Room Temperature Infrared Electroluminescence from Thin-Film Polycrystalline Chalcopyrite Cu(In,Ga)Se2-Based Diodes

1995 ◽  
Vol 378 ◽  
Author(s):  
Miguel A. Contreras ◽  
John Webb ◽  
Andrew Tennant ◽  
Rommel Noufi
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Near Infrared ◽  
Luminescence Spectra ◽  
Polycrystalline Thin Films ◽  
Curve Fit ◽  
Device Structures ◽  
Infrared Spectral ◽  
Relationship Of ◽  
Ft Raman

AbstractEvidence of room-temperature infrared electroluminescence from thin-film polycrystalline CuInxGa1-xSe2-based diodes (0<×<0.4) has been observed by Fourier transform spectroscopy using a FT-Raman spectrophotometer that operates in the near-infrared spectral region. Electroluminescence spectra from ternary CuInSe2 and quaternary Cu(In,Ga)Se2 device structures are reported. In all electroluminescence cases we observe an approximate linear relationship of intensity to forward junction current. Film fabrication process determines to a great extent the optoelectronic properties of the emitters, and consequently, the characteristics of their luminescence spectra. Using a Gaussian multi-peak curve-fit routine to analyze electroluminescence spectra, we can deduce the position, width and relative intensity of the dominant optical transitions. Our purpose in this contribution is two-fold: (1) To report the room-temperature electroluminescence phenomena from chalcopyrite Cu(In,Ga)Se2 polycrystalline thin-films, and (2) to demonstrate electroluminescence as a viable technique to optically characterize Cu(In,Ga)Se2 materials using diode structures at RT.

Near-infrared and visible luminescence and absorption spectroscopy of low-coordinate organometallic rhenium compounds

1996 ◽  
Vol 74 (1) ◽  
pp. 28-31
Author(s):  
Carole Savoie ◽  
Christian Reber
Keyword(s):  
Low Temperature ◽  
Near Infrared ◽  
Organic Ligands ◽  
Luminescence Spectra ◽  
Relaxation Processes ◽  
Nonradiative Relaxation ◽  
Visible Luminescence ◽  
Infrared Spectral ◽  
Absorption And Luminescence Spectra ◽  
Stokes Shifts

Low-temperature absorption and luminescence spectra of four organorhenium compounds were measured in the visible and near-infrared spectral regions. Effects of the temperature, formal oxidation state, and the oxo-, bromo-, and organic ligands on the metal center are reported. The emission maxima of the four compounds show a large variation between 9000 and 14 200 cm−1. Stokes shifts show a smaller variation from 3700 to 4200 cm−1. Luminescence intensities are used to qualitatively characterize nonradiative relaxation processes. Key words: luminescence spectra, absorption spectra, organorhenium compounds.

Growth and Magneto-Optical Properties of CaTbAlO4 Crystal

2011 ◽  
Vol 306-307 ◽  
pp. 1722-1727 ◽  
Author(s):  
Man Mei ◽  
Li Li Cao ◽  
Yan He ◽  
Ru Ru Zhang ◽  
Fei Yun Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Single Crystal ◽  
Room Temperature ◽  
Near Infrared ◽  
Visible Region ◽  
Czochralski Method ◽  
Optical Devices ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infrared Spectral

The calcium terbium aluminate (CaTbAlO4) single crystal was grown by Czochralski method successfully for the first time.The structure of the crystal was determined by X-ray diffraction analysis.The transmission spectrum of the crystal was measured at room temperature at the wavelength of 400-1500nm.The specific Faraday rotation of the single crystal was surveyed at room temperature at the wavelength 532nm, 633nm, and 1064nm respectively.The Verdet constants of the CaTbAlO4 crystal are calculated and the results show that the Verdet constants of CaTbAlO4 are around 110% higher than that of TGG in the visible and near-infrared spectral region.Therefore,crystal CaTbAlO4 can be promising material for the fabrication of magneto-optical devices in the visible region.

Near- versus Mid-Infrared Spectroscopy: Relationships between Spectral Changes Induced by Water and Relative Information Content of the Two Spectral Regions in Regard to High-Moisture Samples

1995 ◽  
Vol 49 (3) ◽  
pp. 295-303 ◽  
Author(s):  
James B. Reeves
Keyword(s):  
Infrared Spectra ◽  
Near Infrared ◽  
High Moisture ◽  
Mid Infrared ◽  
Spectral Changes ◽  
Near Infrared Spectra ◽  
Infrared Spectral ◽  
Water Ph ◽  
Relative Information Content ◽  
Relationship Of

The objectives of this work were to examine similarities and differences in the near-infrared and mid-infrared spectral regions when one is working with high-moisture materials and to study spectral changes in these regions as a method to identify the relationship of spectral information in the near-IR to fundamental absorptions in the mid-IR. Near- and mid-infrared spectra were taken with a Digilab FTS-65 Fourier transform spectrometer. Liquids were examined by transmission and solids by reflectance. Results with solutions showed that less spectral distortion arises when one is subtracting water from mid- rather than from near-infrared spectra. It was also easier to produce high-quality spectra in the mid-infrared by using attenuated total reflectance than by using transmission in the near-infrared. While mid-infrared spectra showed changes (induced by water, pH, physical state, and ionic strength) similar to those found in the near-infrared, there appeared to be more information available in the mid-infrared, even in the presence of water.

Nanostructure Formation in Silicon Photovoltaic Cells by Femtosecond Laser Pulses

2010 ◽  
Vol 670 ◽  
pp. 118-121 ◽  
Author(s):  
A.M. Taleb ◽  
K.A. Al-Naimee ◽  
S.F. Abdalah ◽  
Riccardo Meucci ◽  
F.T. Arecchi
Keyword(s):  
Femtosecond Laser ◽  
Room Temperature ◽  
Near Infrared ◽  
Spectral Response ◽  
Photovoltaic Cells ◽  
Laser Pulses ◽  
Photovoltaic Cell ◽  
Femtosecond Laser Pulses ◽  
Irradiation Effect ◽  
Infrared Spectral

The experimental evidence of the effect of femtosecond laser pulses on the spectral response of a Silicon photovoltaic cell is demonstrated and investigated. The response of this device is covering the visible to near infrared spectral region. The responsivity of the photovoltaic cell is enhanced from 0.18A/W (0.5A/W to 0.85 A/W) to 0.25A/W, this means that the conversion efficiency increases from about 9% to about 14% due to irradiation effect. All treatments and measurements have been done at room temperature. The observed enhancement is related to the appearing of nano-structured groves in the 700-900 nm range.

AMORPHOUS COPPER DISELENIDE THIN FILMS DOPED WITH GALLIUM AND INDIUM BY LASER-INDUCED DOPING

2013 ◽  
Vol 27 (09) ◽  
pp. 1350030 ◽  
Author(s):  
NAM-HOON KIM ◽  
JI EUN JEON ◽  
GEUM-BAE CHO ◽  
WOO-SUN LEE ◽  
DONG-YOU CHOI
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spectral Region ◽  
Near Infrared ◽  
Irradiation Time ◽  
Incident Light ◽  
Band Gap Energy ◽  
Visible Spectral Region ◽  
Group Iii ◽  
Infrared Spectral

The laser-induced doping of amorphous copper diselenide (α- CuSe 2) thin film with gallium (Ga) and indium (In) was performed to control/improve their electrical and optical properties. The CuSe 2 thin films sputtering-deposited using a CuSe 2 alloy target were amorphous and remained amorphous after doping with Ga/In . Doping of group-III-elements enhanced the absorption ability of the α- CuSe 2 thin films in the near-infrared spectral regions (800–1500 nm). The insufficient laser-irradiation time to Ga attributed the nonuniform distribution of Ga content around the surface of the α- CuSe 2 thin films, which prevented the incident light from transiting through the thin film, particularly in the visible spectral region (400–800 nm). Consequently, the absorption coefficient increased with the nonuniformly distributed specimen in the visible and near-infrared spectral regions, which improved the mean absorbance of the α- CuSe 2 thin films from 1.03 to 1.66 by decreasing the optical band gap energy from 2.50 eV to 2.10 eV in the same spectral region. The resistivity, carrier concentration and carrier mobility of the α- CuSe 2 thin films were in 3.76×10-4- 3.83×10-3 Ω cm, 1.41×1020-2.00×1021 cm -3 and 9.9–19.4 cm2/Vs, respectively, regardless of doping, making these films suitable as a wide spectral range absorber layer in photovoltaic applications.

scholarly journals Fluoroindate Glass Co-Doped with Yb3+/Ho3+ as a 2.85 μm Luminescent Source for MID-IR Sensing

Sensors ◽  
2021 ◽  
Vol 21 (6) ◽  
pp. 2155
Author(s):  
Marcin Kochanowicz ◽  
Jacek Zmojda ◽  
Agata Baranowska ◽  
Marta Kuwik ◽  
Bartłomiej Starzyk ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Near Infrared ◽  
Luminescence Spectra ◽  
Infrared Source ◽  
Mid Infrared ◽  
Infrared Luminescence ◽  
Infrared Spectral Range ◽  
Infrared Spectral ◽  
Sensing Application ◽  
Co Doped

This work reports on the fabrication and analysis of near-infrared and mid-infrared luminescence spectra and their decays in fluoroindate glasses co-doped with Yb3+/Ho3+. The attention has been paid to the analysis of the Yb3+→ Ho3+ energy transfer processed ions in fluoroindate glasses pumped by 976 nm laser diode. The most effective sensitization for 2 μm luminescence has been obtained in glass co-doped with 0.8YbF3/1.6HoF3. Further study in the mid-infrared spectral range (2.85 μm) showed that the maximum emission intensity has been obtained in fluoroindate glass co-doped with 0.1YbF3/1.4HoF3. The obtained efficiency of Yb3+→ Ho3+ energy transfer was calculated to be up to 61% (0.8YbF3/1.6HoF3), which confirms the possibility of obtaining an efficient glass or glass fiber infrared source for a MID-infrared (MID-IR) sensing application.

Luminescence Spectra of TeO2-PbO-Li2O Doped Nd2O3 Glass

2012 ◽  
Vol 501 ◽  
pp. 121-125 ◽  
Author(s):  
K. Azman ◽  
W.A.W. Razali ◽  
H. Azhan ◽  
M.R. Sahar
Keyword(s):  
Room Temperature ◽  
Near Infrared ◽  
Tellurite Glass ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Luminescence Spectra ◽  
Excitation Wavelength ◽  
Wavelength Emission ◽  
Absorption And Emission Spectroscopy ◽  
Near Infrared Emission

A tellurite glass of TeO2-PbO-Li2O doped with Nd2O3 has been successfully fabricated by using the conventional melt-quenched technique. The absorption and emission spectroscopy have been identified using UV-VIS-NIR and photoluminescence spectrometer, respectively. From the spectroscopy, ten significant spectra have been observed in the region of 400-900 nm. The absorption wavelength centered at 585 nm attributed to 4I9/2 → 4G5/2 transition is the predominant wavelength to be used as the excitation wavelength. Emission spectra have been determined by using 585 nm excitation wavelength at room temperature. From the emission spectra, seven distinctive upconversion bands contributed from Nd3+ were observed in the region of 400-1500 nm. It was found that the bands were centered at 450 nm (4G11/2 → 4I9/2), 485 nm (4G11/2 → 4I11/2), 605 nm (4G11/2 → 4I15/2), 665 nm (4G7/2 → 4I13/2), 880 nm (4F3/2 → 4I9/2), 1062 nm (4F3/2 → 4I11/2) and 1340 nm (4F3/2 → 4I11/2), respectively. Tthese emission bands showed the possibility of visible and near infrared emission spectra.

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