Carrier Recombination in A-SI:H P-I-N Devices Studied by PL and EL Spectroscopies

1995 ◽  
Vol 377 ◽  
Author(s):  
C. N. Yeh ◽  
D. X. Han ◽  
K. D. Wang ◽  
L. E. McNeil
Keyword(s):  
Spectral Line ◽  
Temperature Dependence ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Line Shape ◽  
Energy Spectra ◽  
Main Band ◽  
Carrier Recombination ◽  
Peak Energy ◽  
Sample Structure

ABSTRACTBoth photoluminescence (PL) and electroluminescence (EL) energy spectra were studied in the temperature range of 80 to 300 K on a-Si:H p-i-n structures. The EL spectrum depends on several parameters such as the i-layer thickness and the sample structure with or without a buffer layer (b-layer), while the PL spectrum shows no difference when those parameters are varied. Comparing PL and EL in 0.5 μm p-i-n devices with and without a buffer layer, we found that (a) at 80 K, the main-band peak energy is 1.3 eV for PL and 1.2 eV for EL; (b) the PL spectral line shape does not change with the insertion of a buffer layer, but the EL spectra show more enhanced main-band luminescence with the buffer layer; (c) the temperature dependence of the PL intensity shows a slope of 26 K which is similar to that of a-Si:H films, but the EL efficiency shows a weaker temperature dependence that varies with the diode structure.

scholarly journals Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 928
Author(s):  
Yong Du ◽  
Zhenzhen Kong ◽  
Muhammet Toprak ◽  
Guilei Wang ◽  
Yuanhao Miao ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Crystalline Quality ◽  
Initial Growth ◽  
Two Dimensional ◽  
High Quality ◽  
Reduced Pressure

This work presents the growth of high-quality Ge epilayers on Si (001) substrates using a reduced pressure chemical vapor deposition (RPCVD) chamber. Based on the initial nucleation, a low temperature high temperature (LT-HT) two-step approach, we systematically investigate the nucleation time and surface topography, influence of a LT-Ge buffer layer thickness, a HT-Ge growth temperature, layer thickness, and high temperature thermal treatment on the morphological and crystalline quality of the Ge epilayers. It is also a unique study in the initial growth of Ge epitaxy; the start point of the experiments includes Stranski–Krastanov mode in which the Ge wet layer is initially formed and later the growth is developed to form nuclides. Afterwards, a two-dimensional Ge layer is formed from the coalescing of the nuclides. The evolution of the strain from the beginning stage of the growth up to the full Ge layer has been investigated. Material characterization results show that Ge epilayer with 400 nm LT-Ge buffer layer features at least the root mean square (RMS) value and it’s threading dislocation density (TDD) decreases by a factor of 2. In view of the 400 nm LT-Ge buffer layer, the 1000 nm Ge epilayer with HT-Ge growth temperature of 650 °C showed the best material quality, which is conducive to the merging of the crystals into a connected structure eventually forming a continuous and two-dimensional film. After increasing the thickness of Ge layer from 900 nm to 2000 nm, Ge surface roughness decreased first and then increased slowly (the RMS value for 1400 nm Ge layer was 0.81 nm). Finally, a high-temperature annealing process was carried out and high-quality Ge layer was obtained (TDD=2.78 × 107 cm−2). In addition, room temperature strong photoluminescence (PL) peak intensity and narrow full width at half maximum (11 meV) spectra further confirm the high crystalline quality of the Ge layer manufactured by this optimized process. This work highlights the inducing, increasing, and relaxing of the strain in the Ge buffer and the signature of the defect formation.

Phase noise and spectral line shape in semiconductor lasers

1983 ◽  
Vol 19 (3) ◽  
pp. 266-270 ◽  
Author(s):  
B. Daino ◽  
P. Spano ◽  
M. Tamburrini ◽  
S. Piazzolla
Keyword(s):  
Spectral Line ◽  
Phase Noise ◽  
Semiconductor Lasers ◽  
Line Shape ◽  
Spectral Line Shape

Effect of Buffer Layer Thickness on the Growth Properties of Hydrothermally Grown ZnO Nanorods

2011 ◽  
Vol 11 (2) ◽  
pp. 1409-1412 ◽  
Author(s):  
Ah Ra Kim ◽  
Ju-Young Lee ◽  
Bo Ra Jang ◽  
Hong Seung Kim ◽  
Young Ji Cho ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Zno Nanorods ◽  
Growth Properties ◽  
Buffer Layer Thickness

13C NMR-spektroskopische Untersuchungen an Äthylaluminiumverbindungen / 13C NMR Spectroscopic Investigations of Ethylaluminium Compounds

1976 ◽  
Vol 31 (6) ◽  
pp. 730-736 ◽  
Author(s):  
R. Rottler ◽  
C. G. Kreiter ◽  
G. Fink
Keyword(s):  
Temperature Dependence ◽  
Exchange Reaction ◽  
13C Nmr ◽  
Line Shape ◽  
Nmr Spectra ◽  
Exchange Process ◽  
Kcal Mole ◽  
Line Shapes ◽  
Calculated Line ◽  
C Nmr

The 13C NMR spectra of the ethylaluminium compounds [Al(C2H5)xCl3_x]2 x = 1, 1,5, 2 and 3 are presented and factors governing the temperature dependence of the line shape are discussed. The exchange reaction of terminal ethyl groups for chlorine ligands and ethyl ligands, resp., in ethylaluminium-sesquichloride was investigated by fitting the calculated line shapes to the observed spectra.The energy of activation of this exchange process was determined as to be 12,3 ‡ 1,5 kcal/mole. The synthesis of 13C2-[Al(C2H5)Cl2]2 is described.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

2010 ◽  
Vol 19 (3) ◽  
pp. 036801 ◽  
Author(s):  
Wu Yu-Xin ◽  
Zhu Jian-Jun ◽  
Chen Gui-Feng ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Structural Properties ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

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