Activation of Implanted Phosphorus Ions into Silicon by Followed Hydrogen Ion Implantations

1995 ◽  
Vol 378 ◽  
Author(s):  
Y. Hasebe ◽  
H. Ohshima ◽  
T. Hattori ◽  
A. Usami ◽  
Y. Tokuda
Keyword(s):  
Dose Rate ◽  
Depth Profile ◽  
Elastic Collision ◽  
Hydrogen Ion ◽  
Phosphorus Concentration ◽  
Hydrogen Atoms ◽  
Transmission Electron ◽  
Lower Dose Rate ◽  
Activation Ratio ◽  
Secondary Ion

AbstractThe activation of phosphorus implanted into n-type silicon (100) substrate by followed hydrogen ion(H +) implantation was studied by means of spreading resistance technique(SR), secondary ion mass spectroscopy(SIMS) and transmission electron microscopy(TEM).“The activation ratio” defined by carrier concentration divided by phosphorus concentration was used as a measure of activation of phosphorus. The H + energy, dose and dose rate dependence of activation ratio of phosphorus was investigated.In the case of thermal annealing at 400 °C for 200 minutes the phosphorus atoms were not activated, on the other hand in the case of H + implantation at 400 °C the phosphorus atoms were activated and the activation ratio was increased almost proportionally with the dose. The SIMS data suggested that the depth profile of phosphorus atoms was not changed after activation by H + implantation. The activation ratio was increased with decreasing the dose rate. The TEM data suggested that the density of residual defects was reduced in the case of lower dose rate. The depth profile of activation ratio was similar to that of hydrogen atoms implanted at 20 °C. From these results the activation and recrystalization mechanism is discussed in the view of contribution of elastic collision process between H + ions and substrate atoms.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

Ge-Related Interfacial Defects in Sige Alloy Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
Patricia J. Macfarlane ◽  
M. E. Zvanut ◽  
W. E. Carlos ◽  
M. E. Twigg ◽  
P. E. Thompson
Keyword(s):  
Depth Profile ◽  
Epr Spectra ◽  
Transmission Electron Micrograph ◽  
Dangling Bond ◽  
Electron Micrograph ◽  
Cross Sectional ◽  
Paramagnetic Resonance ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Electron Paramagnetic

AbstractThis paper reports etching results supporting the identification of the SG1 center as a germanium dangling bond defect at the interface between an oxide and crystalline SiGe. The presence of this defect is significant because, like an analogous center in Si-based systems, it may alter the operation of any microelectronic or micro-optical device which incorporates an interface between SiGe and an overlying oxide. The samples examined are oxygen implanted SiGe layers in which the SG1 center is believed to occur at the interface between oxide precipitates and SiGe. Because of the center's apparent relation to the oxide precipitates distributed through layers of the sample, a depth profile assists in confirming the interfacial nature of the defect. We obtain a depth profile by comparing electron paramagnetic resonance (EPR) spectra of samples etched to decreasing thickness. EPR spectra indicate that the SG1 center decreases with depth in a manner that when correlated to a cross sectional transmission electron micrograph confirms the association with SiO2 and supports its location at the SiGe/SiO2 precipitate interface.

The Distribution of Phosphorus in Romano-British Ironwork

1990 ◽  
Vol 185 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Robert M. Ehrenreich
Keyword(s):  
Electron Microscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Materials Analysis ◽  
X Ray ◽  
Transmission Electron ◽  
Depth Study ◽  
Iron Artifacts ◽  
And Performance ◽  
Secondary Ion

AbstractPhosphorus is found to be a common impurity in many of the iron tools and weapons produced during the pre-Roman and Roman Iron Ages of Britain (600 BC - 300 AD). The effects of this impurity on the properties and performance of antiquarian materials is not well understood, however. This paper presents the initial findings of an in-depth study of the distribution, chemistry, and effects of phosphorus in Romano-British ironwork. For this purpose, two Romano-British iron artifacts from the site of Ircheoter, Northamptonshire, were examined using powerful techniques for archeological materials analysis that include electron microprobe, secondary ion mass spectroscopy (SIMS), transmission electron microscopy (TEM) with energydispersive x-ray spectroscopy capabilities (EDXS), and Auger electron spectroscopy (AES). It was found that phosphorous was indeed present in the artifacts. The phosphorus atoms were predominantly segregated at grain boundaries and thus should have led to a lowering of grain boundary cohesion and a degradation in the performance of the tools.

scholarly journals Изменение структуры и свойств приповерхностного слоя Si, имплантированного Zn, в зависимости от флюенса облучения ионами -=SUP=-132-=/SUP=-Xe-=SUP=-26+-=/SUP=- с энергией 167 МэВ

2019 ◽  
Vol 53 (3) ◽  
pp. 332
Author(s):  
В.В. Привезенцев ◽  
В.С. Куликаускас ◽  
В.А. Скуратов ◽  
О.С. Зилова ◽  
А.А. Бурмистров ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Cross Section ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Transmission Electron ◽  
Oxide Phases ◽  
Secondary Ion ◽  
Surface Pores ◽  
Scanning Electron

AbstractSingle-crystal n -Si(100) wafers are implanted with ^64Zn^+ ions with an energy of 50 keV and dose of 5 × 10^16 cm^–2. Then the samples are irradiated with ^132Xe^26+ ions with an energy of 167 MeV in the range of fluences from 1 × 10^12 to 5 × 10^14 cm^–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 10^14 cm^–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.

scholarly journals Dating of Obsidian Tools by Water Diffusion (SIMS-SS) with a Novel Software

2020 ◽  
Vol 13 ◽  
pp. 234
Author(s):  
I. Liritzis ◽  
T. Ganetsos ◽  
N. Laskaris
Keyword(s):  
Mass Spectrometry ◽  
Diffusion Process ◽  
Depth Profile ◽  
Secondary Ion Mass Spectrometry ◽  
Environmental Water ◽  
Water Diffusion ◽  
Asia Minor ◽  
One Dimensional ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Diffusion of environmental water into the surface of obsidian tools of archaeological origin is monitored by secondary ion mass spectrometry (SIMS), which provides a H+ concentration (C) versus hydration depth profile. The modeling of this diffusion process, as one-dimensional phenomena, is based on the idea that a saturated surface (SS) layer is encountered near the surface. A novel software program has been developed, using MATLAB, incorporating all numerical parameters for the dating of hydrated obsidians using the SIMS profile. This approach has been applied to several archaeological obsidians from the Aegean, Hungary, and Asia Minor and compared with samples from radiocarbon dated cultural phases where the agreement is excellent.

The oestrogenicity of equol in sheep

1984 ◽  
Vol 103 (3) ◽  
pp. 395-399 ◽  
Author(s):  
R. Kaziro ◽  
J. P. Kennedy ◽  
E. R. Cole ◽  
P. T. Southwell-Keely
Keyword(s):  
Growth Rate ◽  
Plasma Concentration ◽  
Plasma Level ◽  
Dose Rate ◽  
Dehydrogenase Activity ◽  
Intramuscular Injection ◽  
Uterine Weight ◽  
Lower Dose Rate ◽  
Short Time ◽  
Glucose 6 Phosphate Dehydrogenase

ABSTRACT The effects of intramuscular injection of synthetic racemic equol (±3-(4-hydroxyphenyl)-3,4-dihydro2H-1-benzopyran-7-ol) into wethers have been examined with respect to maintenance of plasma level, teat growth rate and the activity of the respiratory enzyme glucose-6-phosphate dehydrogenase. At a dose rate of 1·03 mmol/day a steady rise in 'total' (free plus conjugated) equol in plasma occurred to 1·78μmol/l in 4 days. A dose rate of 2·07 mmol/day produced only a further slight increase in plasma equol. At a lower dose rate of 0·52 mmol/day the plasma concentration reached 0·62 μmol/l in 2 days and this was not exceeded thereafter. At the dose rate of 1·03 mmol/day over 7 days significant increases in teat length and glucose-6-phosphate dehydrogenase activity occurred but no significant changes were observed at the dose rate of 0·52 mmol/day. It appears that threshold levels of intake of equol which maintain a plasma level of about 1·65 μmol/l are needed for oestrogenic effects to become apparent within a relatively short time. Administration of 1·03 mmol/day over 5 days to ovariectomized ewes produced significant increases in uterine weight equivalent to those produced by 92 nmol stilboestrol dipropionate. Thus stilboestrol was apparently 56000 times more potent than racemic equol. J. Endocr. (1984) 103, 395–399

Determination of the Distribution of Ion Implantation Boron in Silicon

2000 ◽  
Vol 650 ◽  
Author(s):  
Te-Sheng Wang ◽  
A.G. Cullis ◽  
E.J.H. Collart ◽  
A.J. Murrell ◽  
M.A. Foad
Keyword(s):  
Electron Microscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Low Energy ◽  
Concentration Profiles ◽  
Impurity Profile ◽  
Transmission Electron ◽  
Device Applications ◽  
P Type ◽  
Secondary Ion

ABSTRACTBoron is the most important p-type dopant in Si and it is essential that, especially for low energy implantation, both as-implanted B distributions and those produced by annealing should be characterized in very great detail to obtain the required process control for advanced device applications. While secondary ion mass spectrometry (SIMS) is ordinarily employed for this purpose, in the present studies implant concentration profiles have been determined by direct B imaging with approximately nanometer depth and lateral resolution using energy-filtered imaging in the transmission electron microscopy. The as-implanted B impurity profile is correlated with theoretical expectations: differences with respect to the results of SIMS measurements are discussed. Changes in the B distribution and clustering that occur after annealing of the implanted layers are also described.

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