Investigation of Local Structures Around Mn Atoms in In1-xMnxAs Diluted Magnetic Semiconductors Using Exafs

1994 ◽  
Vol 375 ◽  
Author(s):  
Y. L. Soo ◽  
S. W. Huang ◽  
Z. H. Ming ◽  
Y. H. Kao ◽  
H. Munekata ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Impurities ◽  
X Ray ◽  
Local Structures ◽  
Substitutional Doping ◽  
Diluted Magnetic ◽  
X Ray Absorption ◽  
Substrate Temperatures ◽  
Mn Concentration

AbstractExtended x-ray absorption fine structure (EXAFS) techniques have been used to investigate the local structures in Inl-xMnxAs films grown by molecular beam epitaxy (MBE) under different processing conditions. For samples grown at low substrate temperatures (near 200°C) or with a low Mn concentration (about 1 atomic%), the Mn atoms can substitute for In in the InAs host, thus indicating that III-V diluted magnetic semiconductors (DMS) can indeed be prepared by substitutional doping of magnetic impurities. On the other hand, substitution dose not take place in high Mn concentration (above 10%) samples grown at high substrate temperatures (around 300°C); these samples contain a large amount of MnAs clusters and become ferromagnetic

Ferromagnetism and Luminescence of Diluted Magnetic Semiconductors GaGdN and AlGdN

2008 ◽  
Vol 1111 ◽  
Author(s):  
Shuichi Emura ◽  
Masahiro Takahashi ◽  
Hiroyuki Tambo ◽  
Akira Suzuki ◽  
Tetsuya Nakamura ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Circular Dichroism ◽  
Peak Position ◽  
Magnetic Characteristics ◽  
Sharp Line ◽  
X Ray ◽  
Diluted Magnetic ◽  
X Ray Absorption

AbstractThe magnetic characteristics of the dilute magnetic system GaGdN are investigated by mainly soft-X-ray magnetic circular dichroism (MCD) in energy range of 1160 – 1240 eV. The strong MCD signals up to 30 % at 15K are observed. The temperature dependence of its intensity is not on simple Curie-Weiss curve and depicts three-step curve. A step around 40 – 100K suggests a new magnetic phase. The luminescence spectrum of GaGdN at low temperature is divided into three parts consisting of two broad bands around 432 nm and 503 nm and a sharp peak at 652 nm. This sharp line is assigned to the intra-transition of f – f orbital owing to the weak temperature dependence of the intensity and peak position. AlGdN grown by molecular beam epitaxy produces luminescence at 318.5 nm. X-ray absorption fine structure is examined to survey the occupancy of the Gd ion in the grown specimens.

scholarly journals X-Ray Magnetic Dichroism in the Cobalt-Doped Indium Tin Oxide from First Principle Calculations

2013 ◽  
Vol 2013 ◽  
pp. 1-10 ◽  
Author(s):  
V. N. Antonov ◽  
L. V. Bekenov ◽  
L. P. Germash ◽  
N. A. Plotnikov
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
First Principles ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Circular Dichroism ◽  
X Ray ◽  
Magnetic Dichroism ◽  
Diluted Magnetic ◽  
X Ray Absorption

The electronic structure of the Co-doped indium tin oxide (ITO) diluted magnetic semiconductors (DMSs) were investigated theoretically from first principles, using the fully relativistic Dirac linear muffin-tin orbital band structure method. The X-ray absorption spectra (XAS) and X-ray magnetic circular dichroism (XMCD) spectra at the Co L3, In M2, Sn M2, and O K edges were investigated theoretically from first principles. The origin of the XMCD spectra in these compounds was examined. The calculated results are compared with available experimental data.

Localization of the dopant in Ge:Mn diluted magnetic semiconductors by x-ray absorption at the Mn K edge

2010 ◽  
Vol 22 (21) ◽  
pp. 216006 ◽  
Author(s):  
R Gunnella ◽  
L Morresi ◽  
N Pinto ◽  
A Di Cicco ◽  
L Ottaviano ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
X Ray ◽  
Diluted Magnetic ◽  
X Ray Absorption

Photoemission and X-ray absorption studies of the electronic structure of GaN-based diluted magnetic semiconductors

2006 ◽  
Vol 243 (7) ◽  
pp. 1696-1700 ◽  
Author(s):  
J. I. Hwang ◽  
Y. Ishida ◽  
M. Kobayashi ◽  
Y. Osafune ◽  
T. Mizokawa ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
X Ray ◽  
Absorption Studies ◽  
Diluted Magnetic ◽  
X Ray Absorption

X-ray absorption spectroscopy of transition-metal doped diluted magnetic semiconductors Zn1−xMxO

2004 ◽  
Vol 95 (7) ◽  
pp. 3573-3575 ◽  
Author(s):  
J. Okabayashi ◽  
K. Ono ◽  
M. Mizuguchi ◽  
M. Oshima ◽  
Subhra Sen Gupta ◽  
...  
Keyword(s):  
Transition Metal ◽  
Absorption Spectroscopy ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
X Ray ◽  
Diluted Magnetic ◽  
Metal Doped ◽  
X Ray Absorption

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

2006 ◽  
Vol 243 (7) ◽  
pp. 1692-1695 ◽  
Author(s):  
O. Sancho-Juan ◽  
A. Cantarero ◽  
G. Martínez-Criado ◽  
D. Olguín ◽  
N. Garro ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
X Ray ◽  
Diluted Magnetic ◽  
X Ray Absorption

scholarly journals The Magnetic Domain Structure Properties in Diluted Magnetic Semiconductors

2020 ◽  
Vol 65 (10) ◽  
pp. 881
Author(s):  
V. A. Stephanovich ◽  
Yu. G. Semenov
Keyword(s):  
Domain Structure ◽  
Diluted Magnetic Semiconductors ◽  
Critical Thickness ◽  
Magnetic Semiconductors ◽  
Finite Thickness ◽  
Critical Ratio ◽  
Magnetic Impurities ◽  
Stripe Domain ◽  
Diluted Magnetic ◽  
P Type

We present a comprehensive analysis of the domain structure formation in the ferromagneticphase of diluted magnetic semiconductors (DMS) of the p-type. Our analysis is carried outon the base of the effective magnetic free energy of DMS calculated by us earlier. This freeenergy, substituting DMS (a disordered magnet) by an effective ordered substance, permits usto apply the standard phenomenological approach to the domain structure calculation. Usingthe coupled system of Maxwell equations with those obtained by the minimization of the freeenergy functional, we show the existence of the critical ratio vcr of concentration of chargecarriers and magnetic ions such that the sample critical thickness Lcr (such that the sampleis monodomain at L < Lcr) diverges as v → vcr. At v > vcr, the sample is monodomain. Thisfeature makes DMS different from conventional ordered magnets, as it gives a possibility tocontrol the sample critical thickness and the emerging domain structure period by a variationof v. As the concentration of magnetic impurities grows, vcr → ∞, restoring a conventionalbehavior of ordered magnets. Above facts have been revealed by the examination of the tem-perature of the transition to an inhomogeneous magnetic state (stripe domain structure) inthe slab of a p-type DMS with finite thickness L. Our theory can be easily generalized for anarbitrary disordered magnet.

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