Roughening by Ion Bombardment: A Stochastic Continuum Equation

1994 ◽  
Vol 367 ◽  
Author(s):  
R. Cuerno ◽  
A.-L. Barabasi
Keyword(s):  
Nonlinear Equation ◽  
Penetration Depth ◽  
Ion Bombardment ◽  
Physical Parameters ◽  
Angle Of Incidence ◽  
Scaling Properties ◽  
Cascade Theory ◽  
Linear Cascade ◽  
Continuum Equation ◽  
Experimental Parameters

AbstractIn the context of linear cascade theory, we derive a stochastic nonlinear equation to describe the evolution and scaling properties of surfaces eroded by ion bombardment. The coefficients appearing in the equation are calculated explicitly in terms of the physical parameters characterizing the sputtering process. We find that transitions may take place between various scaling behaviors when experimental parameters such as the angle of incidence of the incoming ions or their average penetration depth, are varied.

Fractal and Non-Fractal Surfaces in Ion Sputtering

1995 ◽  
Vol 407 ◽  
Author(s):  
A.-L. Barabási ◽  
R. Cuerno
Keyword(s):  
Nonlinear Equation ◽  
Penetration Depth ◽  
Experimental Studies ◽  
Ion Bombardment ◽  
Physical Parameters ◽  
Angle Of Incidence ◽  
Ion Sputtering ◽  
Scaling Properties ◽  
Fractal Surfaces ◽  
Experimental Parameters

ABSTRACTRecently a number of experimental studies focusing on the scaling properties of surfaces eroded by ion bombardment provided apparently contradictory results. A number of experiments report the observation of self-affine fractal surfaces, while others provide evidence about the development of a non-fractal periodic ripple structure. To explain these discrepancies, here we derive a stochastic nonlinear equation that describes the evolution and scaling properties of surfaces eroded by ion bombardment. The coefficients appearing in the equation can be calculated explicitly in terms of the physical parameters characterizing the sputtering process. We find that transitions may take place between various scaling behaviors when experimental parameters, such as the angle of incidence of the incoming ions or their average penetration depth, are varied.

Grazing Incidence X-ray Fluorescence Analysis with Monochromatic Radiation

1990 ◽  
Vol 34 ◽  
pp. 71-80 ◽  
Author(s):  
Manfred Schuster
Keyword(s):  
Penetration Depth ◽  
Fluorescence Intensity ◽  
Dopant Concentration ◽  
Fluorescence Analysis ◽  
Analytical Description ◽  
Grazing Incidence ◽  
Concentration Profiles ◽  
Angle Of Incidence ◽  
X Ray ◽  
Si Wafer

AbstractX-ray fluorescence excited by a monochromatic collimated Mo-Kα beam at grazing incidence is measured as a function of the angle of incidence. Monochromatic excitation guarantees a well-defined penetration depth and enables a simple analytical description of the fluorescence intensity. This method is applied to a system of thin Cu and Ti metallization layers on a Si wafer and to As dopant concentration profiles in Si wafers.Thereby, the effect of annealing can be analyzed non-destructively.

Linear Cascade Theory for Inhomogeneous Targets

1989 ◽  
Vol 112 (1) ◽  
pp. 263-272 ◽  
Author(s):  
M. Posselt
Keyword(s):  
Cascade Theory ◽  
Linear Cascade

Interface broadening due to Ar+ ion bombardment measured on Co/Cu multilayer at grazing angle of incidence

2003 ◽  
Vol 21 (3) ◽  
pp. 553-557 ◽  
Author(s):  
A. Barna ◽  
M. Menyhard ◽  
G. Zsolt ◽  
A. Koos ◽  
A. Zalar ◽  
...  
Keyword(s):  
Grazing Angle ◽  
Ion Bombardment ◽  
Angle Of Incidence

Unexpectedly high sputtering yield of carbon at grazing angle of incidence ion bombardment

2005 ◽  
Vol 98 (2) ◽  
pp. 024901 ◽  
Author(s):  
A. Barna ◽  
M. Menyhard ◽  
L. Kotis ◽  
Gy. J. Kovacs ◽  
G. Radnoczi ◽  
...  
Keyword(s):  
Grazing Angle ◽  
Ion Bombardment ◽  
Angle Of Incidence ◽  
Sputtering Yield

Influence of Torpedo Piles Parameters When Assessing Final Penetration Depths

2020 ◽  
Author(s):  
Leonardo Sant’Anna do Nascimento
Keyword(s):  
Numerical Simulations ◽  
Penetration Depth ◽  
Statistical Treatment ◽  
Basic Question ◽  
Base Case ◽  
Physical Parameters ◽  
Data Generation ◽  
Case Scenario ◽  
Base Case Scenario ◽  
Penetration Depths

Abstract This paper has been influenced by a basic question: assuming a torpedo pile launching in a base case scenario, which parameters, when not well controlled, would affect more the pile final penetration depth? Aiming to provide an answer to this question, the methodology adopted in this study assumes the application of numerical simulations and statistical analyses in order to quantify the influence of the uncertainties of such parameters in the final penetration depth. From the assessment, one may expect responses in terms of which parameters shall be better controlled during a launching procedure in order to reduce the uncertainties associated to the target depth. For the development of the study, a simplified approach for the dynamic numerical analyses has been adopted in order to allow a massive data generation for the statistical treatment. The main parameters associated to the torpedo pile and the launching scenario have been generated taking into account their uncertainties. The Monte Carlo method has been considered and statistical treatment has been applied to quantify the influence of the parameters in the final penetration depth. The results demonstrate that apply the simplified method described in the paper is adequate to simulate both the subsea free fall and the pile driving phases to obtain the final penetration depths. The torpedo mass has been found as the physical parameter which influences more the final penetration depth. However, the study demonstrates that, given a standard launching procedure assessed by numerical simulations, uncertainties on physical parameters are much less significant for the final penetration depth than the uncertainties inherent to the assumptions and data applied to simulate the soil damping.

Micro-effects of resputtering due to negative ion bombardment of growing thin films

1993 ◽  
Vol 8 (8) ◽  
pp. 1938-1957 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Deposition Time ◽  
Ion Bombardment ◽  
Negative Ion ◽  
Angle Of Incidence ◽  
Etch Pits ◽  
Surface Features ◽  
Number Of Factors ◽  
Average Angle

Negative ion bombardment of an evolving thin film can cause changes in the film's surface due to resputtering of the already deposited material. Through the study of rf-sputtered perovskite (BaTiO3) thin films, we have found that surface micro-effects, i.e., changes in the surface morphology of the films at the μm-scale level, are dependent on the deposition conditions. Ripples, cones, ridges, and etch pits of various shapes and sizes were all observed on growing films. A transformation of the morphology of the top surface of the film as a function of both deposition time and location on the substrate has been observed. The type of surface morphology found at any point was found to be dependent on a number of factors, including deposition rates, flux and energy of bombarding ions, and the average angle of incidence of the bombarding ions. We have developed a qualitative model for the formation of these surface features, based on the resputtering yield as a function of the average angle of incidence of the bombarding ions. The model suggests that surface nonuniformities, often ripples, initiate the development of etch pits. Other mechanisms of the surface morphology development (such as clustering) are used to explain the formation of surface features other than etch pits.

THE EFFECT OF CRYSTALLINITY AND BOMBARDMENT DOSE ON THE PENETRATION OF 40-keV XENON IONS IN IONIC CRYSTALS AND CERAMICS

1966 ◽  
Vol 44 (11) ◽  
pp. 2905-2914 ◽  
Author(s):  
J. L. Whitton ◽  
Hj. Matzke
Keyword(s):  
Radiation Damage ◽  
Single Crystals ◽  
Penetration Depth ◽  
Incident Beam ◽  
Ion Bombardment ◽  
Fused Silica ◽  
Ionic Crystals ◽  
Chemical Dissolution ◽  
Metal Single Crystals ◽  
Oriented Parallel

The range and depth distributions of 40-keV xenon ions in single crystals of NaCl, KBr, MgO, SiO2 (α quartz), in sintered UO2 and in fused silica, have been measured by the sectioning techniques of vibratory polishing and chemical dissolution. Channeling is observed in the single crystals when the [Formula: see text] is oriented parallel to the incident beam of the ions. This effect is similar to that previously reported for some metal single crystals. High bombardment doses produce a factor of 2–5 decrease in penetration depth in MgO and SiO2, materials which are known to be damaged by ion bombardment. This decrease is smaller in materials that do not show gross ion bombardment damage, such as NaCl, KBr, and UO2. Thus, the study of ranges is shown to be another means of detecting gross radiation damage.

Microstructural and Magnetic Characterization of Ni Films with In-Plane Anisotropy Induced by Ion Bombardment During Growth

1992 ◽  
Vol 268 ◽  
Author(s):  
W. A. Lewis ◽  
H. Saffari ◽  
M. Farle ◽  
E. Kay ◽  
S. B. Hagstrom
Keyword(s):  
Ion Beam ◽  
Flux Ratio ◽  
Magnetic Behavior ◽  
Ion Bombardment ◽  
Angle Of Incidence ◽  
Magnetization Direction ◽  
Direction Parallel ◽  
Plane Anisotropy ◽  
Amorphous Quartz ◽  
Quartz Substrates

ABSTRACTNi films 250 to 1500 Å thick are prepared on polished amorphous quartz substrates in ultrahigh vacuum by ion beam sputter deposition. The growing film is bombarded simultaneously with Xe+ ions at an oblique angle of incidence. The structural and magnetic modifications are studied for different film thicknesses as a function of Xe+ ion energies (50–200 eV) and relative flux of arriving Ni atoms/Xe ions at the substrate. Lattice spacings and degree of texturing are determined by x-ray diffraction. Magnetic in-plane anisotropy is determined by longitudinal magneto-optic Kerr effect measurements. Our results show that an uniaxial in-plane magnetic anisotropy is induced with the hard magnetization direction parallel to the plane of incidence of the secondary Xe+ ions, and a (111) texture with an increased plane spacing of 0.5% is measured. The microstructure of the film and the magnitude of the anisotropy is sensitive to film thickness and flux ratio. For films prepared without secondary ion bombardment, the plane spacings correspond to those for bulk Ni, and isotropic magnetic behavior is observed.

The angle of incidence dependence of ion-bombardment induced photon emission from solids

1984 ◽  
Vol 136 (1) ◽  
pp. A6
Author(s):  
J.J. Jimenez-Rodriguez ◽  
D.S. Karpuzov ◽  
D.G. Armour
Keyword(s):  
Photon Emission ◽  
Ion Bombardment ◽  
Angle Of Incidence
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