A Thermal Spike Model of the Amorphization of Insulators by High-Energy Heavy-Ion Irradiation

1994 ◽  
Vol 373 ◽  
Author(s):  
G. Szenes

AbstractA model based on the assumption of a Gaussian temperature distribution in the thermal spike well accounts for the basic features of latent track formation. In good agreement with the observations it predicts a logarithmic variation of the track size for 2.7≥Se/Set≥1 and a linear variation for Se/Set≥2.7, where Se is the electronic stopping power and Set is a threshold value. The model also provides a quantitative relation between Set and the thermal properties of the target. A weak temperature dependence of track formation is predicted in agreement with the experiments.

2006 ◽  
Vol 3 (5) ◽  
pp. 320-326
Author(s):  
I. V. Amirkhanov ◽  
A. Yu. Didyk ◽  
N. R. Sarker ◽  
I. Sarhadov ◽  
V. K. Semina ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (64) ◽  
pp. 58950-58956 ◽  
Author(s):  
Vantari Siva ◽  
Abdelhak Chettah ◽  
Biswarup Satpati ◽  
S. Ojha ◽  
D. Kanjilal ◽  
...  

Enhanced surface and interface diffusion in Ni–Bi bilayers has been observed using 100 MeV Au ion irradiation. The experimental observations were demonstrated using thermal spike model calculations.


1997 ◽  
Vol 248-249 ◽  
pp. 21-32 ◽  
Author(s):  
C. Dufour ◽  
S. Hemon ◽  
F. Gourbilleau ◽  
E. Paumier ◽  
E. Dooryhee

1990 ◽  
Vol 202 ◽  
Author(s):  
Dale E. Alexander ◽  
Gary S. Was

ABSTRACTA thermal spike model has been developed to describe the phenomenon of ion irradiation-induced grain growth in metal alloy thin films. In single phase films where the driving force for grain growth is the reduction of grain boundary curvature, the model shows that ion-induced grain boundary mobility, Mion, is proportional to the quantity FD2/ΔHcoh3, where FD is the ion and recoil energy deposited in nuclear interactions and ΔHcoh is the cohesive energy of the element or alloy. Experimental grain growth results from ion irradiated coevaporated binary alloy films compare favorably with model predictions.


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