New Bias-Controlled Three-Color Detectors using Stacked a-SiC:H/a-Si:H Heterostructures

1995 ◽  
Vol 377 ◽  
Author(s):  
Marko Topič ◽  
Franc Smole ◽  
Aleš Groznik ◽  
Jože Furlan
Keyword(s):  
Metal Structure ◽  
Simple System ◽  
Spectral Responsivity ◽  
Rejection Ratio ◽  
Photocurrent Generation ◽  
Current Voltage ◽  
Rate Relationship ◽  
Current Voltage Characteristics ◽  
Geometrical Dimensions ◽  
High Rejection

ABSTRACTA novel family of three-terminal three-color (blue, green, red) detectors based on stacked a-SiC:H/a-Si:H heterostructures is presented: TCO/PIN/TCO/PINIP/TCO/metal and TCO/PINIP/TCO/PIN/TCO/metal structure. The analysis of stacked photodetectors and the optimization of their geometrical dimensions is performed using the adopted ASPIN simulation program. Both structures are mutually compared with regard to calculated current-voltage characteristics and spectral responsivity. They both exhibit linear photocurrent/generation-rate relationship for all three colors at peak wavelengths 430, 530, 630 nm, applying ±1 V or more. This linearity allows that all three colors can be detected with high rejection ratio using simple system electronics.

Fabrication and investigation of asymmetric current‐voltage characteristics of a metal/Langmuir–Blodgett monolayer/metal structure

1990 ◽  
Vol 56 (19) ◽  
pp. 1916-1918 ◽  
Author(s):  
N. J. Geddes ◽  
J. R. Sambles ◽  
D. J. Jarvis ◽  
W. G. Parker ◽  
D. J. Sandman
Keyword(s):  
Metal Structure ◽  
Langmuir Blodgett ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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