Modeling of imprint in hysteresis loop of ferroelectric thin films with top and bottom interface layers

2007 ◽  
Vol 90 (4) ◽  
pp. 042902 ◽  
Author(s):  
Z. Ye ◽  
M. H. Tang ◽  
Y. C. Zhou ◽  
X. J. Zheng ◽  
C. P. Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films ◽  
Bottom Interface ◽  
Interface Layers

Leakage behavior and distortion of the hysteresis loop in ferroelectric thin films

1997 ◽  
Vol 40 (2) ◽  
pp. 126-134 ◽  
Author(s):  
Lirong Zheng ◽  
Chenglu Lin ◽  
Huaping Xu ◽  
Shichang Zou ◽  
Okuyama Masanori
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Ferroelectric Thin Films

Imprint in Ferroelectric Thin Films Caused by Screening of an Electric Field in a Thin Surface Layer

2001 ◽  
Vol 688 ◽  
Author(s):  
Michael Grossmann ◽  
Oliver Lohse ◽  
Dierk Bolten ◽  
Ulrich Boettger ◽  
Rainer Waser
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Electric Field ◽  
Hysteresis Loop ◽  
Quantitative Description ◽  
Aging Effect ◽  
Ferroelectric Thin Films ◽  
Thin Surface Layer ◽  
Simulation Based ◽  
Experimental Parameters

AbstractImprint describes an aging effect in ferroelectric thin films which manifests itself by a shift of the P-V hysteresis loop on the voltage axis. In this paper a mechanism is described which attributes imprint to the screening of a large electric field within a thin surface layer by electronic charges. The field at the surface arises due to the existence of a thin surface layer in which the spontaneous ferroelectric polarization is suppressed. In the course of aging this field is gradually screened by electronic charges which are generated by a Frenkel-Poole effect and then become trapped near the electrode-thin-film interface causing the shift of the hysteresis loop. A numerical simulation based on this model allows a quantitative description of the imprint effect as a function of various experimental parameters.

Physical Phenomena in Ferroelectric Thin Films: Study and Modeling

1994 ◽  
Vol 361 ◽  
Author(s):  
Vladimir I. Petrovsky ◽  
Eugeniy Ph. Pevtsov ◽  
Alexsander S. Sigov
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Contact Potential Difference ◽  
Contact Layer ◽  
Interface Layer ◽  
Quality Parameters ◽  
Ferroelectric Thin Films ◽  
Dielectric Hysteresis Loop ◽  
Contact Potential ◽  
Polarization Axis

ABSTRACTAn impact of different factors on the shape of dielectric hysteresis loop in ferroelectric thin films is discussed. They include: polycrystallinity and disorientation of polarization axis, polarization nonuniformity and depolarization fields, interface contact layer and series capacity, contact potential difference and interaction of volume impurity centers with polarization field. A comparison between models and experiment show that compromise of interface layer and space charge permits to explain all main distortions of dielectric hysteresis loop in thin films at realistic parameters of the layers. The obtained results permit to explaine the distortions of real hysteresis loop and also to obtain quality parameters of samples, which are important for improving of film preparation techniques.

Characteristics of Intergrown Superlattice Bismuth-Layered-Structure Ferroelectrics Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 197-198 ◽  
pp. 503-506
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Ming Fang Ren
Keyword(s):  
Thin Films ◽  
Hysteresis Loop ◽  
Layered Structure ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Memory Window ◽  
Si Substrates ◽  
Fatigue Endurance ◽  
Gel Processing

Intergrown superlattice Bi3TiNbO9–Bi4Ti3O12(BTN–BIT) and SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) ferroelectric thin films have been prepared on p-Si substrates by sol-gel processing. The precursor thin films are crystallized in the desired intergrown superlattice BTN–BIT and SBT–BIT structures annealed at 700°C. Synthesized BTN–BIT and SBT-BIT thin films exhibited good ferroelectric properties and excellence fatigue endurance. BTN–BIT thin films showed a Prvalue approximately 19.1µC/cm2and a memory window of 0.7V. Although a little smaller Prvalue and memory window were observed for the SBT–BIT thin films, the squareness of a P–E hysteresis loop was superior to that of BTN–BIT thin films. Also, the SBT–BIT thin films had more excellence fatigue endurance compared with BTN–BIT thin films.

Hysteresis loop behaviors of ferroelectric thin films: A Monte Carlo simulation study

2015 ◽  
Vol 24 (11) ◽  
pp. 117701 ◽  
Author(s):  
C. M. Bedoya-Hincapié ◽  
H. H. Ortiz-Álvarez ◽  
E. Restrepo-Parra ◽  
J. J. Olaya-Flórez ◽  
J. E. Alfonso
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Hysteresis Loop ◽  
Simulation Study ◽  
Ferroelectric Thin Films ◽  
Monte Carlo Simulation Study

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes
Sign in / Sign up

Export Citation Format

Share Document