Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

1994 ◽  
Vol 361 ◽  
Author(s):  
A. Krishnan ◽  
D.J. Keeble ◽  
R. Ramesh ◽  
W.L. Warren ◽  
B.A. Tuttle ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Positron Annihilation ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Positron Beam ◽  
S Parameter ◽  
Pt Electrodes ◽  
Post Deposition ◽  
Variable Energy

ABSTRACTPositron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.

POSITRON INTERACTION IN POLYMERS

2004 ◽  
Vol 19 (23) ◽  
pp. 3951-3959 ◽  
Author(s):  
CORINE BAS ◽  
N. DOMINIQUE ALBÉROLA ◽  
MARIE-FRANCE BARTHE ◽  
JÉRÉMIE De BAERDEMAEKER ◽  
CHARLES DAUWE
Keyword(s):  
Positron Annihilation ◽  
Chemical Structure ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Hole Size ◽  
Doppler Broadening ◽  
Positron Source ◽  
Positron Annihilation Lifetime ◽  
Doppler Broadening Spectra ◽  
Variable Energy

A series of dense copolyimide membranes was characterized using positron annihilation spectroscopy. The positron annihilation lifetime spectroscopy performed on film with a classical positron source gives informations on the positronium fraction formed and also on the hole size within the film. The Doppler broadening spectra (DBS) of the gamma annihilation rays coupled with a variable energy positron beam allow the microstructural analyses as a function of the film depth. Experimental data were also linked to the chemical structure of the polyimides. It was found that the presence of the fluorine atoms strongly affects the positron annihilitation process and especially the DBS responses.

The SiO2/Si Interface Probed With Positrons

1987 ◽  
Vol 105 ◽  
Author(s):  
Bent Nielsen ◽  
K. G. Lynn ◽  
T. C. Leung ◽  
D. O. Welch ◽  
G. Rubloff
Keyword(s):  
Heat Treatment ◽  
Elevated Temperature ◽  
Positron Annihilation ◽  
Positron Beam ◽  
The State ◽  
Open Volume ◽  
Variable Energy ◽  
Thermally Grown

AbstractThe effects of the heat treatment of Si covered with a thermally-grown ˜50 nm overlayer of SiO2 were probed by means of measurements of positron annihilation characteristics obtained with a variable-energy positron beam. From measurements at elevated temperature (˜500°C) it was observed that positrons implanted overlapping the SiO2/Si interface decay from a state with properties distinctively different from the state in Si and in SiO2. The nature of the annihilation characteristics indicates the presence of open volume defects.

Temperature Dependence of Radiation Damage in ODS Steel Studied by Triple Beam Irradiation and Positron Annihilation Techniques

2017 ◽  
Vol 373 ◽  
pp. 91-95 ◽  
Author(s):  
Da Qing Yuan ◽  
Qiao Li Zhang ◽  
Ping Fan ◽  
Xian Ping Wang ◽  
Bin Long ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Positron Annihilation ◽  
Ion Beam ◽  
Positron Beam ◽  
Doppler Broadening ◽  
Beam Irradiation ◽  
Single Beam ◽  
Positron Annihilation Lifetime ◽  
Ods Steel ◽  
S Parameter

The oxide dispersed strengthened (ODS) ferritic-martensitic steel was irradiated by 100MeV iron ion whose energy was degraded by using a Ta foil of 4 μm thick, 100 keV Hydrogen and 200 keV Helium at 480, 515, 550 and 580 °C. The irradiation fluences were 1×1016, 1.1×1015 and 6.8×1013/cm2, respectively for Fe, H and He. The techniques of positron annihilation lifetime and Doppler broadening of slow positron beam were utilized to examine the produced radiation damage. At 550 °C the maximal positron annihilation lifetime and S parameter of Doppler broadening were observed, implyin g tha t 550 °C is the pea k temperature of swelling. The S parameter and annihilation lifetime of the sample irradiated at 515 °C by the single Fe ion beam were smaller compared to the triple beam irradiation at the same temperature, implying that the triple beam irradiation caused more severe damage than the single beam irradiation.

A novel Sr $$_{3}$$ 3 Pb $$_{6}$$ 6 Ce $$_{2}$$ 2 Ti $$_{12}$$ 12 O $$_{36}$$ 36 ferroelectric thin film grown by pulsed laser ablation

2013 ◽  
Vol 116 (1) ◽  
pp. 199-206 ◽  
Author(s):  
P. S. Krishnaprasad ◽  
P. Mohanan ◽  
G. Subodh ◽  
M. T. Sebastian ◽  
M. K. Jayaraj
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
Pulsed Laser Ablation

Sol-gel processing of strontium-barium niobate ferroelectric thin film

1990 ◽  
Vol 5 (5) ◽  
pp. 916-918 ◽  
Author(s):  
Ren Xu ◽  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
John D. Mackenzie
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Crystal Silicon ◽  
Glass Slides ◽  
Gel Processing

Ferroelectric thin film of strontium-barium niobate was successfully fabricated by the sol-gel technique. The films were made on several types of substrate, including quartz, single crystal silicon wafer, and glass slides. The processing temperature was as low as 700 °C. The film obtained with thickness of 3000 Å was dense, transparent, and showed excellent ferroelectricity.

Nuclear Reaction Probe of Oxygen Vacancy Migration in Electrically Fatigued PZT Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
R.L. Pfeffer ◽  
W.D. Wilber
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Thin Film ◽  
Lead Zirconate ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Pt Electrodes ◽  
Yttrium Barium Cuprate ◽  
Yttrium Barium ◽  
Accuracy Of Measurement

ABSTRACTThe migration of oxygen vacancies and their entrapment near film-electrode interfaces has been proposed as a cause of fatigue (i.e., polarization weakening) in ferroelectric thin film capacitors. To test this idea, lead zirconate titanate (PZT) thin films were epitaxially deposited by laser ablation on LaAlO3 substrates with yttrium barium cuprate (YBCO) base electrodes. Thin film capacitors were formed by deposition of noble metal (Pt) cap electrodes; half of them were then electrically fatigued by repeated polarization reversals (108 cycles). The distributions of oxygen in the two halves were then compared by means of accelerator-based nuclear backscattering (using the narrow elastic resonance at 3.045 MeV in the scattering of 4He from 16O) throughout the bulk of the PZT films and especially right under the Pt electrodes. We were unable to detect any difference in the oxygen profiles to within the accuracy of measurement, which was about 1 % of the oxygen concentration. Compositional changes, at least involving oxygen, do not seem to be responsible for the striking electrical alterations seen in fatigued PZT.

Preparation and properties of sol–gel-derived Bi0.5Na0.5TiO3 lead-free ferroelectric thin film

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3563-3566 ◽  
Author(s):  
T. Yu ◽  
K.W. Kwok ◽  
H.L.W. Chan
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Lead Free

Preparation of BST ferroelectric thin film by pulsed laser ablation for dielectric bolometers

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 628-634 ◽  
Author(s):  
Huaping Xu ◽  
Hong Zhu ◽  
K Hashimoto ◽  
T Kiyomoto ◽  
T Mukaigawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
Pulsed Laser Ablation
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