Interaction of Atomic Hydrogen with Chalcogens in Gaas

1995 ◽  
Vol 378 ◽  
Author(s):  
J. Vetterhöffer ◽  
J. Weber
Keyword(s):  
Hydrogen Atom ◽  
Active Region ◽  
Atomic Hydrogen ◽  
Vibrational Mode ◽  
Depth Profiling ◽  
Infrared Absorption Spectroscopy ◽  
Local Vibrational Mode ◽  
Capacitance Voltage ◽  
Hydrogen Penetration ◽  
Secondary Ion

AbstractThe passivation by hydrogen of the shallow donors sulfur, selenium, and tellurium in GaAs was studied by infrared absorption spectroscopy (FTIR), capacitance-voltage (CV) depth profiling, and secondary ion mass spectroscopy (SIMS). Local vibrational mode (LVM) frequencies due to hydrogen-donor complexes agree with a microscopic model where the hydrogen atom is bound in the antibonding position to one of the donor’s neighboring gallium atoms. Our results suggest a hydrogen penetration depth much greater than the passivated region, however the infrared active region coincides with the passivated part of the material.

Interactions Between Hydrogen and Silicon Acceptors in p-Type GaAs:Si

1987 ◽  
Vol 104 ◽  
Author(s):  
J. Chevallier ◽  
B. Pajot ◽  
A. Jalil ◽  
R. Mostefaoui ◽  
R. Rahbi ◽  
...  
Keyword(s):  
Absorption Spectroscopy ◽  
Infrared Absorption ◽  
Vibrational Mode ◽  
Microscopic Model ◽  
Infrared Absorption Spectroscopy ◽  
Acceptor Concentration ◽  
Local Vibrational Mode ◽  
Deuterium Concentration ◽  
Sims Analysis ◽  
P Type

ABSTRACTWe show that silicon acceptors can be neutralized in p-type GaAs: Si. SIMS analysis shows that the deuterium concentration closely follows the net acceptor concentration. Infrared absorption spectroscopy reveals lines at 2094.7cm-1 and 1514.5cm-1 in hydrogenated and deuterated samples respectively. The ratio r of the two frequencies is 1.383 indicating that the lines are related to hydrogen isotopes. The reduction of the intensity of the local vibrational mode (LVM) of SiAs after neutralization is consistent with the formation of SiAs-H bonds. From SIMS data, it is concluded that most of the hydrogen present in the passivated material is complexed with silicon. A microscopic model of the Si-H complex is proposed.

Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies

2009 ◽  
Vol 156-158 ◽  
pp. 129-134 ◽  
Author(s):  
L.I. Murin ◽  
Bengt Gunnar Svensson ◽  
J. Lennart Lindström ◽  
Vladimir P. Markevich ◽  
Charalamos A. Londos
Keyword(s):  
Fourier Transform ◽  
Room Temperature ◽  
Vibrational Mode ◽  
Clear Correlation ◽  
Interstitial Oxygen ◽  
Infrared Absorption Spectroscopy ◽  
Oxygen Defect ◽  
Absorption Bands ◽  
Local Vibrational Mode ◽  
Oxygen Complexes

Fourier transform infrared absorption spectroscopy was used to study the evolution of multivacancy-oxygen-related defects in the temperature range 200-300 °C in Czochralski-grown Si samples irradiated with MeV electrons or neutrons. A clear correlation between disappearance of the divacancy (V2) related absorption band at 2767 cm-1 and appearance of two absorption bands positioned at 833.4 and 842.4 cm-1 at 20 K (at 825.7 and 839.1 cm-1 at room temperature) has been found. Both these two emerging bands have previously been assigned to a divacancy-oxygen defect formed via interaction of mobile V2 with interstitial oxygen (Oi) atoms. The present study shows, however, that the two bands arise from different defects since the ratio of their intensities depends on the type of irradiation. The 842.4 cm-1 band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect (V3O) formed via interaction of mobile V3 with Oi atoms or/and interaction of mobile V2 with VO defects.

Hydrogen Complexes and their Vibrations in Proton and Deuteron Implanted Inp: Theory and Experiment

1992 ◽  
Vol 291 ◽  
Author(s):  
D. N. Talwar ◽  
D. W. Fischer ◽  
M. O. Manasreh ◽  
G. Matous
Keyword(s):  
Nearest Neighbor ◽  
Vibrational Mode ◽  
The Other ◽  
Absorption Lines ◽  
Infrared Absorption Spectroscopy ◽  
Annealing Behavior ◽  
Local Vibrational Mode ◽  
Stretching Vibration ◽  
Mev Protons ◽  
Theory And Experiment

ABSTRACTBy using a Van de Graaff accelerator we have implanted 2 MeV protons and deuterons into InP samples. These implanted samples were annealed in 50 °C increments in the 200 to 600 °C temperature range for 30 minutes each and then measured by the infrared absorption spectroscopy. A group of four different local vibrational mode absorption lines is observed, each of which arises from the hydrogen-phosphorus stretching vibration with different defects or impurities at nearest-neighbor sites. Each mode exhibits an annealing behavior which is different than any of the other absorption lines. The annealing results are shown and discussed in terms of Green's function calculations of the defects responsible for the two absorption lines.

Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4568-4571
Author(s):  
L.I. Murin ◽  
B.G. Svensson ◽  
J.L. Lindström ◽  
V.P. Markevich ◽  
C.A. Londos
Keyword(s):  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Oxygen Complex

Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy

1991 ◽  
Vol 69 (2) ◽  
pp. 971-974 ◽  
Author(s):  
J. Wagner ◽  
M. Maier ◽  
R. Murray ◽  
R. C. Newman ◽  
R. B. Beall ◽  
...  
Keyword(s):  
Quantitative Assessment ◽  
Vibrational Mode ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy

Ti-doped Gallium Phosphide Layers with Concentrations Above the Mott Limit

2009 ◽  
Vol 1210 ◽  
Author(s):  
Javier Olea Ariza ◽  
David Pastor ◽  
María Toledano-Luque ◽  
Ignacio Mártil ◽  
Germán González-Díaz ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Vibrational Mode ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Laser Melting ◽  
Intermediate Band ◽  
X Ray ◽  
Tof Sims ◽  
Crystalline Domains ◽  
Secondary Ion

AbstractWe have studied the Pulsed-Laser Melting (PLM) effects on Ti implanted GaP to form an Intermediate Band (IB). Structural analysis has been carried out by means of Time of Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), Raman spectroscopy and Glancing Incidence X-Ray Diffraction (GIXRD). After the PLM annealing, Ti concentration is over the Mott limit. Nevertheless, the Raman spectra show a forbidden TO vibrational mode of GaP. This result suggests the formation of crystalline domains with a different orientation in the annealed region regarding to the GaP unannealed substrate. This conclusion has been corroborated by GIXRD measurements. As a result of the polycrystalline lattice, a drop of the mobility is produced.

Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

1991 ◽  
Vol 240 ◽  
Author(s):  
H. S. LEE ◽  
R. T. Lareau ◽  
S. N. Schauer ◽  
R. P. Moerkirk ◽  
K. A. Jones ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
High Concentration ◽  
Ohmic Behavior ◽  
Preferential Sputtering ◽  
Specific Contact ◽  
Secondary Ion ◽  
Diffusion Profiles

ABSTRACTA SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.

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