Physical Phenomena in Ferroelectric Thin Films: Study and Modeling

1994 ◽  
Vol 361 ◽  
Author(s):  
Vladimir I. Petrovsky ◽  
Eugeniy Ph. Pevtsov ◽  
Alexsander S. Sigov

ABSTRACTAn impact of different factors on the shape of dielectric hysteresis loop in ferroelectric thin films is discussed. They include: polycrystallinity and disorientation of polarization axis, polarization nonuniformity and depolarization fields, interface contact layer and series capacity, contact potential difference and interaction of volume impurity centers with polarization field. A comparison between models and experiment show that compromise of interface layer and space charge permits to explain all main distortions of dielectric hysteresis loop in thin films at realistic parameters of the layers. The obtained results permit to explaine the distortions of real hysteresis loop and also to obtain quality parameters of samples, which are important for improving of film preparation techniques.

1997 ◽  
Vol 40 (2) ◽  
pp. 126-134 ◽  
Author(s):  
Lirong Zheng ◽  
Chenglu Lin ◽  
Huaping Xu ◽  
Shichang Zou ◽  
Okuyama Masanori

2007 ◽  
Vol 90 (4) ◽  
pp. 042902 ◽  
Author(s):  
Z. Ye ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
C. P. Cheng ◽  
...  

Materials ◽  
2018 ◽  
Vol 11 (7) ◽  
pp. 1253 ◽  
Author(s):  
Weifeng Zheng ◽  
Yue Chen ◽  
Xihong Peng ◽  
Kehua Zhong ◽  
Yingbin Lin ◽  
...  

P-type binary copper oxide semiconductor films for various O2 flow rates and total pressures (Pt) were prepared using the reactive magnetron sputtering method. Their morphologies and structures were detected by X-ray diffraction, Raman spectrometry, and SEM. A phase diagram with Cu2O, Cu4O3, CuO, and their mixture was established. Moreover, based on Kelvin Probe Force Microscopy (KPFM) and conductive AFM (C-AFM), by measuring the contact potential difference (VCPD) and the field emission property, the work function and the carrier concentration were obtained, which can be used to distinguish the different types of copper oxide states. The band gaps of the Cu2O, Cu4O3, and CuO thin films were observed to be (2.51 ± 0.02) eV, (1.65 ± 0.1) eV, and (1.42 ± 0.01) eV, respectively. The resistivities of Cu2O, Cu4O3, and CuO thin films are (3.7 ± 0.3) × 103 Ω·cm, (1.1 ± 0.3) × 103 Ω·cm, and (1.6 ± 6) × 101 Ω·cm, respectively. All the measured results above are consistent.


2001 ◽  
Vol 688 ◽  
Author(s):  
Michael Grossmann ◽  
Oliver Lohse ◽  
Dierk Bolten ◽  
Ulrich Boettger ◽  
Rainer Waser

AbstractImprint describes an aging effect in ferroelectric thin films which manifests itself by a shift of the P-V hysteresis loop on the voltage axis. In this paper a mechanism is described which attributes imprint to the screening of a large electric field within a thin surface layer by electronic charges. The field at the surface arises due to the existence of a thin surface layer in which the spontaneous ferroelectric polarization is suppressed. In the course of aging this field is gradually screened by electronic charges which are generated by a Frenkel-Poole effect and then become trapped near the electrode-thin-film interface causing the shift of the hysteresis loop. A numerical simulation based on this model allows a quantitative description of the imprint effect as a function of various experimental parameters.


2002 ◽  
Vol 81 (26) ◽  
pp. 5015-5017 ◽  
Author(s):  
G. Poullain ◽  
R. Bouregba ◽  
B. Vilquin ◽  
G. Le Rhun ◽  
H. Murray

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