Liquid Delivery CVD of Ferroelectric (Pb,La)(Zr,Ti)O3 Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Tao ◽  
S.B. Desu ◽  
C.H. Peng ◽  
B. Dickerson ◽  
T.K. Li ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Reduced Pressure ◽  
La Doping ◽  
Liquid Injection ◽  
Pzt Films ◽  
Direct Liquid Injection ◽  
Titanium Ethoxide ◽  
Liquid Delivery

ABSTRACTHigh quality lanthanum doped PZT films were deposited on platinum coated silicon wafers by direct liquid injection MOCVD using lead bis-tetramethylheptadione, lanthanum tri-tetramethylheptadione, zirconium tetramethylheptadione, and titanium ethoxide as precursors. The films were deposited at 650°C and a reduced pressure of 5 Torr. The deposition rates were higher than 10 nm/min. The liquid delivery system led to highly reproducible deposition rate, composition, and ferroelectric properties in the PLZT films. The remanent polarization of the films decreased from about 25 μC/cm2 for PLZT(0/55/45) to about 12 μC/cm2 for PLZT(8/55/45). The coercive field of the films seemed to be independent on the La doping concentration up to 8% La doping.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

The Microstructure and Properties of Layered Oxide Thin Films Fabricated by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
Tingkai Li ◽  
Yongfei Zhu ◽  
Seshu B. Desu ◽  
Masaya Nagata
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
Layered Oxide ◽  
Liquid Injection ◽  
Direct Liquid Injection ◽  
Single Crystal Sapphire ◽  
First Time ◽  
Mocvd Technique

ABSTRACTFor the first time, layered oxide thin films of SrBi2Ta2O9 (SBT) with very good ferroelectric properties have been prepared by direct-liquid-injection MOCVD technique. The SBT films were deposited onto both Pt/Ti/SiO2/Si wafers and single-crystal sapphire substrates to measure their phase formation, microstructure and ferroelectric properties. Crystalline SBT phase had been observed at temperatures as low as 500°C. With increasing deposition temperature above 500°C, the grain size of SBT thin films was increased from 0.01 μ m to 0.2 μm. The films were found to be dense and homogenous. Typically, SBT thin films of 200 nm thick with grain size about 0. 1μm have 2Pr around 10 μC/cm2 at 5V, Ec 55.7 kV/cm, and dielectric constant around 100. The leakage 9 2 currents were as low as 8 × 10−9 A/cm2 at 150 kV/cm. The films also showed fatigue-free characteristics: no fatigue was observed up to 1.4 × 1010 switching cycles. This development of MOCVD technique for good quality SBT films make their integration into high density nonvolatile memories relatively easy.

EFFECT OF EUROPIUM DOPING ON ELECTRICAL PROPERTIES OF PZT FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 1-5 ◽  
Author(s):  
CHUNYU SHAO ◽  
JING WANG ◽  
WEIJIE DONG ◽  
YAN CUI ◽  
MIN JI
Keyword(s):  
Leakage Current ◽  
Lead Zirconate Titanate ◽  
Doping Concentration ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Europium Doping ◽  
Pzt Film ◽  
Pzt Films ◽  
The Eu

Samples of lead zirconate titanate Pb ( Zr 0.53 Ti 0.47) O 3 with europium ( Eu ) doping concentration of 0, 0.5, 1.5, 3 mol% (PEZT) were fabricated by sol–gel method. XRD spectra showed that the introduction of Eu into PZT favored the growth of (100) orientation. With 3% Eu content, the preferential orientation of the film converted from (111) to (100) orientation. The Eu -doped PZT films exhibited lower leakage current less than 10-9 A/cm2 and the behavior of leakage current was discussed in terms of defect chemistry theorem. When Eu content was 1.5%, the remanent polarization (P r ) increased to 28 μ C/cm2 which was much higher than that of undoped PZT film.

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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