Enhanced surface and interface diffusion in Ni–Bi bilayers by swift heavy ion irradiation

RSC Advances ◽  
2016 ◽  
Vol 6 (64) ◽  
pp. 58950-58956 ◽  
Author(s):  
Vantari Siva ◽  
Abdelhak Chettah ◽  
Biswarup Satpati ◽  
S. Ojha ◽  
D. Kanjilal ◽  
...  

Enhanced surface and interface diffusion in Ni–Bi bilayers has been observed using 100 MeV Au ion irradiation. The experimental observations were demonstrated using thermal spike model calculations.

1994 ◽  
Vol 373 ◽  
Author(s):  
G. Szenes

AbstractA model based on the assumption of a Gaussian temperature distribution in the thermal spike well accounts for the basic features of latent track formation. In good agreement with the observations it predicts a logarithmic variation of the track size for 2.7≥Se/Set≥1 and a linear variation for Se/Set≥2.7, where Se is the electronic stopping power and Set is a threshold value. The model also provides a quantitative relation between Set and the thermal properties of the target. A weak temperature dependence of track formation is predicted in agreement with the experiments.


1998 ◽  
Vol 540 ◽  
Author(s):  
M. L. Jenkins ◽  
P. Mavani ◽  
S. Müller ◽  
C. Abromeit

AbstractThe influence of the irradiation temperature Tirr on the development of disordered zones produced at displacement cascades in Ni3A1 by heavy-ion irradiation with 50 keV Ta+ and 300 keV Ni+ ions has been investigated. The normalised number density (yield) of disordered zones for 300 keV Ni+ irradiation showed a sharp fall between Tirr= 373 K and 573 K. For 50 keV Ni+ irradiation there was a similar fall between 573 K and 673 K. The mean diameters of the disordered zones produced by 300 keV Ni+ ions decreased by about 2 nm between room temperature and 573 K, and there was a tendency for larger zones to become more regular in shape. For 50 keV Ta+ ions, a similar trend was observed between 573 K and 873 K. An annealing experiment confirmed that disordered zones produced at lower temperatures were stable up to a temperature of about 673 K, showing that these trends cannot be due to thermal annealing of disordered zones. The experimental results are consistent with an increased tendency for reordering at the peripheries of disordered zones, due to the increased lifetimes of thermal spikes at higher irradiation temperatures.


1997 ◽  
Vol 248-249 ◽  
pp. 21-32 ◽  
Author(s):  
C. Dufour ◽  
S. Hemon ◽  
F. Gourbilleau ◽  
E. Paumier ◽  
E. Dooryhee

2006 ◽  
Vol 3 (5) ◽  
pp. 320-326
Author(s):  
I. V. Amirkhanov ◽  
A. Yu. Didyk ◽  
N. R. Sarker ◽  
I. Sarhadov ◽  
V. K. Semina ◽  
...  

1990 ◽  
Vol 202 ◽  
Author(s):  
Dale E. Alexander ◽  
Gary S. Was

ABSTRACTA thermal spike model has been developed to describe the phenomenon of ion irradiation-induced grain growth in metal alloy thin films. In single phase films where the driving force for grain growth is the reduction of grain boundary curvature, the model shows that ion-induced grain boundary mobility, Mion, is proportional to the quantity FD2/ΔHcoh3, where FD is the ion and recoil energy deposited in nuclear interactions and ΔHcoh is the cohesive energy of the element or alloy. Experimental grain growth results from ion irradiated coevaporated binary alloy films compare favorably with model predictions.


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