Grazing-Incidence X-Ray Diffraction Studies of the Relaxation Behavior in Galnas/GaAs Multilayers Grown on GaAs[001]

1995 ◽  
Vol 379 ◽  
Author(s):  
Dirk Rose ◽  
Ullrich Pietsch
Keyword(s):  
Angular Position ◽  
Grazing Incidence ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Gaas Barrier ◽  
Out Of Plane ◽  
Orientational Distribution ◽  
Average Size

ABSTRACTThe depth profile of the defect structure in strained and partially relaxed Ga0.8In0.2As/GaAs[001] multilayers is investigated with the method of X-ray grazing-incidence diffraction. Both in-plane and out-of-plane parameters are obtained from the subsurface region between five and a few hundred nm.The strength of the method is demonstrated on a sample series with similar thickness of the Ga0.8In0.2As sublayers, ta, but with varying thickness of the GaAs barrier, tb.The degree of relaxation R is directly obtained from the angular position of the in-plane Bragg peaks. For decreasing ta the peak maximum shifts to smaller angles which indicates an increase of R. Additionally the peak width is enlarged. This is explained by the orientational distribution of strain-reduced microdomains which are formed during the relaxation process. Their average size is estimated from the shape of the truncation rods which are recorded at the angular position of the in-plane Braggpeaks. The resulting size of about 100nm is additionally verified by high-resolution X-ray diffraction. The existence of microdomains is caused by a cross-hatched network of 60° misfit dislocations which is confirmed by TEM-measurements.

Grazing incidence diffraction of cadmium arachidate multilayers at the solid-liquid interface

2005 ◽  
Vol 220 (12) ◽  
Author(s):  
Chad E. Miller ◽  
Jaroslaw Majewski ◽  
Thomas Gog ◽  
Tonya L. Kuhl
Keyword(s):  
Arachidic Acid ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Organic Layers ◽  
Grazing Incidence Diffraction ◽  
Synchrotron Beam ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Monochromatic Synchrotron

AbstractUsing complementary X-ray reflectivity (XR) and grazing incidence X-ray diffraction (GIXD), we report structural studies of supported thin-organic layers in contact with water and air. Using a monochromatic synchrotron beam to penetrate 10 mm of liquid, we have characterized buried films composed of 12.5 repeating bilayers of arachidic acid (C

Waveguide-enhanced scattering from thin biomolecular films

2002 ◽  
Vol 35 (2) ◽  
pp. 163-167 ◽  
Author(s):  
F. Pfeiffer ◽  
U. Mennicke ◽  
T. Salditt
Keyword(s):  
Lipid Bilayers ◽  
Signal To Noise Ratio ◽  
Acyl Chain ◽  
Grazing Incidence ◽  
Waveguide Structure ◽  
X Ray Diffraction ◽  
Signal To Noise ◽  
X Ray ◽  
Grazing Incidence Diffraction ◽  
Chain Ordering

An X-ray diffraction experiment on multilamellar membranes incorporated into an X-ray waveguide structure is reported. In the device, the lipid bilayers are confined to one side by the silicon substrate and to the other side by an evaporated thin metal cap layer. Shining a highly brilliant X-ray beam onto the system, resonantly enhanced, precisely defined and clearly distinguishable standing-wavefield distributions (modes) are excited. The in-plane structure of the acyl chain ordering is then studied by grazing incidence diffraction under simultaneously excited modes. A significant gain in signal-to-noise ratio as well as enhanced spatial resolution can be obtained with such a setup.

Generalized grazing-incidence-angle X-ray diffraction (G-GIXD) using image plates

1998 ◽  
Vol 5 (3) ◽  
pp. 488-490 ◽  
Author(s):  
Yasuo Takagi ◽  
Masao Kimura
Keyword(s):  
Incidence Angle ◽  
Incident Beam ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface And Interface ◽  
Out Of Plane ◽  
Grazing Incidence Angle ◽  
Interface Layers

A new and more `generalized' grazing-incidence-angle X-ray diffraction (G-GIXD) method which enables simultaneous measurements both of in- and out-of-plane diffraction images from surface and interface structures has been developed. While the method uses grazing-incidence-angle X-rays like synchrotron radiation as an incident beam in the same manner as in `traditional' GIXD, two-dimensional (area) detectors like image plates and a spherical-type goniometer are used as the data-collection system. In this way, diffraction images both in the Seemann–Bohlin (out-of-plane) and GIXD geometry (in-plane) can be measured simultaneously without scanning the detectors. The method can be applied not only to the analysis of the in-plane crystal structure of epitaxically grown thin films, but also to more general research topics like the structural analysis of polycrystalline mixed phases of thin surface and interface layers.

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 202 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(111)/Si(111) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

Interface Structure of Epitaxial Nb Films on Sapphire: Grazing Incidence X-Ray Diffraction and X-Ray Reflectivity Studies

1990 ◽  
Vol 209 ◽  
Author(s):  
C. H. Lee ◽  
K. S. Liang ◽  
F. S. Shieu ◽  
S.L. Sass ◽  
C. P. Flynn
Keyword(s):  
Grazing Incidence ◽  
Interface Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Buried Interfaces ◽  
Diffraction Effects

ABSTRACTThe interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence x-ray diffraction and x-ray reflectivity measurements. Specifically, the use of these x-ray techniques in probing the buried interfaces was demonstrated. Diffraction effects were observed which are consistent with the presence of misfit dislocations in the interface.

Analysis the Actual Nanostructure of α Phase Polyoctylfluorene Thin Film via Synchrotron Grazing-Incidence X-Ray Diffraction

2013 ◽  
Vol 333-335 ◽  
pp. 1832-1835
Author(s):  
Liu Ran Chen ◽  
Xi Chen ◽  
Ji Cai Liang ◽  
Ji Dong Zhang
Keyword(s):  
Thin Film ◽  
Grazing Incidence ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Α Phase ◽  
Out Of Plane ◽  
Diffraction Signal

The nanostructure of α phase polyoctylfluorene thin film was characterized using normal X-ray diffraction, one-dimensional out-of-plane grazing incidence X-ray diffraction and two-dimensional grazing incidence X-ray diffraction with lab diffractometer and synchrotron diffractometer. The results show that using grazing incidence X-ray diffraction the weak diffraction signal of thin film can be observed after the elimination of background signals. Incorrect (h10) diffraction signals can be collected by lab diffractometer due to its low collimation and resolution, which can be overcome by using synchrotron diffractometer with high collimation and resolution that reveal the actual microstructure of polyoctylfluorene thin film.

Microstructure of Epitaxial Al(111)/Si(111) Films Studied by Synchrotron Grazing Incidence X-Ray Diffraction

1990 ◽  
Vol 208 ◽  
Author(s):  
H. H. Hung ◽  
K. S. Liang ◽  
C. H. Lee ◽  
T.-M. Lu
Keyword(s):  
Annealed Film ◽  
Grazing Incidence ◽  
Misfit Strain ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Incommensurate Structure ◽  
Before And After ◽  
Beam Deposition

ABSTRACTWe report the results of our x-ray diffraction studies on epitaxial Al(lll)/Si(lll) films prepared by the partially ionized beam deposition technique. Significant changes were observed in intensity profiles for samples before and after annealing. In the in-plane radial scan of Al(220) peak, the shift of Bragg peak is shown due to misfit strain. A weak satellite is also observed which indicates a semicoherent interfacial structure of the annealed film with misfit dislocations. A possible picture of misfit-induced incommensurate structure of Al films is discussed.

scholarly journals Multiple scattering in grazing-incidence X-ray diffraction: impact on lattice-constant determination in thin films

2016 ◽  
Vol 23 (3) ◽  
pp. 729-734 ◽  
Author(s):  
Roland Resel ◽  
Markus Bainschab ◽  
Alexander Pichler ◽  
Theo Dingemans ◽  
Clemens Simbrunner ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Angle ◽  
Grazing Incidence ◽  
X Rays ◽  
Organic Thin Film ◽  
X Ray Diffraction ◽  
Reliable Determination ◽  
X Ray ◽  
Out Of Plane

Dynamical scattering effects are observed in grazing-incidence X-ray diffraction experiments using an organic thin film of 2,2′:6′,2′′-ternaphthalene grown on oxidized silicon as substrate. Here, a splitting of all Bragg peaks in the out-of-plane direction (z-direction) has been observed, the magnitude of which depends both on the incidence angle of the primary beam and the out-of-plane angle of the scattered beam. The incident angle was varied between 0.09° and 0.25° for synchrotron radiation of 10.5 keV. This study reveals comparable intensities of the split peaks with a maximum for incidence angles close to the critical angle of total external reflection of the substrate. This observation is rationalized by two different scattering pathways resulting in diffraction peaks at different positions at the detector. In order to minimize the splitting, the data suggest either using incident angles well below the critical angle of total reflection or angles well above, which sufficiently attenuates the contributions from the second scattering path. This study highlights that the refraction of X-rays in (organic) thin films has to be corrected accordingly to allow for the determination of peak positions with sufficient accuracy. Based thereon, a reliable determination of the lattice constants becomes feasible, which is required for crystallographic structure solutions from thin films.

scholarly journals X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 868-873 ◽  
Author(s):  
Peter Zaumseil ◽  
Grzegorz Kozlowski ◽  
Yuji Yamamoto ◽  
Markus Andreas Schubert ◽  
Thomas Schroeder
Keyword(s):  
Tensile Strain ◽  
Chemical Vapour ◽  
Grazing Incidence ◽  
Silicon On Insulator ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Soi Substrates ◽  
Nanostructured Si

On the way to integrate lattice mismatched semiconductors on Si(001), the Ge/Si heterosystem was used as a case study for the concept of compliant substrate effects that offer the vision to be able to integrate defect-free alternative semiconductor structures on Si. Ge nanoclusters were selectively grown by chemical vapour deposition on Si nano-islands on silicon-on-insulator (SOI) substrates. The strain states of Ge clusters and Si islands were measured by grazing-incidence diffraction using a laboratory-based X-ray diffraction technique. A tensile strain of up to 0.5% was detected in the Si islands after direct Ge deposition. Using a thin (∼10 nm) SiGe buffer layer between Si and Ge the tensile strain increases to 1.8%. Transmission electron microscopy studies confirm the absence of a regular grid of misfit dislocations in such structures. This clear experimental evidence for the compliance of Si nano-islands on SOI substrates opens a new integration concept that is not only limited to Ge but also extendable to semiconductors like III–V and II–VI materials.

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