scholarly journals Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

2002 ◽  
Vol 80 (21) ◽  
pp. 4054-4056 ◽  
Author(s):  
Kian-Giap Gan ◽  
Jin-Wei Shi ◽  
Yen-Hung Chen ◽  
Chi-Kuang Sun ◽  
Yi-Jen Chiu ◽  
...  
1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.


1998 ◽  
Vol 10 (7) ◽  
pp. 1012-1014 ◽  
Author(s):  
Yi-Jen Chiu ◽  
S.B. Fleischer ◽  
J.E. Bowers

Author(s):  
Kian-Giap Gan ◽  
Jin-Wei Shi ◽  
Yi-Jen Chiu ◽  
Chi-Kuang Sun ◽  
John E. Bowers

1992 ◽  
Vol 61 (7) ◽  
pp. 819-821 ◽  
Author(s):  
S. Y. Chou ◽  
Y. Liu ◽  
W. Khalil ◽  
T. Y. Hsiang ◽  
S. Alexandrou

2006 ◽  
Vol 88 (4) ◽  
pp. 041118 ◽  
Author(s):  
M. Mikulics ◽  
E. A. Michael ◽  
R. Schieder ◽  
J. Stutzki ◽  
R. Güsten ◽  
...  

2011 ◽  
Vol 99 (20) ◽  
pp. 203502 ◽  
Author(s):  
Marc Currie ◽  
Fabio Quaranta ◽  
Adriano Cola ◽  
Eric M. Gallo ◽  
Bahram Nabet

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