Lead zirconate titanate films by rapid thermal processing

1991 ◽  
Vol 58 (11) ◽  
pp. 1161-1163 ◽  
Author(s):  
C. V. R. Vasant Kumar ◽  
M. Sayer ◽  
R. Pascual ◽  
D. T. Amm ◽  
Z. Wu ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Zirconate Titanate

Rapid Thermal Processing and Crystallization Kinetics in Lead Zirconate Titanate (PZT) Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
E.M. Griswold ◽  
L. Weaver ◽  
I.D. Calder ◽  
M. Sayer
Keyword(s):  
Crystallization Kinetics ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Depth Profiling ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Transmission Electron ◽  
Sol Gel Process

ABSTRACTRapid thermal processing (RTP) has been used to examine the crystallization kinetics of lead zirconate titanate (PZT) fabricated using a sol gel process. Depth profiling of PZT films was performed with glancing angle x-ray diffraction and transmission electron microscopy. The films were annealed using RTP ramp rates from 10°C/s to 200°C/s and hold temperatures from 525°C to 650°C. The effect of ramp rate on the phase transformation is presented, and the growth of oriented columnar structures is demonstrated. Films subjected to RTP at 650°C for 1s using a ramp of 10°C/s began to transform to perovskite and were ferroelectric while a ramp of 100°C/s (same hold) produced a linear material which was pyrochlore. Longer hold conditions such as 650°C for 30s produced ferroelectric films with Pr in excess of 20μC/cm2 and relative permittivities ε > 600.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

The Effects of Lead-Compensation and Thermal Processing on the Characteristics of DC-Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 230 ◽  
Author(s):  
Vinay Chikarmane ◽  
Chandra Sudhama ◽  
Jiyoung Kim ◽  
Jack Lee ◽  
A I Tasch
Keyword(s):  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Large Scale ◽  
Random Access ◽  
Lead Zirconate ◽  
Thermal Budget ◽  
Low Leakage ◽  
Zirconate Titanate ◽  
Low Leakage Current ◽  
Scale Integration

AbstractThe feasibility of the fabrication of thin film capacitors of Lead Zirconate Titanate (PZT) by reactive DC-Magnetron sputtering, with large switched charge and low leakage current densities for ultra-large scale integration Dynamic Random Access Memory (ULSI DRAM) applications has been demonstrated. As-deposited films were found to be predominantly pyrochlore; therefore, a subsequent phase transformation-inducing thermal processing step was key to obtaining device quality films. The importance of the thermal budget in optimizing the device characteristics of PZT films is discussed. The importance of the role of Pb compensation in lowering the required thermal budget and significantly enhancing device characteristics is shown.

Rapid thermal processing of lead zirconate titanate thin films on Pt–GaAs substrates based on a novel 1,1,1-tris(hydroxymethyl)ethane sol-gel route

1999 ◽  
Vol 14 (2) ◽  
pp. 494-499 ◽  
Author(s):  
S. Arscott ◽  
R. E. Miles ◽  
J. D. Kennedy ◽  
S. J. Milne
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Low Frequency ◽  
Lead Zirconate ◽  
Si Substrates ◽  
Pzt Film ◽  
Gaas Substrates

0.53Ti0.47)O3 have been prepared on platinized GaAs (Pt–GaAs) substrates using a new 1,1,1-tris(hydroxymethyl)ethane (THOME) based sol-gel technique. Rapid thermal processing (RTP) techniques were used to decompose the sol-gel layer to PZT in an effort to avoid problems of GayAs outdiffusion into the PZT. A crystalline PZT film was produced by firing the sol-gel coatings at 600 or 650 ° for a dwell time of 1 s using RTP. A single deposition of the precursor sol resulted in a 0.4 μm thick PZT film. X-ray diffraction measurements revealed that the films possessed a high degree of (111) preferred orientation. Measured average values of remanent polarization (Pr ) and coercive field (Ec) for the film annealed at 650 ° for 1 s were 24 μC/cm2 and 32 kV/cm, respectively, together with a low frequency dielectric constant and loss tangent at 1 kHz of 950 and 0.02. These values are comparable to those obtainable on platinized silicon (Pt–Si) substrates using conventional sol-gel methods, and are an improvement on PZT thin films prepared on platinized GaAs using an earlier sol-gel route based on 1,3-propanediol.

Convergent-bceam diffraction studies on lead zirconate titanate Ceramics

1986 ◽  
Vol 44 ◽  
pp. 482-483
Author(s):  
M.L.A. Dass ◽  
T.A. Bielicki ◽  
G. Thomas ◽  
T. Yamamoto ◽  
K. Okazaki
Keyword(s):  
Lead Zirconate Titanate ◽  
Direct Proof ◽  
Lead Zirconate ◽  
Subsolidus Phase ◽  
Pzt Ceramics ◽  
Subsolidus Phase Diagram ◽  
Zirconate Titanate ◽  
Two Phases ◽  
Cbd Method ◽  
Titanate Ceramics

Lead zirconate titanate, Pb(Zr,Ti)O3 (PZT), ceramics are ferroelectrics formed as solid solutions between ferroelectric PbTiO3 and ant iferroelectric PbZrO3. The subsolidus phase diagram is shown in figure 1. PZT transforms between the Ti-rich tetragonal (T) and the Zr-rich rhombohedral (R) phases at a composition which is nearly independent of temperature. This phenomenon is called morphotropism, and the boundary between the two phases is known as the morphotropic phase boundary (MPB). The excellent piezoelectric and dielectric properties occurring at this composition are believed to.be due to the coexistence of T and R phases, which results in easy poling (i.e. orientation of individual grain polarizations in the direction of an applied electric field). However, there is little direct proof of the coexistence of the two phases at the MPB, possibly because of the difficulty of distinguishing between them. In this investigation a CBD method was found which would successfully differentiate between the phases, and this was applied to confirm the coexistence of the two phases.

Fabrication of Bimorph Lead Zirconate Titanate Thick Films on Metal Substrates Via the Cold Sintering Process

2020 ◽  
Author(s):  
Dixiong Wang ◽  
Sinan Dursun ◽  
Lisheng Gao ◽  
Carl S. Morandi ◽  
Clive A. Randall ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Thick Films ◽  
Lead Zirconate ◽  
Sintering Process ◽  
Metal Substrates ◽  
Zirconate Titanate
Sign in / Sign up

Export Citation Format

Share Document