1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

1994 ◽  
Vol 336 ◽  
Author(s):  
H. M. Dyalsingh ◽  
G. M. Khera ◽  
J. Kakalios ◽  
C. C. Tsai ◽  
R. A. Street
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Mobility Edge ◽  
Silicon Carbon ◽  
Noise Measurements ◽  
Gaussian Statistics ◽  
Non Gaussian ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Carbon Concentrations

ABSTRACTMeasurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

Thermopower and 1/f Noise Measurements in Amorphous Silicon-Carbon Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
H. M. Dyalsingh ◽  
G. M. Khera ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Power Spectra ◽  
Carbon Films ◽  
Noise Power ◽  
Mobility Edge ◽  
Silicon Carbon ◽  
Noise Measurements ◽  
Noise Statistics ◽  
Hydrogenated Amorphous ◽  
Q Function

ABSTRACTThermopower, conductivity and 1/f noise measurements have been performed on a series of n-type doped hydrogenated amorphous silicon carbon films that are prepared with varying gas phase concentrations of CH4. The increased disorder at the mobility edge associated with alloying is characterized by the Q-function, which is obtained by combining thermopower and conductivity measurements, and is also reflected in the noise power spectra and noise statistics.

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
E. N. Kalabukhova ◽  
S. N. Lukin ◽  
D. V. Savchenko ◽  
B. D. Shanina ◽  
A. V. Vasin ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon carbon alloys for solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 349-353 ◽  
Author(s):  
Giuseppina Ambrosone ◽  
Ubaldo Coscia ◽  
Stefano Lettieri ◽  
Pasqualino Maddalena ◽  
Carlo Privato ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

Valence band structure of hydrogenated amorphous silicon-carbon alloys

1983 ◽  
Vol 59-60 ◽  
pp. 561-564 ◽  
Author(s):  
Yoshifumi Katayama ◽  
Toshikazu Shimada ◽  
Tsuyoshi Uda ◽  
Keisuke L.I. Kobayashi ◽  
Chang-gen Jiang ◽  
...  
Keyword(s):  
Band Structure ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Hydrogenated Amorphous Silicon ◽  
Valence Band Structure ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous
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