A Comparison of Transient Annealing Methods for Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
R. E. Harper ◽  
C. J. Sofield ◽  
I. H. Wilson ◽  
K. G. Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Light Element ◽  
Metal Films ◽  
Silicon Wafers ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Surface Textures ◽  
Good Crystalline Quality ◽  
Cobalt Silicides

AbstractNickel and cobalt silicides have been formed by raster-scanned electron beam and flash-lamp irradiation of thin metal films on single crystal (100) and (111) silicon wafers. RBS and channelling measurements indicate that the NiSi2 is epitaxial and of good crystalline quality (Xmin 4% on (111)); epitaxial CoSi2 was more difficult to form and of somewhat poorer quality. The elastic recoil technique has been used to determine bulk and interfacial light element contamination. These measurements have been correlated with resistivity and SEM studies of the surface textures.

Boron Redistribution During Transient Thermal Metal Silicide Growth on Si

1984 ◽  
Vol 35 ◽  
Author(s):  
C.J. Sofield ◽  
R.E. Harper ◽  
P.J. Rosser
Keyword(s):  
Single Crystal ◽  
Heavy Ion ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Silicide Growth ◽  
Transient Thermal

AbstractWe have used the heavy ion elastic recoil technique to study B distribution changes during Co and Ti di silicide formation on B implanted single crystal Si wafers. B diffuses to the interface of TiSi2 and Si and to the surface of CoSi2.

scholarly journals The Influence of Wire Speed on Phase Transitions and Residual Stress in Single Crystal Silicon Wafers Sawn by Resin Bonded Diamond Wire Saw

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 429
Author(s):  
Tengyun Liu ◽  
Peiqi Ge ◽  
Wenbo Bi
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Phase Transitions ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon ◽  
Diamond Wire

Lower warp is required for the single crystal silicon wafers sawn by a fixed diamond wire saw with the thinness of a silicon wafer. The residual stress in the surface layer of the silicon wafer is the primary reason for warp, which is generated by the phase transitions, elastic-plastic deformation, and non-uniform distribution of thermal energy during wire sawing. In this paper, an experiment of multi-wire sawing single crystal silicon is carried out, and the Raman spectra technique is used to detect the phase transitions and residual stress in the surface layer of the silicon wafers. Three different wire speeds are used to study the effect of wire speed on phase transition and residual stress of the silicon wafers. The experimental results indicate that amorphous silicon is generated during resin bonded diamond wire sawing, of which the Raman peaks are at 178.9 cm−1 and 468.5 cm−1. The ratio of the amorphous silicon surface area and the surface area of a single crystal silicon, and the depth of amorphous silicon layer increases with the increasing of wire speed. This indicates that more amorphous silicon is generated. There is both compressive stress and tensile stress on the surface layer of the silicon wafer. The residual tensile stress is between 0 and 200 MPa, and the compressive stress is between 0 and 300 MPa for the experimental results of this paper. Moreover, the residual stress increases with the increase of wire speed, indicating more amorphous silicon generated as well.

scholarly journals HRTEM image-stitching for measurement of distances

2020 ◽  
Vol 5 (1) ◽  
pp. 13-17
Author(s):  
György Zoltán Radnóczi ◽  
Zoltán Herceg ◽  
Tamás Rafael Kiss
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Single Crystal ◽  
Image Stitching ◽  
Hrtem Image ◽  
Lattice Image ◽  
High Resolution Tem ◽  
Better Than

AbstractVery accurate measurement of distances in the order of several µm is demonstrated on a single crystal Si sample by counting the lattice fringes on stitched high resolution TEM/STEM images. Stitching of TEM images commonly relies on correspondence points found in the image, however, the nearly perfect periodic nature of a lattice image renders such a procedure very unreliable. To overcome this difficulty artificial correspondence points are created on the sample using the electron beam. An accuracy better than 1% can be reached while measuring distances in the order of 1 µm. A detailed description of the process is provided, and its usability for accurately measuring large distances is discussed in detail.

Chromium silicide formation with multiple electron beam pulses

1986 ◽  
Vol 140 (1) ◽  
pp. 163-166 ◽  
Author(s):  
E. D'Anna ◽  
G. Leggieri ◽  
A. Luches ◽  
G. Majni
Keyword(s):  
Electron Beam ◽  
Silicide Formation ◽  
Chromium Silicide

scholarly journals On the correctness of mathematical models of time-of-flight cathodoluminescence of direct-gap semiconductors

2019 ◽  
Vol 30 ◽  
pp. 07014
Author(s):  
Mikhail A. Stepovich ◽  
Dmitry V. Turtin ◽  
Elena V. Seregina ◽  
Veronika V. Kalmanovich
Keyword(s):  
Electron Beam ◽  
Gallium Nitride ◽  
Initial Data ◽  
Mathematical Models ◽  
Single Crystal ◽  
Three Dimensional ◽  
Time Of Flight ◽  
Semiconductor Material ◽  
Two Dimensional ◽  
Cathodoluminescence Intensity

Two-dimensional and three-dimensional mathematical models of diffusion and cathodoluminescence of excitons in single-crystal gallium nitride excited by a pulsating sharply focused electron beam in a homogeneous semiconductor material are compared. The correctness of these models has been carried out, estimates have been obtained to evaluate the effect of errors in the initial data on the distribution of the diffusing excitons and the cathodoluminescence intensity.

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