Classical and Rapid Thermal Process Effects on Oxygen and Carbon Precipitation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
K. Mahfoud ◽  
M. Loghmarti ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Impurity Content ◽  
Interstitial Oxygen ◽  
Rapid Thermal Process ◽  
Initial Oxygen Content ◽  
Initial Oxygen ◽  
Process Effects ◽  
Carbon Precipitation ◽  
Silicon Materials

AbstractWe report observations on the effects of rapid thermal annealing on oxygen and carbon content of different single and multicrystalline silicon materials.From the comparison between the resulting effects of conventional and short thermal annealing, we can deduce that the increase of the concentration of interstitial oxygen after a rapid thermal annealing (RTA) is due to the dissociation of some microprecipitates in silicon, which is significantly affected by the initial oxygen content, thermal history, defects and impurity content such as carbon.

Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers

2009 ◽  
Vol 156-158 ◽  
pp. 279-282
Author(s):  
V.G. Litovchenko ◽  
I.P. Lisovskyy ◽  
M. Voitovych ◽  
Andrey V. Sarikov ◽  
S.O. Zlobin ◽  
...  
Keyword(s):  
Experimental Data ◽  
Infrared Spectroscopy ◽  
Kinetic Model ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Structure ◽  
Oxide Phase ◽  
Interstitial Oxygen ◽  
Single Crystalline ◽  
Oxygen Precipitation

In this paper, the influence of the rapid thermal annealing of single crystalline Cz-Si wafers on the evolution of the concentration of interstitial oxygen as well as oxygen in precipitated oxide phase was investigated by infrared spectroscopy. The wafers were preliminary furnace annealed to create the precipitate seeds. The concentration of interstitial oxygen was shows to decrease considerably as a result of annealing during up to 40 min together with the growth of the concentration of precipitated oxygen. This effect depended on the purity and defect structure of initial wafers. The kinetic model was developed to account for the observed effects based on the modification of the solubility level for interstitial oxygen induced by defects as well as its diffusivity. Obtained results of simulation agree well with the experimental data.

Phosphorus Glass Doping of Polycrystalline Silicon During Rapid Thermal Annealing

1992 ◽  
Vol 283 ◽  
Author(s):  
Bouchaib Hartiti ◽  
Abdelilah Slaoui ◽  
Roland Stuck ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Glass Film ◽  
Shallow Junctions ◽  
Silicon Materials ◽  
Diffusion Source ◽  
Phosphorus Doped

ABSTRACTWe show that the use of phosphorus doped spin-on glasses as diffusion source is an attractive approach for the formation of shallow junctions in polycrystalline silicon materials. Moreover, this very simple doping process using a glass film can be fruitfully associated to rapid thermal annealing.

Ultra-Rapid Thermal Process for ULSIs

2008 ◽  
Vol 573-574 ◽  
pp. 319-324 ◽  
Author(s):  
Kyoichi Suguro
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Process ◽  
Impurity Diffusion ◽  
Electrical Activation ◽  
Halogen Lamp ◽  
Next Generation ◽  
Rapid Thermal Process ◽  
Good Balance

This paper reports on the ultra-rapid thermal annealing of next generation MOSFETs. In ultra-rapid thermal annealing, the most important issue is to achieve a good balance between electrical activation and impurity diffusion. Another issue of annealing implantation damages is also discussed: Optimized annealing combined with millisecond annealing and conventional halogen lamp annealing is necessary for annealing out defects at end-of range region. Application possibilities of millisecond annealing for deep junction activation and oxidation are also discussed.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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