three-dimensional, self-consistent thermal-electric simulation and an effective one-dimensional model are used to understand the experimental observations and to predict what will occur for other untested parameters. The packaging of the coolers is also determined to have consequences in the overall device performance. Cooling on the order of 1 to 2.3 degrees over 1-micron thick barriers is reported.

Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

2010 ◽  
Author(s):  
Fred Semendy ◽  
Patrick Taylor ◽  
Gregory Meissner ◽  
Priyalal Wijewarnasuriya
Keyword(s):  
Silicon Germanium ◽  
Near Infrared ◽  
Black Silicon ◽  
Optical Applications

Metastructures for the Giant Enhancement of Raman Scattering in the Near Infrared Spectral Range

JETP Letters ◽  
2020 ◽  
Vol 112 (1) ◽  
pp. 31-36
Author(s):  
V. I. Kukushkin ◽  
V. E. Kirpichev ◽  
E. N. Morozova ◽  
V. V. Solov’ev ◽  
Ya. V. Fedotova ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Spectral Range ◽  
Near Infrared ◽  
Infrared Spectral Range ◽  
Infrared Spectral

scholarly journals ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1011
Author(s):  
Dimitre Z. Dimitrov ◽  
Zih Fan Chen ◽  
Vera Marinova ◽  
Dimitrina Petrova ◽  
Chih Yao Ho ◽  
...  
Keyword(s):  
Near Infrared ◽  
Atomic Layer ◽  
Optical Transmittance ◽  
Force Microscopy ◽  
Flexible Polymer ◽  
Layer Deposition ◽  
Polymer Dispersed ◽  
Muscovite Mica ◽  
Infrared Spectral ◽  
Continuous Bending

In this work, highly conductive Al-doped ZnO (AZO) films are deposited on transparent and flexible muscovite mica substrates by using the atomic layer deposition (ALD) technique. AZO-mica structures possess high optical transmittance at visible and near-infrared spectral range and retain low electric resistivity, even after continuous bending of up to 800 cycles. Structure performances after bending tests have been supported by atomic force microscopy (AFM) analysis. Based on performed optical and electrical characterizations AZO films on mica are implemented as transparent conductive electrodes in flexible polymer dispersed liquid crystal (PDLC) devices. The measured electro-optical characteristics and response time of the proposed devices reveal the higher potential of AZO-mica for future ITO-free flexible optoelectronic applications.

scholarly journals Phenotypic and genetic variation of ultraviolet–visible-infrared spectral wavelengths of bovine meat

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Giovanni Bittante ◽  
Simone Savoia ◽  
Alessio Cecchinato ◽  
Sara Pegolo ◽  
Andrea Albera
Keyword(s):  
Meat Quality ◽  
Genetic Improvement ◽  
Near Infrared ◽  
Infrared Region ◽  
Phenotypic Variance ◽  
Quality Traits ◽  
Meat Quality Traits ◽  
Infrared Spectral ◽  
Portable Spectrometers ◽  
Absorbance Spectra

AbstractSpectroscopic predictions can be used for the genetic improvement of meat quality traits in cattle. No information is however available on the genetics of meat absorbance spectra. This research investigated the phenotypic variation and the heritability of meat absorbance spectra at individual wavelengths in the ultraviolet–visible and near-infrared region (UV–Vis-NIR) obtained with portable spectrometers. Five spectra per instrument were taken on the ribeye surface of 1185 Piemontese young bulls from 93 farms (13,182 Herd-Book pedigree relatives). Linear animal model analyses of 1481 single-wavelengths from UV–Vis-NIRS and 125 from Micro-NIRS were carried out separately. In the overlapping regions, the proportions of phenotypic variance explained by batch/date of slaughter (14 ± 6% and 17 ± 7%,), rearing farm (6 ± 2% and 5 ± 3%), and the residual variances (72 ± 10% and 72 ± 5%) were similar for the UV–Vis-NIRS and Micro-NIRS, but additive genetics (7 ± 2% and 4 ± 2%) and heritability (8.3 ± 2.3% vs 5.1 ± 0.6%) were greater with the Micro-NIRS. Heritability was much greater for the visible fraction (25.2 ± 11.4%), especially the violet, blue and green colors, than for the NIR fraction (5.0 ± 8.0%). These results allow a better understanding of the possibility of using the absorbance of visible and infrared wavelengths correlated with meat quality traits for the genetic improvement in beef cattle.

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