Boron Redistribution During Transient Thermal Metal Silicide Growth on Si

1984 ◽  
Vol 35 ◽  
Author(s):  
C.J. Sofield ◽  
R.E. Harper ◽  
P.J. Rosser
Keyword(s):  
Single Crystal ◽  
Heavy Ion ◽  
Metal Silicide ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Silicide Growth ◽  
Transient Thermal

AbstractWe have used the heavy ion elastic recoil technique to study B distribution changes during Co and Ti di silicide formation on B implanted single crystal Si wafers. B diffuses to the interface of TiSi2 and Si and to the surface of CoSi2.

A Comparison of Transient Annealing Methods for Silicide Formation

1984 ◽  
Vol 37 ◽  
Author(s):  
R. E. Harper ◽  
C. J. Sofield ◽  
I. H. Wilson ◽  
K. G. Stephens
Keyword(s):  
Electron Beam ◽  
Single Crystal ◽  
Light Element ◽  
Metal Films ◽  
Silicon Wafers ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Surface Textures ◽  
Good Crystalline Quality ◽  
Cobalt Silicides

AbstractNickel and cobalt silicides have been formed by raster-scanned electron beam and flash-lamp irradiation of thin metal films on single crystal (100) and (111) silicon wafers. RBS and channelling measurements indicate that the NiSi2 is epitaxial and of good crystalline quality (Xmin 4% on (111)); epitaxial CoSi2 was more difficult to form and of somewhat poorer quality. The elastic recoil technique has been used to determine bulk and interfacial light element contamination. These measurements have been correlated with resistivity and SEM studies of the surface textures.

Composition and Structure of Epitaxial CaF2 Layers at the First Stages of Their Growth on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
R. Würz ◽  
W. Bohne ◽  
W. Fuhs ◽  
J. Röhrich ◽  
M. Schmidt ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Stoichiometric Composition ◽  
Interface Reaction ◽  
Heavy Ion ◽  
Interface Layer ◽  
Buffer Layers ◽  
Ex Situ ◽  
Elastic Recoil ◽  
Detection Analysis

AbstractCaF2 films with thicknesses in the monolayer range (<20 Å) were grown on Si(111) by evaporation from a CaF2 source at UHV conditions. They were characterized ex-situ by Heavy-Ion Elastic Recoil Detection Analysis (HI-ERDA), RBS/Channeling, X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM). The F/Ca ratio of the films was found to depend on the growth temperature Ts and to deviate appreciably from the stoichiometric composition (F/Ca=2). Due to an interface reaction which leads to a CaF-interface layer a change from polycrystalline to epitaxial growth occurs at Ts=450°C. At higher temperature film growth started with a closed layer of CaF on top of which CaF2 layers with an increasing fraction of pinholes were formed. By means of a two-step process at different temperatures, the amount of pinholes could be strongly reduced. It was found, that buffer layers of CaF2 with a CaF interface layer introduced in Au/p-Si contacts enhance the barrier height by as much as 0.36eV to values of 0.64eV.

An interface — marker technique applied to the study of metal silicide growth

1980 ◽  
Vol 168 (1-3) ◽  
pp. 491-497 ◽  
Author(s):  
J.E.E. Baglin ◽  
F.M. D'Heurle ◽  
W.N. Hammer ◽  
S. Petersson
Keyword(s):  
Metal Silicide ◽  
Silicide Growth

scholarly journals Formation of metal silicide by swift heavy ion induced mixing at Mn/Si interface

2014 ◽  
Vol 3 (3) ◽  
pp. 257-263 ◽  
Author(s):  
Reena Verma ◽  
Chhagan Lal ◽  
Indra Prabha Jain
Keyword(s):  
Heavy Ion ◽  
Metal Silicide ◽  
Swift Heavy Ion

Transmission Electron Microscopy Observation of 11MEV B5+ Ion Irradiation in Bi2Sr2CaCu2O7-x Single Crystal

1999 ◽  
Vol 5 (S2) ◽  
pp. 758-759
Author(s):  
W.L. Zhou ◽  
Y. Sasaki ◽  
Y. Ikuhara ◽  
C.J.O’Connor
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Target Material ◽  
Heavy Ion ◽  
Zone Melting ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Different Types ◽  
Induced Defects ◽  
Irradiation Induced Defects

Artificial defects generated by ion irradiation have been considered an efficient method to enhance the critical current density in superconducting materials. The mechanism of producing defects as flux pining centers is still an important issue since the efficiency of irradiation-induced defects in flux pinning strongly depends on their microstructures. Different types of defects have been found in heavy ion irradiation. However, there are few results that show light ion irradiation due to the target material selected, the type of light ion and energy, and the incident ion angle. Another factor is the difficulty of cross-sectional sample preparation. In this paper, a single crystal Bi2Sr2CaCu2O7-x with 11 MeV B5+ ion irradiation was observed by transmission electron microscope (TEM) from both plan and cross-sectional view.The Bi2Sr2CaCu2O7-x single crystals used for ion irradiation were prepared using the floating-zone melting method. The crystals were cleaved into thin sheets of about 20 μm thickness along the a-b plane and cut to about 2mmx2mm size.

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