Luminescence Properties of InxGa1-xAs-GaAs Strained-Layer Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
N. G. Anderson ◽  
W. D. Laidig ◽  
G. Lee ◽  
Y. Lo ◽  
M. Ozturk
Keyword(s):  
Layer Thickness ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Gaas Layer ◽  
Biaxial Compression ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Compression Data ◽  
Strained Layer Superlattices ◽  
Hole Transition

AbstractThe low-temperature (20K) photoluminescence of InxGa1-xAs and InxGal-xAs - GaAs strained-layer superlattices (SLS's) grown by molecular beam epitaxy (MBE) is investigated. Data are presented for thick (bulk) epitaxial layers grown directly on GaAs and for relatively-thin (˜600Å) InxGa1-xAs layers under biaxial compression. Data are also presented for two series of SLS's. In the two series of SLS's, the InxGa1-xAs layer thickness (Lz) is held constant while only the GaAs layer thickness (LB) is varied. The photoluminescence (PL) spectra of the crystals are useful in analyzing the effects of biaxial strain, carrier confinement, and barrier layer thicknesses in SLS's. Results are compared with calculations based upon a modified Kronig-Penney model which incorporates the appropriate deformation potentials for SLS analysis. This type of analysis, in agreement with experimental data, suggests that the electron-to-light-hole transition can be lower in energy than the electron-to-heavy-hole transition in SLS's, depending upon layer thickness and crystal composition.

Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

2013 ◽  
Vol 64 ◽  
pp. 543-551 ◽  
Author(s):  
Shaojian Su ◽  
Dongliang Zhang ◽  
Guangze Zhang ◽  
Chunlai Xue ◽  
Buwen Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices

scholarly journals The Structure of GaAs/Si(211) Heteroepitaxial Layers

1987 ◽  
Vol 91 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
E.R. Weber ◽  
J. Washburn ◽  
T.Y. Liu ◽  
H. Kroemer
Keyword(s):  
Buffer Layer ◽  
Surface Preparation ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Gaas Buffer Layer ◽  
Graded Layers ◽  
Strained Layer Superlattices

ABSTRACTGallium arsenide films grown on (211)Si by molecular-beam epitaxy have been investigated using transmission electron microscopy. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwin lamellas. Silicon surface preparation was found to play an important role on the density of defects formed at the Si/GaAs interface.Two different types of strained-layer superlattices, InGaAs/InGaP and InGaAs/GaAs, were applied either directly to the Si substrate, to a graded layer (GaP-InGaP), or to a GaAs buffer layer to stop the defect propagation into the GaAs films. Applying InGaAs/GaAs instead of InGaAs/InGaP was found to be more effective in blocking defect propagation. In all cases of strained-layer superlattices investigated, dislocation propagation was stopped primarily at the top interface between the superlattice package and GaAs. Graded layers and unstrained AlGaAs/GaAs superlattices did not significantly block dislocations propagating from the interface with Si. Growing of a 50 nm GaAs buffer layer at 505°C followed by 10 strained-layer superlattices of InGaAs/GaAs (5 nm each) resulted in the lowest dislocation density in the GaAs layer (∼;5×l07/cm2) among the structures investigated. This value is comparable to the recently reported density of dislocations in the GaAs layers grown on (100)Si substrates [8]. Applying three sets of the same strained layersdecreased the density of dislocations an additional ∼2/3 times.

Raman Study of Strain and Confinement Effects in Si/Ge Strained Layer Superlattices Under Hydrostatic Pressure

1991 ◽  
Vol 220 ◽  
Author(s):  
Zhifeng Sui ◽  
Irving P. Herman ◽  
Joze Bevk
Keyword(s):  
Hydrostatic Pressure ◽  
Raman Scattering ◽  
Optical Phonon ◽  
Phonon Frequency ◽  
Optical Phonons ◽  
Biaxial Strain ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Raman Study ◽  
Strained Layer Superlattices

ABSTRACTThe effects of strain and confinement on optical phonons in a Si12Ge4 strained layer superlattice grown by MBE on c-Si (001) were studied as a function of hydrostatic pressure (T = 295 K) using Raman scattering. The change of phonon frequency with pressure, dω/dP, for the principal quasi-confined LO mode in the Ge layers is found to be significantly smaller than that for bulk crystalline Ge because the magnitude of biaxial strain decreases in the Ge layers with added pressure and because the Grüneisen parameter of the confined mode is smaller than that of the Γ-point optical phonon. More generally, it is noted that the magnitude of biaxial strain in many strained layer superlattices initially decreases with the application of hydrostatic pressure, making the structures more stable.

Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy

1992 ◽  
Vol 61 (13) ◽  
pp. 1540-1542 ◽  
Author(s):  
Jie Cui ◽  
Hai‐Long Wang ◽  
Fu‐Xi Gan ◽  
Xu‐Guang Huang ◽  
Zhi‐Gang Cai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Strained Layer ◽  
Strained Layer Superlattices

Suppression of Interfacial Mixing by Sb Deposition in Si/Ge Strained-Layer Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
K. Fujita ◽  
S. Fukatsu ◽  
H. Yaguchi ◽  
T. Igarashi ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Exchange Model ◽  
Strained Layer ◽  
Interfacial Mixing ◽  
Strained Layer Superlattices

We have studied interfacial mixing of Si/Ge strained-layer superlattices during Si molecular beam epitaxy. The mixing has been shown to be primarily due to the surface segregation of Ge atoms during Si overlayer growth. It has been found that only the Ge atoms on the topmost Ge layer dominantly segregate to the growing surface. It has also been found that the surface segregation of Ge is effectively suppressed by depositing Sb atoms on the Ge layers. It has been demonstrated that Si/Ge superlattices with abrupt Si/Ge interfaces can be grown by depositing Sb. The two state exchange model is used to discuss the surface segregation of Ge and the suppression of the segregation by Sb deposition.

scholarly journals MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

1993 ◽  
Vol 42 (7) ◽  
pp. 1121
Author(s):  
ZHOU GUO-LIANG ◽  
SHENG CHI ◽  
FAN YONG-LIANG ◽  
JIANG WEI-DONG ◽  
YU MING-RBN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Strained Layer Superlattices
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