Rapid Thermal Processing and Crystallization Kinetics in Lead Zirconate Titanate (PZT) Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
E.M. Griswold ◽  
L. Weaver ◽  
I.D. Calder ◽  
M. Sayer
Keyword(s):  
Crystallization Kinetics ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Depth Profiling ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Transmission Electron ◽  
Sol Gel Process

ABSTRACTRapid thermal processing (RTP) has been used to examine the crystallization kinetics of lead zirconate titanate (PZT) fabricated using a sol gel process. Depth profiling of PZT films was performed with glancing angle x-ray diffraction and transmission electron microscopy. The films were annealed using RTP ramp rates from 10°C/s to 200°C/s and hold temperatures from 525°C to 650°C. The effect of ramp rate on the phase transformation is presented, and the growth of oriented columnar structures is demonstrated. Films subjected to RTP at 650°C for 1s using a ramp of 10°C/s began to transform to perovskite and were ferroelectric while a ramp of 100°C/s (same hold) produced a linear material which was pyrochlore. Longer hold conditions such as 650°C for 30s produced ferroelectric films with Pr in excess of 20μC/cm2 and relative permittivities ε > 600.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

Lead Zirconate Titanate Nanowire Growth Via Spin Coating in Conjunction with Sol-Gel Process

2007 ◽  
Vol 356 (1) ◽  
pp. 230-235 ◽  
Author(s):  
Jongok Kim ◽  
Yong Chan Choi ◽  
Ki-Seog Chang ◽  
Sang Don Bu
Keyword(s):  
Lead Zirconate Titanate ◽  
Spin Coating ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Nanowire Growth ◽  
Zirconate Titanate ◽  
Sol Gel Process

Lead zirconate titanate films by rapid thermal processing

1991 ◽  
Vol 58 (11) ◽  
pp. 1161-1163 ◽  
Author(s):  
C. V. R. Vasant Kumar ◽  
M. Sayer ◽  
R. Pascual ◽  
D. T. Amm ◽  
Z. Wu ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Zirconate Titanate

A novel route to perovskite lead zirconate titanate from glycolate precursors via the sol–gel process

2008 ◽  
Vol 22 (2) ◽  
pp. 104-113 ◽  
Author(s):  
N. Tangboriboon ◽  
A. Jamieson ◽  
A. Sirivat ◽  
S. Wongkasemjit
Keyword(s):  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Sol Gel Process

scholarly journals Synthesis and characterization of nanocrystalline PZT powders: From sol to dense ceramics

2016 ◽  
Vol 10 (1) ◽  
pp. 9-16 ◽  
Author(s):  
Ali Mirzaei ◽  
Maryam Bonyani ◽  
Shahab Torkian
Keyword(s):  
Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Microstructural Characterization ◽  
Lead Zirconate ◽  
Nanocrystalline Powders ◽  
Spectroscopic Techniques ◽  
Transmission Electron ◽  
Sol Gel Process ◽  
Dta Analysis

In this study ferroelectric lead zirconate titanate PZT (0.523/0.477) nanocrystalline powders have been successfully synthesized by an alkoxide based sol-gel process. Crystallinity of the prepared ceramic powders was studied using X-ray diffractometer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies were performed to study morphology of the calcined powders. EDX analysis was employed to demonstrate purity of the synthesized powders. Surface nature of the powders was studied by using FTIR technique. TGA/DTA analysis was employed to study thermal behaviour of powders. Spectroscopic techniques (FTIR and XRD) results indicated that the as-dried amorphous powders can be completely crystallized at 600?C. In order to investigate the densification behaviour of the calcined powders, the crystalline PZT powders were pelletized into discs and sintered at various temperatures from 900?C to 1150?C, with a heating rate of 10?C/min and holding time of 2 h to find the optimum combination of temperature and time to produce high density ceramics. Microstructural characterization was conducted on the fractured surface of the samples using SEM. It was found that the PZT ceramics calcined at 600?C for 4 h then sintered at 1050?C for 2 h had maximal density (98% of the theoretically density).

scholarly journals Structural Study of the Formation of Lead Zirconate Titanate via Sol-Gel Process

Eurogel '91 ◽  
1992 ◽  
pp. 275-282 ◽  
Author(s):  
R. Ahlfänger ◽  
H. Bertagnolli ◽  
T. Ertel ◽  
B. Friedrich ◽  
A. Helmerich ◽  
...  
Keyword(s):  
Structural Study ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Sol Gel Process

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

1999 ◽  
Vol 14 (2) ◽  
pp. 494-499 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
J. D. Kennedy ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Si Substrates ◽  
Pzt Film ◽  
Gaas Substrates

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

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