Thermopower and 1/f Noise Measurements in Amorphous Silicon-Carbon Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
H. M. Dyalsingh ◽  
G. M. Khera ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Power Spectra ◽  
Carbon Films ◽  
Noise Power ◽  
Mobility Edge ◽  
Silicon Carbon ◽  
Noise Measurements ◽  
Noise Statistics ◽  
Hydrogenated Amorphous ◽  
Q Function

ABSTRACTThermopower, conductivity and 1/f noise measurements have been performed on a series of n-type doped hydrogenated amorphous silicon carbon films that are prepared with varying gas phase concentrations of CH4. The increased disorder at the mobility edge associated with alloying is characterized by the Q-function, which is obtained by combining thermopower and conductivity measurements, and is also reflected in the noise power spectra and noise statistics.

1 / F Noise Measurements of Interacting Current Filaments in Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
C.E. Parman ◽  
N.E. Israeloff ◽  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Power Spectra ◽  
Noise Power ◽  
Switching Noise ◽  
Scale Invariant ◽  
Noise Sources ◽  
Noise Measurements ◽  
Current Filaments ◽  
Hydrogenated Amorphous

The coplanar current in n-lype doped hydrogenated amorphous silicon (a-Si:H) displays random telegraph switching noise, indicating the presence of inhomogeneous current filaments whose conductance varies with time. There are strong correlations of the 1/f noise power spectra across differing frequency octaves which are much larger than expected if the magnitudes of the fluctuators are varied in parallel. The scale invariant second spectra and the temperature dependence of the spectral slope indicate that hydrogen motion is involved in the cooperative dynamics between noise sources. A model is described wherein the properties of the current filaments are modulated by hydrogen-hydrogen interactions which are mediated by the Si strain fields.

1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

1994 ◽  
Vol 336 ◽  
Author(s):  
H. M. Dyalsingh ◽  
G. M. Khera ◽  
J. Kakalios ◽  
C. C. Tsai ◽  
R. A. Street
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Mobility Edge ◽  
Silicon Carbon ◽  
Noise Measurements ◽  
Gaussian Statistics ◽  
Non Gaussian ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Carbon Concentrations

ABSTRACTMeasurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
E. N. Kalabukhova ◽  
S. N. Lukin ◽  
D. V. Savchenko ◽  
B. D. Shanina ◽  
A. V. Vasin ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Characterization of hydrogenated amorphous silicon-carbon films deposited by hybrid-plasma CVD

1994 ◽  
Vol 34 (1-4) ◽  
pp. 409-414 ◽  
Author(s):  
Tadashi Fujii ◽  
Kenji Sameshima ◽  
Hiroshi Okada ◽  
Kenji Yoshida ◽  
Tadao Hashimoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Plasma Cvd ◽  
Silicon Carbon ◽  
Hybrid Plasma ◽  
Hydrogenated Amorphous

Light Induced Changes in the Non-Gaussian Noise Statistics in Doped Hydrogenated Amorphous Silicon

1993 ◽  
Vol 297 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Gaussian Noise ◽  
Hydrogenated Amorphous Silicon ◽  
Noise Power ◽  
Defect Creation ◽  
Non Gaussian ◽  
Noise Statistics ◽  
Induced Changes ◽  
Many Body Interactions ◽  
Hydrogenated Amorphous

The power spectrum of coplanar current fluctuations in n-type doped hydrogenated amorphous silicon (a-Si:H) has been measured before and after metastable defect creation by light soaking. The average magnitude and spectral slope of the 1/f noise are not affected by illumination, however significant changes in the higher order statistics are observed. Associated with the decrease of conductivity upon light soaking (the Staebler-Wronski effect), there is a decrease in the correlation of the noise power which characterize the non-Gaussian noise in the annealed state. These changes in the noise statistics are reversible by annealing. The light-induced changes in the non-Gaussian statistics provide experimental support for models of light induced defect creation which involve long-ranged and many body interactions.

Crystallization of hydrogenated amorphous silicon–carbon films by means of laser treatments

2005 ◽  
Vol 247 (1-4) ◽  
pp. 471-476 ◽  
Author(s):  
G. Ambrosone ◽  
U. Coscia ◽  
S. Lettieri ◽  
P. Maddalena ◽  
C. Minarini ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Silicon Carbon ◽  
Laser Treatments ◽  
Hydrogenated Amorphous
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