Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors

1995 ◽  
Vol 379 ◽  
Author(s):  
Kern Rim ◽  
S. Takagi ◽  
J. J. Welser ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Valence Band ◽  
High Frequency ◽  
Lattice Mismatch ◽  
X Ray Diffraction ◽  
Valence Band Offset ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
P Type ◽  
Reaction Processing

ABSTRACTThe first measurements of Si/SiGeC valence band offsets have been performed using heterostructure p-type MOS capacitors. Single crystalline epitaxial layers of SiGeC and Si were grown by the rapid thermal CVD technique, limited reaction processing, using ethylene as the carbon source. Films with carbon contents of up to ∼1.2% were studied. X-ray diffraction analysis shows the strain compensating effect of carbon in SiGeC. Substitutionality of carbon in SiGe was also confirmed by Fourier transform infrared spectroscopy measurements. MOS capacitors were fabricated by thermal oxidation (750°C) of the epitaxial Si cap on top of the SiGeC layer. Quasi-static and high frequency capacitance-voltage measurements show wellbehaved characteristics for the samples with carbon contents up to approximately 1%. Onedimensional Poisson simulations of the C-V curves were used to extract the valence band offset between Si and SiGeC. For a fixed germanium fraction, the offset decreases with increasing carbon content. However, for a given lattice mismatch, the offset for Si/Si1−x−yGexCy is larger than the measured value for Si/Si1−zGez.

X-ray diffraction measurement of doping induced lattice mismatch in n-type 4H-SiC epilayers grown on p-type substrates

2003 ◽  
Vol 83 (10) ◽  
pp. 1971-1973 ◽  
Author(s):  
Robert S. Okojie ◽  
Thomas Holzheu ◽  
XianRong Huang ◽  
Michael Dudley
Keyword(s):  
Lattice Mismatch ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
P Type

scholarly journals The Synthesis of NiO/TiO2Heterostructures and Their Valence Band Offset Determination

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Z. H. Ibupoto ◽  
M. A. Abbasi ◽  
X. Liu ◽  
M. S. AlSalhi ◽  
M. Willander
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Glass Substrate ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Conduction Band Offset ◽  
P Type ◽  
Fto Glass

In this work, a heterojunction based on p-type NiO/n-type TiO2nanostructures has been prepared on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. Scanning electron microscopy (SEM) and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO) of the NiO/TiO2heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2heterojunction. The valence band offset was found to be∼0.41 eV and the conduction band was calculated about∼0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.

Time Dependence of γ/γ' Lattice Mismatch in Creep-Deformed Single Crystal Superalloy SC16 at 1173 K

2007 ◽  
Vol 539-543 ◽  
pp. 3059-3063 ◽  
Author(s):  
G. Schumacher ◽  
N. Darowski ◽  
I. Zizak ◽  
Hellmuth Klingelhöffer ◽  
W. Chen ◽  
...  
Keyword(s):  
Single Crystal ◽  
Lattice Mismatch ◽  
Lattice Misfit ◽  
Peak Position ◽  
Single Crystal Superalloy ◽  
Tensile Creep ◽  
Full Width ◽  
X Ray Diffraction ◽  
X Ray ◽  
Time Period

The profiles of 001 and 002 reflections have been measured at 1173 K as a function of time by means of X-ray diffraction (XRD) on tensile-creep deformed specimens of single crystal superalloy SC16. Decrease in line width (full width at half maximum: FWHM) by about 7 % and increase in peak position by about 3x10-4 degrees was detected after 8.5x104 s. Broadening of the 002 peak profile indicated a more negative value of the lattice misfit after the same time period. The results are discussed in the context of the anisotropic arrangement of dislocations at the γ/γ’ interfaces during creep and their rearrangement during the thermal treatment at 1173 K.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

An X-ray scattering study on inverted Ge–Si huts grown at low temperatures

2004 ◽  
Vol 19 (4) ◽  
pp. 347-351
Author(s):  
J. Xu ◽  
X. S. Wu ◽  
B. Qian ◽  
J. F. Feng ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Lattice Strain ◽  
Lattice Mismatch ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Large Lattice ◽  
Scattering Study

Ge–Si inverted huts, which formed at the Si∕Ge interface of Si∕Ge superlattice grown at low temperatures, have been measured by X-ray diffraction, grazing incidence X-ray specular and off-specular reflectivities, and transmission electron microscopy (TEM). The surface of the Si∕Ge superlattice is smooth, and there are no Ge–Si huts appearing on the surface. The roughness of the surfaces is less than 3 Å. Large lattice strain induced by lattice mismatch between Si and Ge is found to be relaxed because of the intermixing of Ge and Si at the Si∕Ge interface.

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

Superstructure formation in the solid solution Sc3Pt3−xIn3 (x = 0–0.93)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nataliya L. Gulay ◽  
Rolf-Dieter Hoffmann ◽  
Jutta Kösters ◽  
Yaroslav M. Kalychak ◽  
Stefan Seidel ◽  
...  
Keyword(s):  
Solid Solution ◽  
Diffraction Data ◽  
High Frequency ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
Platinum Content ◽  
Arc Melting ◽  
Modulation Vector

Abstract The equiatomic indide ScPtIn (ZrNiAl type, space group P 6 ‾ $‾{6}$ 2m) shows an extended solid solution Sc3Pt3–xIn3. Several samples of the Sc3Pt3–xIn3 series were synthesized from the elements by arc-melting and subsequent annealing, or directly in a high frequency furnace. The lowest platinum content was observed for Sc3Pt2.072(3)In3. All samples were characterized by powder X-ray diffraction and their lattice parameters and several single crystals were studied on the basis of precise single crystal X-ray diffractometer data. The correct platinum occupancy parameters were refined from the diffraction data. Decreasing platinum content leads to decreasing a and c lattice parameters. Satellite reflections were observed for the Sc3Pt3–xIn3 crystals with x = 0.31–0.83. These satellite reflections could be described with a modulation vector ( 1 3 , 1 3 , γ ) $\left(\frac{1}{3},\frac{1}{3},\gamma \right)$ ( γ = 1 2 $\gamma =\frac{1}{2}$ c* for all crystals) and are compatible with trigonal symmetry. The interplay of platinum filled vs. empty In6 trigonal prisms is discussed for an approximant structure with space group P3m1.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

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