The SiO2/Si Interface Probed With Positrons
Keyword(s):
AbstractThe effects of the heat treatment of Si covered with a thermally-grown ˜50 nm overlayer of SiO2 were probed by means of measurements of positron annihilation characteristics obtained with a variable-energy positron beam. From measurements at elevated temperature (˜500°C) it was observed that positrons implanted overlapping the SiO2/Si interface decay from a state with properties distinctively different from the state in Si and in SiO2. The nature of the annihilation characteristics indicates the presence of open volume defects.
2004 ◽
Vol 19
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pp. 3951-3959
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2012 ◽
Vol 733
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pp. 236-239
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2012 ◽
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pp. 270-273
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2019 ◽
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pp. 501
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2016 ◽
Vol 296
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pp. 65-68
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