scholarly journals MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES

1993 ◽  
Vol 42 (7) ◽  
pp. 1121
Author(s):  
ZHOU GUO-LIANG ◽  
SHENG CHI ◽  
FAN YONG-LIANG ◽  
JIANG WEI-DONG ◽  
YU MING-RBN
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Strained Layer Superlattices

Growth of Ge1−xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy

2013 ◽  
Vol 64 ◽  
pp. 543-551 ◽  
Author(s):  
Shaojian Su ◽  
Dongliang Zhang ◽  
Guangze Zhang ◽  
Chunlai Xue ◽  
Buwen Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Strained Layer Superlattices

Picosecond transient photoluminescence spectra of ZnSe‐ZnS strained‐layer superlattices grown on GaAs(001) by molecular beam epitaxy

1992 ◽  
Vol 61 (13) ◽  
pp. 1540-1542 ◽  
Author(s):  
Jie Cui ◽  
Hai‐Long Wang ◽  
Fu‐Xi Gan ◽  
Xu‐Guang Huang ◽  
Zhi‐Gang Cai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Spectra ◽  
Strained Layer ◽  
Strained Layer Superlattices

All solid source molecular beam epitaxy growth of 1.35 µm wavelength strained-layer GaInAsP quantum well laser

1995 ◽  
Vol 31 (10) ◽  
pp. 797-799 ◽  
Author(s):  
M. Toivonen ◽  
J. Näppi ◽  
A. Salokatve ◽  
M. Pessa ◽  
M. Jalonen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer ◽  
Quantum Well Laser

Suppression of Interfacial Mixing by Sb Deposition in Si/Ge Strained-Layer Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
K. Fujita ◽  
S. Fukatsu ◽  
H. Yaguchi ◽  
T. Igarashi ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Exchange Model ◽  
Strained Layer ◽  
Interfacial Mixing ◽  
Strained Layer Superlattices

We have studied interfacial mixing of Si/Ge strained-layer superlattices during Si molecular beam epitaxy. The mixing has been shown to be primarily due to the surface segregation of Ge atoms during Si overlayer growth. It has been found that only the Ge atoms on the topmost Ge layer dominantly segregate to the growing surface. It has also been found that the surface segregation of Ge is effectively suppressed by depositing Sb atoms on the Ge layers. It has been demonstrated that Si/Ge superlattices with abrupt Si/Ge interfaces can be grown by depositing Sb. The two state exchange model is used to discuss the surface segregation of Ge and the suppression of the segregation by Sb deposition.

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